Abstract: A substrate with a thin film, including the thin film including a Si—R1 group of a compound represented by Formula (1), and the substrate including the thin film including the Si—R1 group, the thin film being disposed on a surface of the substrate, where in Formula (1), R1 represents a monovalent organic group that bonds to Si; R2 represents a monovalent organic group that bonds to Si; R3 represents an alkoxy group, an acyloxy group, or a halogen atom that bonds to Si; n represents an integer from 0 to 2; when n is 2, R2 may be the same or different; when n is 0 or 1, R3 may be the same or different; and when n is 1, R1 and R2 may bond together to form a ring structure. Si(R1)(R2)(R3)3-n??. . .

Abstract: An example thin substrate built-in hard disk drive includes a magnetic disk in a disk shape having a through-hole at the center, a spindle motor inserted into the through-hole of the magnetic disk and co-rotatably supporting the magnetic disk, and a base plate made of an aluminum alloy and supporting the spindle motor. The base plate has a metallographic structure in which a perimeter of a second phase particle having a longest diameter of 10 ?m or more is 3 mm/mm2 or more, and the number of second phase particles having a longest diameter of 500 ?m or more is 0 particles/mm2.

Abstract: A wheel assembly includes a wheel portion and a pair of drive assemblies opposing each other with the wheel portion interposed therebetween. One of the pair of drive assemblies includes a first motor and a first deceleration assembly. The other of the pair of drive assemblies includes a second motor and a second deceleration assembly. The first deceleration assembly includes a first input shaft connected to the first output shaft. The first rotation axis and the second rotation axis are parallel to the rotation axis of the wheel portion and disposed outside the wheel portion in the radial direction of the wheel portion. The first output shaft, the first input shaft, the second output shaft, and the second input shaft extend in a direction away from the wheel portion in a direction along the rotation axis.

Abstract: A photodetection device including: first optical fibers; a second optical fiber; an optical combiner having: an end face connected to an end face of each of the first optical fibers; and another end face connected to an end face of the second optical fiber; a first photodetector that detects an intensity of light propagating through at least one of the first optical fibers; a second photodetector that detects Rayleigh scattering of light propagating through the second optical fiber; and a calculator that calculates the intensity of light propagating in a predetermined direction through the first optical fibers or the second optical fiber, from a result of detection by the first photodetector and a result of detection by the second photodetector.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Abstract: A vehicle gear-shifting control apparatus is equipped with an engine, an automatic transmission, and a controller which changes a shift stage by outputting a gear-shifting signal in accordance with the rotation speed of an input shaft to the automatic transmission. The controller executes a torque-regulating control of temporarily increasing or decreasing an input torque input to the input shaft during a shift-change, and when executing the control, determines whether or not a target increase/decrease amount of the input torque can be realized based on calculation results of a target output torque and a target gear-shifting time, executes the control to realize the target amount when it is determined that the target amount can be realized, and executes the control based on an allowable gear-shifting time set in advance to be longer than the target gear-shifting time when it is determined that the target amount cannot be realized.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

Abstract: A vehicle gear-shifting control apparatus is equipped with an engine, an automatic transmission, and a controller which changes a shift stage by outputting a gear-shifting signal in accordance with the rotation speed of an input shaft to the automatic transmission. The controller executes a torque-regulating control of temporarily increasing or decreasing an input torque input to the input shaft during a shift-change, and when executing the control, determines whether or not a target increase/decrease amount of the input torque can be realized based on calculation results of a target output torque and a target gear-shifting time, executes the control to realize the target amount when it is determined that the target amount can be realized, and executes the control based on an allowable gear-shifting time set in advance to be longer than the target gear-shifting time when it is determined that the target amount cannot be realized.

Abstract: There is formed, on a stack formed by alternately stacking an oxide film and a nitride film or an oxide film and a polysilicon film on a substrate, a hard mask in which two or more kinds of lines made of mutually different materials are arranged in order. Then, a photoresist is applied onto the hard mask. Furthermore, the photoresist is trimmed until one line is exposed from the end of the hard mask. Moreover, one line of the hard mask exposed beneath the photoresist is etched. Furthermore, a part of the stack exposed beneath the hard mask is etched. The etching of the photoresist, the hard mask, and the stack is repeated while changing etching conditions.

Abstract: Systems and methods for dryer rollers of a print system with increasing wrap angles. In one embodiment a dryer includes a turning device configured to rotate about an axis, and to guide a web of print media. The dryer also includes rollers configured to transport the web from an entrance of the dryer to the turning device. The rollers include a series of three or more rollers positioned in the dryer to consecutively increase an amount of contact area with the web as the web travels toward the turning device.

Abstract: A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.

Abstract: A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.

Abstract: A non-transitory computer readable recording medium has stored thereon instructions to be executed on a computer providing terminal device with a game. The recording medium includes, for example, a main program described with Japanese text data, and language data in which English text data is associated with identification information (hash value). The instructions cause the computer to perform the steps of: setting a language to be displayed on a display section; generating a retrieval key by performing data processing on the first data to be displayed that is included in the main program when the second language is set as a language to be displayed; and extracting the second data to be displayed that includes the identification information corresponding to the generated key, and replacing the first data to be displayed with the second data to be displayed to display the second data to be displayed on the display section.

Abstract: A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, a second insulating film provided between the second electrode and the first insulating film and on two first-direction sides of the second electrode, a third insulating film provided between the second electrode and the semiconductor pillar, and a conductive film provided inside a region interposed between the first insulating film and the second insulating film.

Abstract: A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, and a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first insulating film, a second insulating film, and a contact. The semiconductor pillars are provided on the substrate, extend in a first direction crossing an upper surface of the substrate, and are arranged along second and third directions being parallel to the upper surface and crossing each other. The first electrode films extend in the third direction. The second electrode film is provided between the semiconductor pillars and the first electrode films. The first insulating film is provided between the semiconductor pillars and the second electrode film. The second insulating film is provided between the second electrode film and the first electrode films. The contact is provided at a position on the third direction of the semiconductor pillars and is connected to the first electrode films.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Abstract: A method of high-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formation. The method includes providing a substrate having a film thereon in a process chamber, the film containing silicon oxide, silicon nitride, or both silicon oxide and silicon nitride, introducing an etching gas containing fluorine and hydrogen, and setting a gas pressure in the process chamber that is between about 1 mTorr and about 300 mTorr, and a substrate temperature that is below about ?30° C. The method further includes plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas, where the film is continuously etched during the exposing.

Abstract: A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.