Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate. For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.

Abstract: Provided are: a primer for a semiconductor substrate that is a novel surface modifier for a resist pattern having a high adhesiveness to a resist film and enabling the formation of an excellent resist pattern with a thin film thickness; a laminated substrate wherein a surface modifier and a resist pattern are successively laminated on a substrate; a pattern formation method; and a method for manufacturing a semiconductor device. The surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 um or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, is characterized by comprising at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof. R1aR2b(OX)cSiO(4-a-b-c)/2 (1) [wherein: R1 represents a —(CH2)n group; Y represents a cyclohexenyl group, etc.

Abstract: A photocurable silicon-containing coating film-forming composition including a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) (wherein R1 is a functional group relating to photocrosslinking). The photocurable silicon-containing coating film-forming composition, wherein the composition may be for forming a silicon-containing coating film that may be cured by ultraviolet irradiation and may serve as an intermediate layer between a resist film and an organic underlayer film on a substrate in a lithographic process for producing a semiconductor device.

Abstract: A resist underlayer film-forming composition for lithography can produce a semiconductor device; specifically, for forming a resist underlayer film that can be used as a hard mask. It includes a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane, nitric acid ions, and a solvent, wherein the hydrolyzable silane (a) contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) [wherein R1 is an organic group of the following Formula (2): and is bonded to a silicon atom via an Si—C bond]. The composition may further include the hydrolyzable silane (a) and/or a hydrolysate (b) thereof. The amount of the nitric acid ions may fall within a range of 1 ppm to 1,000 ppm. In the hydrolysis condensate (c), the functional group of Formula (2) in the hydrolyzable silane of Formula (1) may satisfy a (hydrogen atom)/(hydrogen atom+R5 group) ratio by mole of 1% to 100%.

Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Abstract: A composition for forming a resist underlayer film for lithography, the resist underlayer film for lithography containing silicon and being dissolved and removed with an alkaline developer in accordance with a resist pattern together with an upper layer resist during development of the upper layer resist, the composition comprising a component, which is a silane compound containing a hydrolyzable silane, a hydrolysate of the silane, a hydrolytic condensate of the silane, or any combination of these, and an element, which is an element of causing dissolution in an alkaline developer. The element, which is an element of causing dissolution in an alkaline developer, is contained in the structure of the compound as the component. The element, which is an element of causing dissolution in an alkaline developer, is a photoacid generator.

Abstract: There is provided a novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein R1 is a methyl group or an ethyl group; two R2s are each a C1-2 alkylene group; and two R3s are each a methyl group, an ethyl group, or a C2-4 alkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

Abstract: A novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein R1 is a methyl group or an ethyl group; two R2s are each a C1-2 alkylene group; and two R3s are each a methyl group, an ethyl group, or a C2-4 alkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

Abstract: A resist underlayer film-forming composition for EUV lithography showing good resist shape; including: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane includes at least one organic silicon compound selected from the group consisting of compounds of Formula (1): R1aSi(R2)4-a??Formula (1) and compounds of Formula (2): R3cSi(R4)3-c2Yb??Formula (2) a hydrolyzed product thereof, or a hydrolyzed condensate thereof.

Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

Abstract: A composition for forming a resist underlayer film that mask residues after lithography can be removed only with a chemical without etching. A composition for forming a silicon-containing resist underlayer film, that includes a polysiloxane having a unit structure including a carbonyl group-containing functional group, wherein the silicon-containing resist underlayer film is used as a mask layer in a step of removing the mask layer with a hydrogen peroxide-containing chemical after transfer of a pattern to an underlayer by a lithography process. The composition for forming a silicon-containing resist underlayer film, wherein the unit structure including a carbonyl group-containing functional group may include a cyclic acid anhydride group, a cyclic diester group, or a diester group. The polysiloxane may further have a unit structure including an amide group-containing organic group. The amide group may be a sulfonamide group or a diallyl isocyanurate group.

Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

Abstract: A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a??Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

Abstract: There is provided a silicon-containing resist underlayer film that is usable as a hard mask in a lithography process and can be removed by a wet process using a chemical solution, and particularly, a mixed aqueous solution of sulfuric acid with hydrogen peroxide (SPM). A resist underlayer film-forming composition is represented by comprising a hydrolysis-condensation of a hydrolysable silane having an epoxy group in an amount of 10 to 90% by mole relative to the total amount of hydrolysable silanes by an aqueous solution of an alkaline substance, and in a reaction system containing the hydrolysis-condensate, a hydrolysis-condensate containing an organic group having a dihydroxy group obtained by ring-opening the epoxy group by an inorganic acid or a cation exchange resin is further comprised.