Patents by Inventor Wayne Byran Grabowski

Wayne Byran Grabowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical transistor device structure with cylindrically-shaped regions
    Patent number: 9543396
    Abstract: A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The cylindrically-shaped dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Adjacent ones of the cylindrically-shaped dielectric regions being laterally separated along a common diametrical axis by a narrow region of the semiconductor layer having a first width. Each dielectric region has a cylindrically-shaped, conductive field plate member centrally disposed therein. The cylindrically-shaped, conductive field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrically-shaped, conductive field plate member from the narrow region.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: January 10, 2017
    Assignee: Power Integrations, Inc.
    Inventors: Sorin Stefan Georgescu, Wayne Byran Grabowski, Kamal Raj Varadarajan, Lin Zhu, Kuo-Chang Robert Yang
  • Vertical Transistor Device Structure with Cylindrically-Shaped Regions
    Publication number: 20150171174
    Abstract: A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The cylindrically-shaped dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Adjacent ones of the cylindrically-shaped dielectric regions being laterally separated along a common diametrical axis by a narrow region of the semiconductor layer having a first width. Each dielectric region has a cylindrically-shaped, conductive field plate member centrally disposed therein. The cylindrically-shaped, conductive field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrically-shaped, conductive field plate member from the narrow region.
    Type: Application
    Filed: October 22, 2014
    Publication date: June 18, 2015
    Inventors: Sorin Stefan Georgescu, Wayne Byran Grabowski, Kamal Raj Varadarajan, Lin Zhu, Kuo-Chang Robert Yang