Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.

Abstract: Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

Abstract: A method to determine a performance characteristic of an exhaust system of an engine, where the exhaust system includes an exhaust gas sensor that outputs an exhaust gas signal. A combustion event in a cylinder is fueled at an air-fuel ratio selected to produce exhaust gas that is expected to be distinguishable by the exhaust gas sensor from exhaust gas produced by other combustion events, and used to determine the performance characteristic. The performance characteristic may be an exhaust gas transport time of the exhaust system, a sensitivity characteristic of the exhaust gas sensor, or a fueling correction value necessary to restore fueling to, for example, stoichiometry. Such a method is useful to detect physical changes in the exhaust system such as relocating the exhaust gas sensor, or detect if the exhaust gas sensor is damaged or not operating properly.

Abstract: An apparatus and method for delivering fluids to a semiconductor chamber for combinatorial processing is provided. In some embodiments the apparatus is comprised of a showerhead assembly having a plurality of processing sectors separated by a purge member. The processing sectors are configured to receive one or more processing fluids for combinatorial processing on a substrate. The processing sectors are isolated by a purge fluid conveyed through the purge member. The purge member is configured to selectively control the profile of the purge fluid to enhance isolation of the processing fluids within each sector. The profile of the purge fluid is manipulated by selectively controlling the shape and/or density of the purge curtain, independently between each processing sector.

Abstract: This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of an electrical property as a function of cathode voltage used during a sputtering process. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials, be fabricated to have minimal leakage or “off” current characteristics (Ileak or Ioff, respectively) or a maximum ratio of “on” current to “off” current (Ion/Ioff).

Abstract: This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with metal oxide deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of a desired electrical property as a function of cathode voltage used during a sputtering process that uses a biased target. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials (e.g.

Abstract: This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with metal oxide deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of a desired electrical property as a function of cathode voltage used during a sputtering process that uses a biased target. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials (e.g.

Abstract: A sander can include housing, and a motor assembly in the housing. The motor assembly can include an output member. A platen can be driven by the output member. A user feedback assembly can be coupled to the housing and have a sensor assembly, a controller and an indicator. The sensor assembly can be configured to sense a parameter that is related to a magnitude of a force transmitted between the platen and a workpiece and generate a signal in response thereto. The controller can receive the sensor signal from the sensor assembly and control operation of the indicator in response thereto.

Abstract: A sander can include housing, and a motor assembly in the housing. The motor assembly can include an output member. A platen can be driven by the output member. A user feedback assembly can be coupled to the housing and have a sensor assembly, a controller and an indicator. The sensor assembly can be configured to sense a parameter that is related to a magnitude of a force transmitted between the platen and a workpiece and generate a signal in response thereto. The controller can receive the sensor signal from the sensor assembly and control operation of the indicator in response thereto.