Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. A process condition measuring device surveys conditions in a target environment and records them in a memory for later transmission or downloading.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition measuring device to a user with little or no human intervention.

Abstract: A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.

Abstract: A highly dynamic heating and/or chilling chamber for processing semiconductor wafers. The chamber has uniform heat and gas flow distribution in order to minimize the temperature gradient at different points of the wafer.

Abstract: Systems and methods are described for integrated (embedded) semiconductor wafer temperature measurement equipment and processes. An integrated wafer temperature measurement apparatus, comprising: a substrate; a placement resource formed in said substrate; a sensor lead located in said placement resource, said sensor lead having a first end and a second end; a sensor coupled to said first end of said sensor lead and located in said placement resource; and a sensor lead cover coupled to said substrate. The systems and methods provide advantages in that reliability is enhanced, installation and removal are facilitated, and accuracy is improved by obviating any shadowing of the substrate and reducing temperature gradients near the sensor.

Abstract: An apparatus for measuring the temperature of an object within a process chamber is described. The process chamber includes a platform for receiving the object and an energy source for transferring energy to the object. The apparatus includes a shield, and a first and second energy sensor. The shield is positioned in the chamber adjacent the object to create an isothermal cavity in the space between the object and the shield. The shield is designed to receive from the energy source an amount of energy approximating that received by the object. The first energy sensor is positioned between the shield and the platform to measure the temperature of the object. The second energy sensor measures the temperature of the shield.A method for establishing an isothermal condition within the process chamber includes the steps of varying the shield temperature in inverse relationship to the difference between the shield temperature and a target temperature.