Abstract: An electronic module includes multiple stacked bare IC chips ("a stack") and a sensor assembly that is mechanically coupled to an end surface of the stack. Electrical connection between the sensor assembly and the stack is provided by a metallization layer disposed on a side-surface of the stack. Specifically, wiring of the sensor assembly extends to an edge surface thereof corresponding to the side-surface of the stack where it electrically connects to the side-surface wiring. The IC chips of the stack are similarly electrically connected to the side-surface wiring. Multiple sensors (e.g., CCD arrays) may be electrically and mechanically coupled to multiple surfaces of the stack for providing a, e.g., multi-view imaging module. Multiple electrical and mechanical options exist for the connection of sensors to stacks within electronic modules.

Abstract: An electronic module includes multiple stacked bare IC chips ("a stack") and a sensor assembly that is mechanically coupled to an end surface of the stack. Electrical connection between the sensor assembly and the stack is provided by a metallization layer disposed on a side-surface of the stack. Specifically, wiring of the sensor assembly extends to an edge surface thereof corresponding to the side-surface of the stack where it electrically connects to the side-surface wiring. The IC chips of the stack are similarly electrically connected to the side-surface wiring. Multiple sensors (e.g., CCD arrays) may be electrically and mechanically coupled to multiple surfaces of the stack for providing a, e.g., multi-view imaging module. Multiple electrical and mechanical options exist for the connection of sensors to stacks within electronic modules.

Abstract: A technique is provided for correcting miswiring on a chip for test purposes. When an IC chip has been formed during a prototype operation, often I/O wiring is found to be deficient. This deficiency can be corrected by providing an interposer which has pads on one surface corresponding to the pads on the IC chip and pads on the opposite surface of the interposer corresponding to the desired output connections. Vias are formed through the interposer and the miswired connections on the chip surface are wired through the vias to the proper connections for the output of the chip as well as the proper connections on the chip being wired to the proper connections for the output connection on the opposite surface of the interposer.

Abstract: An integrated high-performance decoupling capacitor, formed on a semiconductor chip, using the substrate of the chip itself in conjunction with a metallic deposit formed on the presently unused chip back surface and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor in close proximity to the active circuit on the chip requiring such decoupling capacitance.Specifically the present invention achieves this desirable result by providing a dielectric layer on the unused backside of the chip and forming a metal deposit on the formed backside dielectric layer and an electrical connection, between the metallic deposit and the active chip circuit via a through hole in the chip.

Abstract: A fabrication method including a semiconductor chip kerf clear process and a resulting semiconductor chip and electronic module formed thereby. The fabrication method includes providing a wafer comprising a plurality of integrated circuit chips having kerf regions between them. Chip metallization is present within the kerf regions. A photolithography process is used to protect the wafer exposing only the kerf regions. Next, the wafer is etched, clearing the chip metallization from the kerf regions. The wafer is then diced and the chips are stacked to form a monolithic electronic module. A side surface of the electronic module is processed to expose transfer metals extending thereto, thereby facilitating electrical connection to the chips within the electronic module. Specific details of the fabrication method, resulting integrated circuit chips and monolithic electronic module are set forth.

Abstract: Electronic semiconductor structures, and fabrication and sparing methods, each utilize an electrically programmable spare circuit incorporated with a multichip package. The programmable sparing capability in the multichip package is accomplished either with or without the inclusion of a spare chip(s). With a spare memory circuit, individual failed memory cells in the semiconductor chips of a stack can be functionally replaced by memory cells of the spare memory circuit subsequent to encapsulation and burn-in testing. With use of a spare chip, non-volatile sparing can occur subsequent to encapsulation and burn-in testing without physical rewiring of a wire bond connection. Specific details of alternate electronic semiconductor structures, and fabrication and sparing methods therefore, are set forth.

Abstract: A fabrication method and resultant monolithic electronic module having a separately formed thin-film layer attached to a side surface. The fabrication method includes providing an electronic module composed of stacked integrated circuit chips. A thin-film layer is separately formed on a temporary support which is used to attach the thin-film layer to the electronic module. The disclosed techniques may also be used for attaching an interposer, which may include active circuity, to an electronic module. Specific details of the fabrication method, resulting multichip packages, and various thin-film structures are set forth.

Abstract: A technique is disclosed for forming a chip cube from a plurality of chips laminated together in front-to-back relationship, the edges of the chip forming a cube face having a set of connectors for each chip thereon. A number "X" of functional chips is required for the operation, and "X+Y" is the number of chips provided in the stack such that there is Y number of chips greater than the number of functional chips required. If any number of chips equal to Y or less are found to be defective, there are enough chips remaining to perform the required function. Thereafter X number of good chips are connected to output circuitry through an interposer. Electrical connectors are provided on all of the IC chips. Contact pads for all of the connectors are provided on one face, and outlet pads are provided on the opposite face of the interposer for at least Y number of outlets. The interposer has vias at least equal to the number of outlet pads.

Abstract: An electronic module includes multiple stacked bare IC chips ("a stack") and a sensor assembly that is mechanically coupled to an end surface of the stack. Electrical connection between the sensor assembly and the stack is provided by a metallization layer disposed on a side-surface of the stack. Specifically, wiring of the sensor assembly extends to an edge surface thereof corresponding to the side-surface of the stack where it electrically connects to the side-surface wiring. The IC chips of the stack are similarly electrically connected to the side-surface wiring. Multiple sensors (e.g., CCD arrays) may be electrically and mechanically coupled to multiple surfaces of the stack for providing a, e.g., multi-view imaging module. Multiple electrical and mechanical options exist for the connection of sensors to stacks within electronic modules.

Abstract: A fabrication method and resultant monolithic electronic module having a separately formed thin-film layer attached to a side surface. The fabrication method includes providing an electronic module composed of stacked integrated circuit chips. A thin-film layer is separately formed on a temporary support which is used to attach the thin-film layer to the electronic module. The disclosed techniques may also be used for attaching an interposer, which may include active circuity, to an electronic module. Specific details of the fabrication method, resulting multichip packages, and various thin-film structures are set forth.

Abstract: An integrated multichip memory module structure and method of fabrication wherein stacked semiconductor memory chips are integrated by a controlling logic chip such that a more powerful memory architecture is defined with the appearance of a single, higher level memory chip. A memory subunit is formed having N memory chips with each memory chip of the subunit having M memory devices. The controlling logic chip coordinates external communication with the N memory chips such that a single memory chip architecture with N.times.M memory devices appears at the module's I/O pins. A preformed electrical interface layer is employed at one end of the memory subunit to electrically interconnect the controlling logic chip with the memory chips comprising the subunit. The controlling logic chip has smaller dimensions than the dimensions of the memory chips comprising the subunit.

Abstract: Integrated Circuit ("IC") chips are formed with precisely defined edges and sizing. At the wafer processing level, trenches are lithographically etched in the kerf regions to define the edges of the IC chips on the wafer. The trenches are filled with insulating material, and upper level wiring and metallization is completed for the IC chips on the wafer. Further trenches are defined down to the filled previously formed trenches. The wafer is thinned from its bottom up to the filled trenches, and the insulating material therein is removed to separate the individual IC chips from the wafer. The precision of IC chip edge definition facilitates forming the IC chips into stacks more easily because many stack level alignment processes become unnecessary.

Abstract: Methods and apparatus are set forth for burn-in stressing and simultaneous testing of a plurality of semiconductor device chips laminated together in a stack configuration to define a multichip module. Testing is facilitated by connecting temporary interconnect wiring to an access surface of the multichip module. This temporary interconnect wiring electrically interconnects at least some semiconductor device chips within the module. Prior to burn-in stressing and testing, a separate electrical screening step occurs to identify any electrical defect in the connection between the temporary interconnect wiring and the multichip module. If an electrical defect is identified, various techniques for removing or isolating the defect are presented. Thereafter, burn-in stressing and simultaneous testing of the semiconductor chips within the multichip module occurs using the temporary interconnect wiring.

Abstract: A fabrication method including a semiconductor chip kerf clear process and a resulting semiconductor chip and electronic module formed thereby. The fabrication method includes providing a wafer comprising a plurality of integrated circuit chips having kerf regions between them. Chip metallization is present within the kerf regions. A photolithography process is used to protect the wafer exposing only the kerf regions. Next, the wafer is etched, clearing the chip metallization from the kerf regions. The wafer is then diced and the chips are stacked to form a monolithic electronic module. A side surface of the electronic module is processed to expose transfer metals extending thereto, thereby facilitating electrical connection to the chips within the electronic module. Specific details of the fabrication method, resulting integrated circuit chips and monolithic electronic module are set forth.

Abstract: An endcap chip is provided for a multichip stack comprising multiple integrated circuit chips laminated together. The endcap chip has a substrate with an upper surface and a edge surface, which extends in a plane orthogonal to the upper surface. At least one conductive, monolithic L-connect is disposed over the substrate such that a first leg extends at least partially over the upper surface of the substrate and a second leg extends at least partially over the edge surface of the substrate. When the endcap chip is located at the end of the multichip stack, the at least one conductive, monolithic L-connect electrically connects metal on an end face of the stack to metal on a side face of the stack. A fabrication process is set forth for producing the endcap chip with lithographically defined dimensions.

Abstract: A fabrication method including a semiconductor chip kerf clear process and a resulting semiconductor chip and electronic module formed thereby. The fabrication method includes providing a wafer comprising a plurality of integrated circuit chips having kerf regions between them. Chip metallization is present within the kerf regions. A photolithography process is used to protect the wafer exposing only the kerf regions. Next, the wafer is etched, clearing the chip metallization from the kerf regions. The wafer is then diced and the chips are stacked to form a monolithic electronic module. A side surface of the electronic module is processed to expose transfer metals extending thereto, thereby facilitating electrical connection to the chips within the electronic module. Specific details of the fabrication method, resulting integrated circuit chips and monolithic electronic module are set forth.