Patents by Inventor Wayne M. Parent

Wayne M. Parent has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7524383
    Abstract: A method and system for passivating a processing chamber is provided, whereby the processing chamber is exposed to one or more cycles of citric acid, or nitric acid. The processing chamber is fabricated, for example, from stainless steel. Each cycle may be performed at a pressure greater than atmospheric pressure, or a temperature greater than 20 degrees centigrade, or both.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: April 28, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Wayne M. Parent, Dan R. Geshell
  • Patent number: 7491036
    Abstract: A processing system utilizing a supercritical fluid for treating a substrate is described as having a pump for recirculating the supercritical fluid over the substrate. For various applications in supercritical fluid processing, the fluid temperature for the treatment process can elevate above the temperature acceptable for safe operation of the pump. Therefore, in accordance with one embodiment, a fraction of supercritical fluid from the primary recirculating flow of supercritical fluid over the substrate is circulated from the pressure side of the pump, through a heat exchanger to lower the temperature of the supercritical fluid, through the pump, and it is returned to the primary flow on the suction side of the pump. In accordance with yet another embodiment, supercritical fluid is circulated through the pump from an independent source to vent.
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: February 17, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Wayne M. Parent, Gentaro Goshi
  • Patent number: 7435447
    Abstract: In a high pressure processing system configured to treat a substrate, a flow measurement device is utilized to determine a flow condition in the high pressure processing system. The flow measurement device can, for example, comprise a turbidity meter. The flow parameter can, for example, include a volume flow rate or a time to achieve mixing of a process chemistry within a high pressure fluid used to treat the substrate.
    Type: Grant
    Filed: February 15, 2005
    Date of Patent: October 14, 2008
    Assignee: Tokyo Electron Limited
    Inventor: Wayne M. Parent