Abstract: A memory device including an array of memory cells and a method for copying information within the memory device. Each memory cell includes a first memory sub-cell and a second memory sub-cell. Each memory cell also includes a device that copies information from the first memory sub-cell into the second memory sub-cell. Each memory cell may include a static random access memory (SRAM) cell and may utilize tri-state inverters to make overwriting information easier and reduce power consumption. Each memory cell may also include a second copy device that allows information to be copied from the second memory sub-cell to the first memory sub-cell. The memory device may be provided in a register file of a microprocessor to copy information from an architectural branch register (ABR) file to a speculative branch register (SBR) file.