Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, used to remove the silicon melt body; a horizontal magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body for containing a silicon melt; a heater having a graphite cylinder arranged around the crucible for heating the silicon melt; a pulling device arranged on the top of the furnace body for pulling out the silicon crystal ingot from the silicon melt; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein a plurality of grooves are provided on the side wall of the graphite cylinder along the axis direction of the graphite cylinder, and a depth of the grooves in the direction of the magnetic field is smaller than a depth of the grooves perpendicular to the direction of the magnetic field.

Abstract: The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a deflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the deflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the silicon crystal is pulled by the pulling device during the ingot passing through the deflector, the distance between the bottom of the deflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field.

Abstract: The present application provides a draft tube of crystal growing furnace and the crystal growing furnace. The draft tube comprises an inner tube, an outer tube and a thermal insulating material sandwiched between the inner tube and the outer tube, wherein the inner tube has a thermal resistance lower than that of the outer tube. Accordingly, the outer tube having the higher thermal resistance reduces the heat transfer from the outer tube to the inner tube, thereby the temperature of the inner tube can be reduced, the heat radiation from the ingot surface to the inner tube can be enhanced, and the vertical temperature gradient of the ingot can be increased. At the same time, the temperature of the outer tube increases to reduce the condensation of silica vapor (SiOx) evaporated from the silicon melt surface, thereby impurity formation and dislocation defect caused by the SiOx fallen into the silicon melt can be prevented.

Abstract: The present application provides a reflective screen of a monocrystal growth furnace and the monocrystal growth furnace. The reflective screen comprises an inner cylinder, an outer cylinder, a thermal insulating material sandwiched between the inner and the outer cylinders, and a thermal insulating pad disposed at the joint of the inner and the outer cylinders. The reflective screen and the monocrystal growth furnace are able to decrease the thermal transmittance from the outer cylinder to the inner cylinder, increase the vertical temperature gradient of the ingot, and prevent or decrease the silicon oxides evaporated from the molten silicon to condensate on the outer cylinder of the reflective screen. Thereby, polycrystalline caused by the oxides falling into the molten silicon can be reduced. Moreover, the thermal power required during the growth of monocrystalline silicon can be reduced because of the reduction of unnecessary thermal transmittance.