Patents by Inventor Wei-Chen Liao

Wei-Chen Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12000455
    Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi Chen Ho, Chih Ping Liao, Chien Ting Lin, Jie-Ying Yang, Wei-Ming Wang, Ker-Hsun Liao, Chi-Hsun Lin
  • Publication number: 20230407477
    Abstract: A substrate processing apparatus unit is disclosed.
    Type: Application
    Filed: June 14, 2023
    Publication date: December 21, 2023
    Inventor: Wei Chen Liao
  • Publication number: 20230386805
    Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 30, 2023
    Inventors: Ming Che CHEN, Wei-Chen LIAO
  • Publication number: 20230366082
    Abstract: A film forming apparatus includes a chamber, a susceptor placed in the chamber, an electrode placed inside the susceptor, a conductive shower head arranged above the susceptor apart from each other, an annular exhaust duct arranged so as to surround the outer edge of the susceptor, and an AC power supply that supplies AC power to the electrode, wherein the annular exhaust duct has an exhaust gas introduction member having an exhaust gas inlet and an exhaust gas discharge member having an exhaust gas outlet, the exhaust gas introduction member is arranged on the susceptor side in the radial direction of the susceptor and is made of an insulating material, and the exhaust gas discharge member is arranged on the side opposite to the susceptor side in the radial direction of the susceptor, and is made of a conductive material.
    Type: Application
    Filed: May 10, 2023
    Publication date: November 16, 2023
    Inventors: Jun Yoshikawa, Wei Chen Liao
  • Publication number: 20230069637
    Abstract: A gas distribution assembly and method for reducing the eccentricity between a shower plate and an exhaust duct are disclosed. The gas distribution assembly includes positioning devices configured to reduce misalignment between the shower plate and the exhaust duct. The gas distribution assembly and method can be used to improve uniformity of film deposition thickness.
    Type: Application
    Filed: August 29, 2022
    Publication date: March 2, 2023
    Inventors: Wei Chen Liao, Vincent Hubert Bernard Gilles Babin
  • Patent number: 11587802
    Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: February 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Che Chen, Wen-Tane Liao, Ming-Hsien Lin, Wei-Chen Liao, Hai-Lin Lee, Chun-Yu Chen
  • Publication number: 20230041439
    Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 9, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Kuo-Lung Hou, Wei-Chen Liao, Ming-Hsien Lin
  • Publication number: 20220415630
    Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.
    Type: Application
    Filed: June 25, 2021
    Publication date: December 29, 2022
    Inventors: Ming Che CHEN, Wei-Chen LIAO
  • Publication number: 20220041124
    Abstract: A mobile platform including a vehicle body, an elastic anti-collision strip and two trigger mechanisms is provided. The vehicle body has two side surfaces and a front side surface connected between the two side surfaces. A safety network is provided in the vehicle body. The elastic anti-collision strip includes an impact receiving section and two fixing sections respectively connected to the impact receiving section. The impact receiving section is arc-shaped and located on the front side surface. The two fixing sections are respectively fixed to the two side surfaces. The two trigger mechanisms are respectively fixed to the two side surfaces and connected to the two fixing sections. The trigger mechanisms are used to trigger the safety network according to a deformation condition of the impact receiving section. The two fixing sections are used to control the deformation condition. A driving method of the mobile platform is also provided.
    Type: Application
    Filed: August 2, 2021
    Publication date: February 10, 2022
    Inventors: WEI-CHEN LIAO, EN-HUAI HSU
  • Publication number: 20210134616
    Abstract: A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.
    Type: Application
    Filed: January 22, 2020
    Publication date: May 6, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Che CHEN, Wen-Tane LIAO, Ming-Hsien LIN, Wei-Chen LIAO, Hai-Lin LEE, Chun-Yu CHEN
  • Publication number: 20200381287
    Abstract: An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 3, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Patent number: 10775289
    Abstract: A gas detecting device includes a casing, an optical mechanism, a gas transporting actuator, a laser module, a particle detector and an external sensing module. The casing includes a chamber, an inlet, an outlet and a communication channel. The optical mechanism is disposed in the chamber. The optical mechanism includes an airflow channel and a light-beam channel. The airflow channel is in fluid communication with the at least one inlet and the outlet. The light-beam channel is in communication with the airflow channel. The gas transporting actuator is disposed on the optical mechanism. The laser module is disposed in the optical mechanism for emitting a light beam to the airflow channel. The particle detector detects sizes and a concentration of the suspended particles in the air. The external sensing module is installed in the communication channel to measure the air.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: September 15, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Hung-Chun Hu, Young-Chih Kuo, Jui-Yuan Chu, Chien-Chih Huang, Wen-Hsiung Liu, Yi-Cheng Huang, Wei-Chen Liao, Chi-Chiang Hsieh, Chi-Feng Huang, Yung-Lung Han
  • Patent number: 10748806
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Publication number: 20190234851
    Abstract: A gas detecting device includes a casing, an optical mechanism, a gas transporting actuator, a laser module, a particle detector and an external sensing module. The casing includes a chamber, an inlet, an outlet and a communication channel. The optical mechanism is disposed in the chamber. The optical mechanism includes an airflow channel and a light-beam channel. The airflow channel is in fluid communication with the at least one inlet and the outlet. The light-beam channel is in communication with the airflow channel. The gas transporting actuator is disposed on the optical mechanism. The laser module is disposed in the optical mechanism for emitting a light beam to the airflow channel. The particle detector detects sizes and a concentration of the suspended particles in the air. The external sensing module is installed in the communication channel to measure the air.
    Type: Application
    Filed: December 18, 2018
    Publication date: August 1, 2019
    Applicant: Microjet Technology Co., Ltd.
    Inventors: Hao-Jan MOU, Hung-Chun HU, Young-Chih KUO, Jui-Yuan CHU, Chien-Chih HUANG, Wen-Hsiung LIU, Yi-Cheng HUANG, Wei-Chen LIAO, Chi-Chiang HSIEH, Chi-Feng HUANG, Yung-Lung HAN
  • Publication number: 20190139810
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: December 21, 2018
    Publication date: May 9, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Wei-Jen CHEN, Yi-Chen CHIANG, Tsang-Yang LIU, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Patent number: 10163676
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Patent number: 9803274
    Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: October 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Wei Bih, Wei-Jen Chen, Yen-Yu Chen, Hsien-Chieh Hsiao, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Publication number: 20150129414
    Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.
    Type: Application
    Filed: November 14, 2013
    Publication date: May 14, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Wei BIH, Wei-Jen CHEN, Yen-Yu CHEN, Hsien-Chieh HSIAO, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Publication number: 20150000599
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 1, 2015
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang