Abstract: Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.

Abstract: The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices incorporating reference cells for achieving high sensing yield. The present disclosure provides a memory device including a main cell structure including a switching element arranged between a pair of conductors, and a reference cell structure electrically coupled to the main cell structure. The reference cell structure includes a switching element arranged between a pair of conductors, in which the switching element of the reference cell structure has a dimension that is different from a dimension of the switching element of the main cell structure.

Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.

Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.