Abstract: A decoration panel includes a first substrate, a first transparent conductive element, a transparent structure, a second substrate, a second transparent conductive element, and a first cholesteric liquid crystal layer. The first transparent conductive element is disposed on the first substrate. The transparent structure is disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The second transparent conductive element is disposed on the second substrate. The first cholesteric liquid crystal layer is disposed between the first transparent conductive element and the second transparent conductive element. A display apparatus is adapted to render a decoration pattern, and the decoration pattern corresponds to the transparent structure. Moreover, a display apparatus including the decoration panel is also provided.

Abstract: A method and device of removing and recycling metals from a mixing acid solution, includes adsorbing a mixing acid solution with a pH value of ?1 to 4 and a cobalt ion concentration of 100 to 1,000 mg/L by at least two cation resins in series setting to the cobalt ion concentration in the mixing acid solution is less than 10 mg/L, and then adjusting the pH value of the mixing acid solution after adsorption to meet a discharge standard, wherein the particle size of the at least two cation resins in series setting is 150˜1,200 ?m. After the cation resins are saturated by adsorption, regenerating the cation resins by sulfuric acid to form a cobalt sulfate solution, and then electrolytically treating the cobalt sulfate solution to obtain electrolytic cobalt and sulfuric acid electrolyte. The operation process is simple without complicated equipment, and it can effectively recycle metals from mixing acid solutions.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: An integrated circuit structure includes a semiconductor substrate, a passivation layer, a first protective layer, and a second protective layer. The passivation layer is over the semiconductor substrate. The first protective layer is over the passivation layer. The second protective layer is over the first protective layer, wherein a boundary of the first protective layer is confined within the second protective layer.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.