Patents by Inventor Wei-Hsiang YANG

Wei-Hsiang YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ONON sidewall structure for memory device and method for making the same
    Patent number: 12009033
    Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.
    Type: Grant
    Filed: June 20, 2023
    Date of Patent: June 11, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chen-Ming Huang, Wen-Tuo Huang, Yu-Hsiang Yang, Yu-Ling Hsu, Wei-Lin Chang, Chia-Sheng Lin, ShihKuang Yang, Yu-Chun Chang, Hung-Ling Shih, Po-Wei Liu, Shih-Hsien Chen
  • Method for manufacturing diamond-like carbon film
    Patent number: 10508342
    Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: December 17, 2019
    Assignee: CREATING NANO TECHNOLOGIES, INC.
    Inventors: Shih-Ming Huang, Jie Huang, Wei-Hsiang Yang
  • METHOD FOR MANUFACTURING DIAMOND-LIKE CARBON FILM
    Publication number: 20180057941
    Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.
    Type: Application
    Filed: August 29, 2016
    Publication date: March 1, 2018
    Inventors: Shih-Ming HUANG, Jie HUANG, Wei-Hsiang YANG