Patents by Inventor Wei-Hung Chiang
Wei-Hung Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240173819Abstract: A wafer grinding parameter optimization method and an electronic device are provided. The method includes the following. A natural frequency of a grinding wheel spindle of wafer processing equipment is obtained, and a grinding stability lobe diagram is generated accordingly. A grinding speed is selected based on a speed range of the grinding wheel spindle. Multiple grinding parameter combinations are determined based on the grinding speed. Multiple grinding simulation result combinations corresponding to the grinding parameter combinations are generated. A specific grinding parameter combination is selected based on each of the grinding simulation result combinations, and the wafer processing equipment is set accordingly.Type: ApplicationFiled: September 12, 2023Publication date: May 30, 2024Applicant: GlobalWafers Co., Ltd.Inventors: Chih-Chun Cheng, Wen-Nan Cheng, Meng-Bi Lin, Chi-Feng Li, Tzu-Fan Chiang, Wei-Jen Chen, Chien Hung Chen, Hsiu Chi Liang, Ying-Ru Shih
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Publication number: 20240178120Abstract: An integrated fan-out package includes a first redistribution structure, a die, conductive structures, an encapsulant, and a second redistribution structure. The first redistribution structure has first regions and a second region surrounding the first regions. A metal density in the first regions is smaller than a metal density in the second region. The die is disposed over the first redistribution structure. The conductive structures are disposed on the first redistribution structure to surround the die. Vertical projections of the conductive structures onto the first redistribution structure fall within the first regions of the first redistribution structure. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant, the die, and the conductive structures.Type: ApplicationFiled: February 8, 2023Publication date: May 30, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Ming Weng, Tzu-Sung Huang, Wei-Kang Hsieh, Hao-Yi Tsai, Ming-Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Chu-Chun Chueh
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Publication number: 20240167204Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.Type: ApplicationFiled: January 30, 2024Publication date: May 23, 2024Inventors: Ying-Chi LIN, Wei-Hung CHEN, Li-Chen CHU, Rih-Sheng CHIANG
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Publication number: 20240158968Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.Type: ApplicationFiled: January 25, 2024Publication date: May 16, 2024Inventors: Ying-Chi LIN, Wei-Hung CHEN, Li-Chen CHU, Rih-Sheng CHIANG
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Publication number: 20240145327Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.Type: ApplicationFiled: December 27, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chang-Jung Hsueh, Cheng-Nan Lin, Wan-Yu Chiang, Wei-Hung Lin, Ching-Wen Hsiao, Ming-Da Cheng
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Publication number: 20240128219Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.Type: ApplicationFiled: December 6, 2023Publication date: April 18, 2024Inventors: Hui-Min Huang, Wei-Hung Lin, Kai Jun Zhan, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng
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Patent number: 11952690Abstract: A breathable and waterproof non-woven fabric is manufactured by a manufacturing method including the following steps. Performing a kneading process on 87 to 91 parts by weight of a polyester, 5 to 7 parts by weight of a water repellent, and 3 to 6 parts by weight of a flow promoter to form a mixture, in which the polyester has a melt index between 350 g/10 min and 1310 g/10 min at a temperature of 270° C., and the mixture has a melt index between 530 g/10 min and 1540 g/10 min at a temperature of 270° C. Performing a melt-blowing process on the mixture, such that the flow promoter is volatilized and a melt-blown fiber is formed, in which the melt-blown fiber has a fiber body and the water repellent disposed on the fiber body with a particle size (D90) between 350 nm and 450 nm.Type: GrantFiled: December 1, 2021Date of Patent: April 9, 2024Assignee: TAIWAN TEXTILE RESEARCH INSTITUTEInventors: Ying-Chi Lin, Wei-Hung Chen, Li-Chen Chu, Rih-Sheng Chiang
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Publication number: 20240088119Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Hung Lin, Hui-Min Huang, Chang-Jung Hsueh, Wan-Yu Chiang, Ming-Da Cheng, Mirng-Ji Lii
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Publication number: 20240066494Abstract: The present invention provides a microplasma device and system thereof. The microplasma device comprises a reaction tank carrying with a reaction solution. A nanomaterial and its precursors are contained in the reaction solution. A first electrode is at least partially immersed in the reaction solution. A second electrode comprises a microplasma array component to eject microplasma array to the surface of the reaction solution. A power source is electrically connected between the first electrode and the second electrode. The present invention provides a novel microplasma array device to produce nanomaterial with increased yield rate. The microplasma array device can be multiplied by adding the outlet of the microplasma as desired to produce nanomaterial including but not limited to nano-metal particles, carbon quantum dots, silicon quantum dots and plasma-activated water with higher yield rate.Type: ApplicationFiled: November 28, 2022Publication date: February 29, 2024Inventors: Ren-Jie Weng, Wei-Hung Chiang
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Patent number: 11807790Abstract: The present invention is related to a production method of a photoluminescence material by micro-plasma treatment for degrading plastic piece into multiple smaller molecular, a graphene quantum dot and the composite thereof. By using micro-plasma treatment, the production method provided by the present invention consumes very little energy and the processing steps is simple and efficiency without the existence of any organic solvent. The products obtained by the said treatment is high valued graphene quantum dot and graphene quantum dot composite with excellent photoluminescence ability for at least white, blue, green, cyan or yellow colors.Type: GrantFiled: July 19, 2021Date of Patent: November 7, 2023Assignee: National Taiwan University of Science and TechnologyInventors: Ren-Jie Weng, Wei-Hung Chiang
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Patent number: 11624155Abstract: In the porous substrate loaded with porous nano-particles structure and one-step micro-plasma production method thereof, since the micro-plasma system enhances the electron density and promotes reaction speed in the reaction without generating thermal effect, the method may be performed at an atmosphere environment. The nano-particles also can be quickly obtained by aforementioned micro-plasma system. The electromagnetic field generated by the micro-plasma can drive the nano-particles to be loaded onto the porous substrate in a one step, rapid and low cost process to improve the conventional techniques which require a relatively long procedure time and a complicated process.Type: GrantFiled: October 7, 2019Date of Patent: April 11, 2023Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Hung Chiang, Yi-Jui Yeh
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Publication number: 20220298412Abstract: The present invention is related to a production method of a photoluminescence material by micro-plasma treatment for degrading plastic piece into multiple smaller molecular, a graphene quantum dot and the composite thereof. By using micro-plasma treatment, the production method provided by the present invention consumes very little energy and the processing steps is simple and efficiency without the existence of any organic solvent. The products obtained by the said treatment is high valued graphene quantum dot and graphene quantum dot composite with excellent photoluminescence ability for at least white, blue, green, cyan or yellow colors.Type: ApplicationFiled: July 19, 2021Publication date: September 22, 2022Inventors: Ren-Jie Weng, Wei-Hung Chiang
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Patent number: 10947120Abstract: A production method of low dimensional nano-material comprises steps of: introducing a layered material; adding an intercalating agent into the layered material; and exfoliating the layered material by ball-milling to form the low dimensional material. Mechanochemical approaches for low dimensional nano-material like graphene quantum dots synthesis offer a promise of new reaction pathways, and greener and more efficient syntheses, making them potential approaches for low cost production.Type: GrantFiled: December 17, 2018Date of Patent: March 16, 2021Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Hung Chiang, Hao-Hsuan Chien
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Publication number: 20210062427Abstract: Present invention is related to a porous substrate loaded with porous nano-particles structure and one-step micro-plasma production method thereof. Due to the micro-plasma system enables to enhance the electron density and promotes reaction speed in the reaction without generating thermal effect, the present invention is allowed to be performed at atmosphere environment. The nano-particles also can be quickly obtained by aforementioned micro-plasma system. The electromagnetic field generated by the micro-plasma can drive the nano-particles to be loaded onto the porous substrate in a one step, rapid and low cost process to improve the conventional techniques which requires relatively long procedure time and complicated process.Type: ApplicationFiled: October 7, 2019Publication date: March 4, 2021Inventors: Wei-Hung Chiang, Yi-Jui Yeh
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Publication number: 20200062599Abstract: A production method of low dimensional nano-material comprises steps of: introducing a layered material; adding an intercalating agent into the layered material; and exfoliating the layered material by ball-milling to form the low dimensional material. Mechanochemical approaches for low dimensional nano-material like graphene quantum dots synthesis offer a promise of new reaction pathways, and greener and more efficient syntheses, making them potential approaches for low cost production.Type: ApplicationFiled: December 17, 2018Publication date: February 27, 2020Inventors: Wei-Hung Chiang, Hao-Hsuan Chien
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Patent number: 10535444Abstract: Provided is a composite carbon material including a substrate and a graphene oxide. The graphene oxide accounts for about 5 wt % to 60 wt % based on a total weight of the substrate and the graphene oxide. A method of preparing a composite carbon material is further provided. The prepared composite carbon material has excellent hydrophilic property, flexibility, electrical conductivity and dispersity.Type: GrantFiled: December 10, 2015Date of Patent: January 14, 2020Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Hung Chiang, Yen-Sheng Li
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Patent number: 10124327Abstract: A method of producing nano-composites has the following steps: providing a solution, with the solution having a substrate and a precursor of a zero-dimensional nanoparticles; and subjecting a surface of the solution to a plasma to activate the precursor to generate the zero-dimensional nanoparticles in the solution. The nanoparticles are self-assembled on the substrate uniformly to generate the nano-composites.Type: GrantFiled: November 10, 2015Date of Patent: November 13, 2018Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Hung Chiang, Huin-Ning Huang
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Patent number: 9708190Abstract: A method for producing a modified graphene includes the steps of intercalating or inserting a mixture of intercalating agents in a spacing between interlayers of carbon substrates or between carbon substrates, whereby the binding force between the interlayers of the carbon substrates or between the carbon substrates is weakened; and then exfoliating the pretreated carbon substrates to form the modified graphene. With the environmental friendly purpose, the method according to the present invention is useful for reducing the total amount of a strong acid. Therefore, the amount of the generated oxygen-containing functional groups attached on the modified graphene is modulated to avoid defects and maintain a yield over 80%.Type: GrantFiled: December 10, 2015Date of Patent: July 18, 2017Assignee: National Taiwan University of Science and TechnologyInventors: Wei-Hung Chiang, Yen-Sheng Li, Jia-Liang Liao
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Patent number: D1019655Type: GrantFiled: November 11, 2021Date of Patent: March 26, 2024Assignee: GETAC TECHNOLOGY CORPORATIONInventors: Wei-Sen Lu, Cheng-Hung Chiang
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Patent number: D1026916Type: GrantFiled: January 5, 2022Date of Patent: May 14, 2024Assignee: COMPAL ELECTRONICS, INC.Inventors: Hao-Jen Fang, Kung-Ju Chen, Wei-Yi Chang, Chun-Chieh Chen, Chih-Wen Chiang, Sheng-Hung Lee