Patents by Inventor Wei-Jhih Tseng
Wei-Jhih Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11988686Abstract: A vertical probe card and a fence-like probe thereof are provided. The fence-like probe has a probe length within a range from 5 mm to 8 mm. The fence-like probe includes a fence-like segment, a ceramic layer, a connection segment, and a testing segment. The fence-like segment has an elongated shape defining a longitudinal direction, and the fence-like segment has a penetrating slot that is formed along the longitudinal direction and that has a length greater than 65% of the probe length. The ceramic layer is directly formed on an outer surface of the fence-like segment and covers two long walls of the penetrating slot. The connection segment and the testing segment are respectively connected to two end portions of the fence-like segment, and is not formed on the connection segment and the testing segment.Type: GrantFiled: November 3, 2022Date of Patent: May 21, 2024Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.Inventors: Wei-Jhih Su, Chao-Hui Tseng, Hao-Yen Cheng, Mei-Hui Chen
-
Patent number: 11913973Abstract: A cantilever probe card device and a focusing probe thereof are provided. The focusing probe includes a soldering segment, a testing segment, two outer elastic arms spaced apart from each other, and a focusing portion. The testing segment is spaced apart from the soldering segment along an arrangement direction, and has a needle tip, an outer edge, and an inner edge that is opposite to the outer edge. Each of the two outer elastic arms has two end portions respectively connected to the soldering segment and the inner edge of the testing segment. The focusing portion is connected to the inner edge and is located between the needle tip and the two outer elastic arms, and has a plurality of focusing points arranged on one side thereof away from the two outer elastic arms.Type: GrantFiled: November 4, 2022Date of Patent: February 27, 2024Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.Inventors: Wei-Jhih Su, Chao-Hui Tseng, Hao-Yen Cheng, Rong-Yang Lai
-
Patent number: 10600776Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a first bipolar device connected to a first node, a second bipolar device connected to the first bipolar device and to a second node, and a metal-oxide-semiconductor (MOS) device connected to the first and second nodes and to the first and second bipolar devices and configured to shunt current in response to an ESD pulse received between the first and second nodes. The first bipolar device, the second bipolar device, and the MOS device are formed on a deep well structure. Other embodiments are also described.Type: GrantFiled: February 24, 2017Date of Patent: March 24, 2020Assignee: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Patent number: 10446539Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.Type: GrantFiled: February 24, 2017Date of Patent: October 15, 2019Assignee: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Patent number: 10431578Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes stacked first and second PNP bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and an NMOS transistor connected in series with the stacked first and second PNP bipolar transistors and the second node. An emitter and a base of the second PNP bipolar transistor are connected to a collector of the first PNP bipolar transistor. A gate terminal of the NMOS transistor is connected to a source terminal of the NMOS transistor. Other embodiments are also described.Type: GrantFiled: March 28, 2017Date of Patent: October 1, 2019Assignee: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Publication number: 20190198493Abstract: Embodiments of an ESD protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a first bipolar device connected to a first node, a second bipolar device connected to the first bipolar device and to a second node, a metal-oxide-semiconductor (MOS) device connected to the first and second nodes and to the first and second bipolar devices and configured to shunt current in response to an ESD pulse received between the first and second nodes, and a diode device connected to the first node, to a third node, to the first and second bipolar devices, and to the MOS device. Other embodiments are also described.Type: ApplicationFiled: December 21, 2017Publication date: June 27, 2019Applicant: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Publication number: 20180286855Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes stacked first and second PNP bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and an NMOS transistor connected in series with the stacked first and second PNP bipolar transistors and the second node. An emitter and a base of the second PNP bipolar transistor are connected to a collector of the first PNP bipolar transistor. A gate terminal of the NMOS transistor is connected to a source terminal of the NMOS transistor. Other embodiments are also described.Type: ApplicationFiled: March 28, 2017Publication date: October 4, 2018Applicant: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Publication number: 20180247927Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a first bipolar device connected to a first node, a second bipolar device connected to the first bipolar device and to a second node, and a metal-oxide-semiconductor (MOS) device connected to the first and second nodes and to the first and second bipolar devices and configured to shunt current in response to an ESD pulse received between the first and second nodes. The first bipolar device, the second bipolar device, and the MOS device are formed on a deep well structure. Other embodiments are also described.Type: ApplicationFiled: February 24, 2017Publication date: August 30, 2018Applicant: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng
-
Publication number: 20180247928Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.Type: ApplicationFiled: February 24, 2017Publication date: August 30, 2018Applicant: NXP B.V.Inventors: Da-Wei Lai, Wei-Jhih Tseng