Abstract: An optical sensing module and an electronic device are provided. The optical sensing module includes a substrate, a plurality of optical sensing elements, and a light-blocking element. The substrate has a sensing region and a non-sensing region around the sensing region. The plurality of optical sensing elements is disposed on the sensing region. The light-blocking element is disposed on the non-sensing region and a portion of the sensing region. The light-blocking element overlaps a portion of the plurality of optical sensing elements in a normal direction of the substrate.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: An electronic device includes a photodiode, a switching circuit, a readout circuit, and an energy storage device. The photodiode includes a first terminal and a second terminal and is configured to generate a signal according to a light. The switching circuit is electrically connected to the first terminal and the second terminal. When the electronic device operates in a sensing mode, the switching circuit electrically isolates the photodiode from the energy storage device so that the signal is provided to the readout circuit. When the electronic device operates in a charging mode, the switching circuit electrically connects the photodiode to the energy storage device so that the signal is provided to the energy storage device.

Abstract: An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.

Abstract: An air cleaning apparatus and comprising a housing that has at least one opening thereon, at least one rotation-driving device therein and at least one ultraviolet irradiator disposed in a suitable position therein. The rotation-driving device connects to a blade to drive such blade to rotate. A layer of photo catalyst is coated on the surface of the blade. The ultraviolet irradiator irradiates the photo catalytic layer on the blade to activate the photo catalyst to clean the air. The cleaned air then flows through the opening of the housing under the rotation of the blade to clean the air of an indoor and local space rapidly and produce an active air cleaning effect.