Patents by Inventor Wei-Ken LIN
Wei-Ken LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10854713Abstract: A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.Type: GrantFiled: January 8, 2018Date of Patent: December 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jia-Ming Lin, Shiu-Ko Jangjian, Chun-Che Lin, Ying-Lang Wang, Wei-Ken Lin, Chuan-Pu Liu
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Patent number: 10847634Abstract: Field effect transistor and methods of forming the same are disclosed. The field effect transistor includes a gate electrode, a contact etch stop layer (CESL), an inter layer dielectric (ILD) and a protection layer. The CESL includes SiCON and is disposed on a sidewall of the gate electrode. The IDL is laterally adjacent to the gate electrode. The protection layer covers the CESL and is disposed between the CESL and the ILD.Type: GrantFiled: January 31, 2018Date of Patent: November 24, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Te-En Cheng, Chun-Te Li, Kai-Hsuan Lee, Tien-I Bao, Wei-Ken Lin
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Patent number: 10833170Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: GrantFiled: October 4, 2019Date of Patent: November 10, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
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Publication number: 20200321465Abstract: In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Chia-Ling Chan, Meng-Yueh Liu, Wei-Ken Lin
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Patent number: 10797175Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.Type: GrantFiled: June 4, 2019Date of Patent: October 6, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Ken Lin, Chun Te Li, Chih-Peng Hsu
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Patent number: 10700197Abstract: In accordance with some embodiments, a method is provided. The method includes: forming a semiconductor fin protruding from a substrate; depositing a spacer layer over the semiconductor fin; after the depositing the spacer layer over the semiconductor fin, implanting a first dopant in the spacer layer and depositing a dopant layer of the first dopant on the spacer layer in alternating repeating steps; removing the dopant layer; and performing a thermal anneal process to drive the first dopant into the semiconductor fin from the spacer layer.Type: GrantFiled: November 17, 2017Date of Patent: June 30, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Ling Chan, Meng-Yueh Liu, Wei-Ken Lin
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Patent number: 10658252Abstract: A semiconductor structure with a stop layer for planarization process therein and a method for forming the same is disclosed. The method includes the steps of: forming a trench in a substrate and between active areas; filling the trench with isolation layer; doping the isolation layer with an element to form a doped isolation region; annealing the doped isolation region; and planarizing the annealed and doped isolation region and measuring a planarization depth thereof. The coefficients of thermal expansion (CTEs) of the stop layer, the dielectric layer, and the active area are different.Type: GrantFiled: April 22, 2019Date of Patent: May 19, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jia-Ming Lin, Wei-Ken Lin, Shiu-Ko JangJian, Chun-Che Lin
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Publication number: 20200105620Abstract: A method includes forming a first fin extending from a substrate, forming a first gate stack over and along sidewalls of the first fin, forming a first spacer along a sidewall of the first gate stack, the first spacer including a first composition of silicon oxycarbide, forming a second spacer along a sidewall of the first spacer, the second spacer including a second composition of silicon oxycarbide, forming a third spacer along a sidewall of the second spacer, the third spacer including silicon nitride, and forming a first epitaxial source/drain region in the first fin and adjacent the third spacer.Type: ApplicationFiled: July 1, 2019Publication date: April 2, 2020Inventors: Wei-Chun Tan, I-Hsieh Wong, Te-En Cheng, Yung-Hui Lin, Wei-Ken Lin, Wei-Yang Lee, Chih-Hung Nien
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Publication number: 20200035809Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: ApplicationFiled: October 4, 2019Publication date: January 30, 2020Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
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Publication number: 20200006077Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.Type: ApplicationFiled: September 13, 2019Publication date: January 2, 2020Inventors: Yin Wang, Hung-Ju Chou, Jiun-Ming Kuo, Wei-Ken Lin, Chun Te Li
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Patent number: 10504898Abstract: A fin field-effect transistor (FinFET) structure and a method for forming the same are provided. The FinFET structure includes a first fin structure that protrudes from a first region of a substrate. A second fin structure protrudes from a second region of the substrate. Isolation regions cover lower portions of the first fin structure and the second fin structure and leave upper portions of the first fin structure and the second fin structure above the isolation regions. A first liner layer is positioned between the lower portion of the first fin structure and the isolation regions in the first region. A second liner layer covers the lower portion of the second fin structure and is positioned between the second fin structure and the isolation regions in the second region. The first liner layer and the second liner layer are formed of different materials.Type: GrantFiled: August 28, 2017Date of Patent: December 10, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yin Wang, Chien-Chih Lin, Chien-Tai Chan, Wei-Ken Lin, Chun-Te Li
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Patent number: 10497577Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further includes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.Type: GrantFiled: November 1, 2017Date of Patent: December 3, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yin Wang, Hung-Ju Chou, Jiun-Ming Kuo, Wei-Ken Lin, Chun Te Li
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Patent number: 10490650Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: GrantFiled: November 14, 2017Date of Patent: November 26, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
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Publication number: 20190305125Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.Type: ApplicationFiled: June 4, 2019Publication date: October 3, 2019Inventors: Wei-Ken Lin, Chun Te Li, Chih-Peng Hsu
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Publication number: 20190279863Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.Type: ApplicationFiled: May 24, 2019Publication date: September 12, 2019Inventors: Wan-Yi Kao, Chung-Chi Ko, Li Chun Te, Hsiang-Wei Lin, Te-En Cheng, Wei-Ken Lin, Guan-Yao Tu, Shu Ling Liao
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Publication number: 20190252273Abstract: A semiconductor structure with a stop layer for planarization process therein and a method for forming the same is disclosed. The method includes the steps of: forming a trench in a substrate and between active areas; filling the trench with isolation layer; doping the isolation layer with an element to form a doped isolation region; annealing the doped isolation region; and planarizing the annealed and doped isolation region and measuring a planarization depth thereof. The coefficients of thermal expansion (CTEs) of the stop layer, the dielectric layer, and the active area are different.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Jia-Ming Lin, Wei-Ken Lin, Shiu-Ko JangJian, Chun-Che Lin
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Patent number: 10340384Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.Type: GrantFiled: April 30, 2018Date of Patent: July 2, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Ken Lin, Chun Te Li, Chih-Peng Hsu
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Publication number: 20190165156Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.Type: ApplicationFiled: April 30, 2018Publication date: May 30, 2019Inventors: Wei-Ken Lin, Chun Te Li, Chih-Peng Hsu
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Patent number: 10304677Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.Type: GrantFiled: April 13, 2018Date of Patent: May 28, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wan-Yi Kao, Chung-Chi Ko, Li Chun Te, Hsiang-Wei Lin, Te-En Cheng, Wei-Ken Lin, Guan-Yao Tu, Shu Ling Liao
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Publication number: 20190148514Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: ApplicationFiled: November 14, 2017Publication date: May 16, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin