Abstract: The image sensing structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes at least one first unit. The at least one first unit includes a plurality of first interconnects adjacent to the top side of the first semiconductor device, a row selector, and an analog-to-digital converter (ADC) connected to the row selectors. The second semiconductor device includes at least one second unit. The at least one second unit includes a photodiode facing the top side of the second semiconductor device. The photodiode is configured to receive the light incident on the top side of the second semiconductor device. The top side of the first semiconductor device is bonded to the bottom side of the second semiconductor device.

Abstract: A system includes a processor, a charger circuit and a battery management unit (BMU). The charger circuit charges a battery. The BMU includes an intelligent boot module that can send a boot signal to the processor based on information including a battery condition and system information. The processor starts a boot sequence based on the boot signal.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: Aspects of the disclosed technology provide solutions for identifying autonomous vehicle (AV) tests that provide a desired level of test coverage for testing or validating the AV software stack. A process of the disclosed technology can include steps for extracting a first set of features associated with a first set of test programs, tagging each respective test program with metadata tags, and identifying a second set of features associated with an updated set of AV program code. In some aspects, the process may further include steps for determining if the one or more tags match one or more features of the second set of features associated with the updated AV program code, and executing the respective test programs based on the one or more tags. Systems and machine-readable media are also provided.

Abstract: A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. The method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.

Abstract: Devices and method for forming a shielding assembly including a first chip package structure sensitive to magnetic interference (MI), a second chip package structure sensitive to electromagnetic interference (EMI), and a shield surrounding sidewalls and top surfaces of the first chip package structure and the second chip package structure, in which the shield is a magnetic shielding material. In some embodiments, the shield may include silicon steel, in some embodiments, the shield may include Mu-metal. The silicon-steel-based or Mu-metal-based shield may provide both EMI and MI protection to multiple chip package structures with various susceptibilities to EMI and MI.

Abstract: Training and/or utilizing a high-level neural network (NN) model, such as a sequential NN model. The high-level NN model, when trained, can be used to process a sequence of consecutive state data instances (e.g., N most recent, including a current state date instance) to generate a sequence of outputs that indicate a sequence of position deltas. The sequence of position deltas can be used to generate an intermediate target position for navigation and, optionally, an intermediate target orientation that corresponds to the intermediate target position. The intermediate target position and, optionally, the intermediate target orientation, can be provided to a low-level navigation policy, such as an MPC policy, and used by the low-level navigation policy as its goal position (and optionally goal orientation) for a plurality of iterations (e.g., until a new intermediate target position (and optionally new target orientation) is generated using the high-level NN model.

Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.

Abstract: A method of predicting occupancy of unseen areas in a region of interest (ROI) includes obtaining a depth image of the ROI, the depth image being captured from a first height; generating an occupancy map based on the obtained depth image, the occupancy map comprising an array of cells corresponding to locations in the ROI; and generating an inpainted map by inputting the occupancy map into a trained inpainting network, the inpainted map comprising an array of cells corresponding to the ROI, and wherein the inpainting network is trained by comparing an output of the inpainting network, based on inputting a training depth image taken from the first height, to a ground truth map, the ground truth map being based on a combination of the training depth image and a depth image taken at a height different than the first height.

Abstract: A liquid-cooling device includes multiple water blocks and at least one connection tube. Each of the water blocks has a water incoming end, a water outgoing end and a water-receiving space in communication with the water incoming end and the water outgoing end. The connection tube is disposed between each two water blocks. Two ends of the connection tube are respectively connected with the water incoming end of one of the two water blocks and the water outgoing end of the other water block, whereby the water-receiving spaces of the two water blocks communicate with each other via the connection tube. The connection tube has at least one bellows section between two ends of the connection tube. The liquid-cooling device solves the problems of the conventional liquid-cooling device that when the water block is welded, thermal deformation is produced to cause tolerance and the manufacturing cost is higher.

Abstract: Some embodiments relate to an integrated chip including a plurality of conductive structures over a substrate. A first dielectric layer is disposed laterally between the conductive structures. A spacer structure is disposed between the first dielectric layer and the plurality of conductive structures. An etch stop layer overlies the plurality of conductive structures. The etch stop layer is disposed on upper surfaces of the spacer structure and the first dielectric layer.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: Provided are modified arginine deiminase (ADI) proteins, including ADI proteins that comprise one or more substitutions which increase expression in bacteria as insoluble and refoldable inclusion bodies. Also provided are methods of producing the modified ADI proteins, compositions comprising the ADI proteins, and related methods of treating arginine-dependent and related diseases such as cancer.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: A connecting structure includes a first dielectric layer, a first connecting via in the first dielectric layer, a second connecting via in the first dielectric layer, and an isolation between the first connecting via and the second connecting via. The isolation separates the first and second connecting vias from each other. The first connecting via, the isolation and the second connecting via are line symmetrical about a central line perpendicular to a top surface of the first dielectric layer.

Abstract: A chip packaging structure and a chip packaging method are provided. The chip packaging structure includes a first substrate, an image sensing chip, a supporting member, a second substrate, and an encapsulant. The image sensing chip is disposed on an upper surface of the first substrate, and the image sensing chip has an image sensing region. The supporting member is disposed on an upper surface of the image sensing chip and surrounds the image sensing region. The supporting member is formed by stacking microstructures with each other, so that the supporting member has pores. The second substrate is disposed on an upper surface of the supporting member, and the second substrate, the supporting member, and the image sensing chip define an air cavity. The encapsulant is attached to the upper surface of the first substrate and a side surface of the second substrate and filled into the pores.

Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.

Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: Present disclosure provides a FinFET structure, including a substrate, a fin protruding from the substrate, including a first portion and a second portion below the first portion, wherein the first portion includes a first dopant concentration of a dopant, and the second portion includes a second dopant concentration of the dopant, the second dopant concentration is greater than the first dopant concentration, a gate over the fin, wherein the second portion of the fin is below a bottom surface of the gate, and an insulating layer over the substrate and proximal to the second portion of the fin, wherein at least a first portion of the insulating layer includes a third dopant concentration of the dopant, the third dopant concentration is greater than the first dopant concentration.