Abstract: An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: A pixel sensor may include a main deep trench isolation (DTI) structure and one or more sub-DTI structures in a substrate of the pixel sensor to increase the quantum efficiency of the pixel sensor at large incident angles. The one or more sub-DTI structures may be located within the perimeter of the main DTI structure and above a photodiode. The one or more sub-DTI structures may be configured to provide a path of travel for incident light into the photodiode from large incident angles in that the one or more sub-DTI structures may be filled with an oxide material to increase light penetration into the one or more sub-DTI structures. This may reduce reflections at a top surface of the substrate, thereby permitting incident light to refract into the substrate and toward the photodiode.

Abstract: A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: A radiotherapy system and a therapy plan generation method therefor. The radiotherapy system includes a beam irradiation apparatus, a therapy plan module, and a control module. The beam irradiation apparatus generates a beam for therapy and irradiates an irradiated body to form an irradiated part. A tissue model template library of the irradiated body is stored in the therapy plan module; the therapy plan module performs dosage simulation calculation according to the tissue model template library, medical imaging data of the irradiated part, and a parameter of the beam for therapy generated by the beam irradiation apparatus, and generates a therapy plan. The control module retrieves, from the therapy plan module, the therapy plan corresponding to the irradiated body, and controls the beam irradiation apparatus to irradiate the irradiated body according to the therapy plan determined by the therapy plan generation method.

Abstract: The invention provides a radiotherapy system and a method for controlling safety interlock thereof. The radiotherapy system includes a beam generating apparatus, which includes a charged particle beam generating apparatus and a neutron beam generating portion interacting with a charged particle beam generated by the charged particle beam generating apparatus to generate a therapeutic neutron beam to irradiate into a first irradiation chamber. In operation, the radiotherapy system determines whether there is a safety problem by a beam control module according to the received operation data of the charged particle beam generating apparatus or by a system control module according to the received operation data of the radiotherapy system, and the beam control module or the system control module controls the charged particle beam generating apparatus through the beam control module, to generate the charged particle beam or not, or interact with the neutron beam generating portion.

Abstract: A neutron capture treatment device includes a neutron beam irradiation system, a detection system, and a correction system, the neutron beam irradiation system being used for producing neutron beams, the detection system being used for detecting irradiation parameters during the neutron beam irradiation treatment, and the correction system being used for correcting a preset neutron dosage; the accuracy of the neutron beam dosage irradiated to a sick body is thereby ensured at the source.

Abstract: Disclosed is a neutron capture therapy apparatus. The neutron capture therapy apparatus is used for irradiating a neutron beam with a preset neutron dose to an object to be irradiated. The neutron beam enters the object and undergoes a nuclear reaction with boron in the object. The neutron capture therapy apparatus includes a correction system for correcting the preset neutron dose.

Abstract: Disclosed are a neutron capture therapy device and an operation method of a monitoring system. The neutron capture therapy device includes a neutron beam irradiation system, a detection system and the monitoring system. The neutron beam irradiation system generates a neutron beam for performing neutron irradiation therapy on a sick body. The detection system is used for detecting irradiation parameters during a neutron beam irradiation therapy, and the monitoring system is used for controlling the whole neutron beam irradiation process. The monitoring system includes a storage part for storing the irradiation parameters, a control part for executing a therapy plan according to the irradiation parameters stored in the storage part, and a correction part for correcting part of the irradiation parameters stored in the storage part. The disclosure improves the accuracy of the dosage of the neutron beam for irradiating the sick body.

Abstract: Disclosed are a radiotherapy system and a treatment plan generation method therefor. The radiotherapy system includes a beam irradiation device, a treatment planning module and a control module. The beam irradiation device generates a beam for treatment and irradiates same to a body to be irradiated to form an irradiated site, the treatment planning module generates a treatment plan on the basis of parameters of the beam for treatment and medical image data of the irradiated site, and the control module retrieves a treatment plan corresponding to said body from the treatment planning module and controls the beam irradiation device to sequentially irradiate said body according to at least two irradiation angles determined according to the treatment plan generation method and the irradiation time corresponding to each irradiation angle.

Abstract: A radiation treatment system and an operation procedure of an irradiation parameter verification device. The radiation treatment system comprises a radiation generation device, an irradiation chamber used for placing a patient, a carrying device used for transferring and bearing the patient, a collimator provided in the irradiation chamber, an irradiation parameter verification device used for determining whether the position of the patient is suitable for performing radiation irradiation treatment or not, and a collimator model, wherein the collimator comprises a collimator outlet; the collimator model comprises a collimator model outlet; the shape and the size of the collimator model outlet are the same as those of the collimator outlet, and the size of the collimator model in the direction perpendicular to the collimator model outlet is smaller than the size of the collimator in the direction perpendicular to the collimator outlet.

Abstract: A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

Abstract: A beam shaping assembly (10) used in a neutron capture system and capable of changing an irradiation range of a neutron beam. The beam shaping assembly includes: a beam inlet (11), a target (12), a moderator (13) adjoining the target (12), a reflector (14) surrounding the moderator (13), a thermal neutron absorber (15) adjoining the moderator (13), a radiation shield (16) arranged inside the beam shaping assembly (10), and a beam outlet (17). The beam shaping assembly (10) further includes replacement components (21, 22) that can be attached to and detached from the beam shaping assembly (10) to change the irradiation range of the neutron beam.

Abstract: An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.

Abstract: A neutron capture therapy system, including a vacuum tube for transmitting a charged particle beam, a neutron generating part for generating a neutron beam, and a beam shaping assembly for shaping the neutron beam. The beam shaping assembly is provided with an accommodating part. The neutron generating part is disposed at an end of the vacuum tube. The vacuum tube has a first position and a second position. The neutron capture therapy system further includes a removal device, which includes a moving part that drives the vacuum tube to move. The moving part has a third position and a fourth position. When the moving part is in the third position, the vacuum tube is in the first position. When the moving part is in the fourth position, the vacuum tube is in the second position, and the neutron generating part is located at the outer side of the beam shaping assembly.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

Abstract: A radiation irradiation system including a radiation generating device and a carrying table, a beam generated by the radiation generating device irradiates an irradiated object on the carrying table, the radiation irradiation system further includes a carrying table positioning device, the carrying table is supported by the carrying table positioning device, the carrying table positioning device includes a positioning mechanism, the positioning mechanism includes a linear axis, the carrying table positioning device may horizontally move along the linear axis, and an extending direction of the linear axis is parallel to an irradiation direction of beams generated by the radiation generating device. In the positioning process of the carrying table, most of the carrying table positioning device is located in the space between the linear axis and the beam outlet, the radioactivity and life-span shortening caused by the radiation of the various components of the carrying table positioning device are reduced.