Patents by Inventor Wei-Lun Hu

Wei-Lun Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabricating the same
    Patent number: 11908796
    Abstract: A semiconductor device includes a substrate, a first metal layer, a dielectric layer, and a second metal layer. The substrate includes a dense region and an isolation region. The first metal layer is disposed over the substrate and includes a first metal pattern and a second metal pattern. The first metal pattern is located in the dense region. There is at least one slot in the first metal pattern. The second metal pattern is located in the isolation region. The dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the dielectric layer.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yu Tseng, Wei-Lun Hu
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20230065711
    Abstract: A semiconductor device includes a substrate, a first metal layer, a dielectric layer, and a second metal layer. The substrate includes a dense region and an isolation region. The first metal layer is disposed over the substrate and includes a first metal pattern and a second metal pattern. The first metal pattern is located in the dense region. There is at least one slot in the first metal pattern. The second metal pattern is located in the isolation region. The dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the dielectric layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yu Tseng, Wei-Lun Hu