Abstract: A substrate carrier, includes: a unitary body fabricated from a single block of graphite, wherein the body comprises a back plate, and a pair of spaced apart, substantially parallel, side rails, wherein each of the side rails comprises: an inwardly facing surface extending outwardly of the back plate; a longitudinally extending selenium vapor bore formed therein, a top end of the selenium vapor bore being open and configured for coupling to a selenium supply container for receiving selenium vapor by gravity, a bottom end of the selenium vapor bore being closed; an inwardly directed selenium vapor channel; a plurality of selenium vapor outlets disposed between the selenium vapor bore and the inwardly directed selenium vapor channel so as provide a plurality of conduits between the selenium vapor bore and the selenium vapor channel; and, a longitudinally extending engagement slot formed in the inwardly facing surface of each side rail adjacent the back plate to engage and hold a substrate in proximity to the ba

Abstract: A substrate carrier, includes: a unitary body fabricated from a single block of graphite, wherein the body comprises a back plate, and a pair of spaced apart, substantially parallel, side rails, wherein each of the side rails comprises: an inwardly facing surface extending outwardly of the back plate; a longitudinally extending selenium vapor bore formed therein, a top end of the selenium vapor bore being open and configured for coupling to a selenium supply container for receiving selenium vapor by gravity, a bottom end of the selenium vapor bore being closed; an inwardly directed selenium vapor channel; a plurality of selenium vapor outlets disposed between the selenium vapor bore and the inwardly directed selenium vapor channel so as provide a plurality of conduits between the selenium vapor bore and the selenium vapor channel; and, a longitudinally extending engagement slot formed in the inwardly facing surface of each side rail adjacent the back plate to engage and hold a substrate in proximity to the ba

Abstract: A solar cell module includes a substrate; an absorber layer formed over the substrate; a porous alumina passivation layer formed on an upper surface of the absorber layer; a buffer layer conformably formed over the passivation layer; and a transparent conducting oxide layer conformably formed over the buffer layer.

Abstract: A method for reducing light-induced-degradation in manufacturing a solar cell, includes the steps of: (a) irradiating the solar cell with an irradiance; (b) maintaining the solar cell within a temperature range; (c) removing the solar cell away from the irradiance of step (a) after a time; and (d) determining the irradiance, the temperature range, and the time such that the LID is optimally below a predetermined LID.

Abstract: A method for reducing light-induced-degradation in manufacturing a solar cell, comprises the steps of: (a) irradiating the solar cell with an irradiance; (b) maintaining the solar cell within a temperature range; (c) removing the solar cell away from the irradiance of step (a) after a time; and (d) determining the irradiance, the temperature range, and the time such that the LID is optimally below a predetermined LID.

Abstract: A solar cell module includes a substrate; an absorber layer formed over the substrate; a porous alumina passivation layer formed on an upper surface of the absorber layer; a buffer layer conformably formed over the passivation layer; and a transparent conducting oxide layer conformably formed over the buffer layer.

Abstract: Provided are methods for forming antireflective layers on solar cells using wet chemical processes and solar cells with anti-reflective layers formed of ZnO based nanorods. Self-assembling ZnO nanorods are generated in the chemical solution without any catalysts. The nanorods are formed to different shapes such as hexagonal, cubic, and circular in cross-section. The refractive index of the ARC layer formed of the nanorods is modulated by controlling the diameter and length of the nanorods by controlling the Molarity of the solution used to form the nanorods. A correlation is established between the refractive index and solution Molarity and a solution is prepared with the desired Molarity. The nanorods are formed from HMT ([CH2]6NH4) and a dissociative Zn2+/OH? chemical such as Zn(NO3)2.

Abstract: A method and apparatus for forming a solar cell can include a heater apparatus having one or more heater elements in a deposition processing system, a front cover covering the one or more heater elements from a front side, and a back metal reflector mating with the front cover on a back side and enclosing the one or more heater elements. The method can include disposing a plurality of substrates about a plurality of surfaces of a substrate apparatus that is operatively coupled to sequentially feed a substrate within a vacuum chamber, forming an absorber layer over a surface of each one of the plurality of substrates and heating the surface of each one of the plurality of substrates with the heater apparatus as described above.

Abstract: A system for depositing selenium on a substrate comprises includes a substrate carrier including a body, means for holding the substrate, and a plurality of selenium vapor outlets formed in the body to direct a flux of selenium vapor onto the substrate. A selenium supply container provides selenium vapor to the selenium vapor outlets. At least one temperature sensor is coupled to the substrate carrier to sense temperature of the substrate. A heat source is positioned to heat the substrate. A controller is coupled to the temperature sensor and the heat source.

Abstract: The present invention relates to a thin film solar cell and manufacturing method thereof. The thin film solar cell comprises a substrate, a front electrode layer, an absorber layer and a rear electrode layer stacked in such sequence, wherein the front electrode layer is formed by doping group III element into a zinc oxide. The thin-film solar cell further comprise an interlayer disposed between the front electrode layer and the absorber layer wherein the interlayer has p-type holes formed by introducing nitrogen-based gas having Argon (Ar) as a carrier gas interacted with the group III element by using PECVD or thermal treatment, implementation and diffusion on the front electrode layer surface so that the concentration of nitrogen atoms in the interlayer is greater than 1015/cm3.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.

Abstract: A thin film solar cell structure having light absorbing layer made of chalcopyrite powders is provided. The thin film solar cell structure includes a substrate, a back electrode layer, a light absorbing layer, and a transparent conductive layer stacked one on another in that sequence. The light absorbing layer includes at least one layer of chalcopyrite powder stack structure constituted of a p-type chalcopyrite powder layer and an n-type chalcopyrite powder layer stacked on each other. The p-type chalcopyrite powder layer includes a plurality of single phase p-type chalcopyrite powders, and the n-type chalcopyrite powder layer includes a plurality of single phase n-type chalcopyrite powders. The p-type chalcopyrite powders and the n-type chalcopyrite powders are I-III-VI2 compound materials. The group I element is Cu or a complex alloy compound thereof. The group III element is In, Ga, Al, or a complex alloy compound thereof.

Abstract: The present invention discloses a dual-side light-absorbing thin film solar cell that comprises a substrate, a p-type transparent conductive layer, a semiconductive film and a transparent conductive layer. The p-type transparent conductive layer is formed on the substrate and its material is a p-type transparent conductive material, for example, CuMO2, Cu2XSrXO2, or others. M is a IIIA element that is aluminum (Al), boron (B), gallium (Ga), indium (In), or thallium (Tl), and X is greater than zero. The semiconductive film is formed on the p-type transparent conductive layer. The semiconductive film comprises a p-type semiconductive layer and a n-type semiconductive layer. The n-type semiconductive layer is formed on the p-type semiconductive layer. The transparent conductive layer is formed on the semiconductive film. Such structure allows lights enter through both sides of the thin film solar cell so that the efficiency of the elements and the photoelectric conversion rate is improved.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.