Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: Embodiments of the present disclosure relate to a system, a software application, and methods of digital lithography for semiconductor packaging. The method includes comparing positions of vias and via locations, generating position data based on the comparing the positions of vias and the via locations, providing the position data of the vias to a digital lithography device, updating a redistributed metal layer (RDL) mask pattern according to the position data such that RDL locations correspond to the positions of the vias, and projecting the RDL mask pattern with the digital lithography device.

Abstract: A light emitting control device for a light emitting diode print head includes a control unit, a pulse-mask unit, a strobe unit and a data output unit. The pulse-mask unit outputs n clock signals in sequence to a light emitting diode print head. The strobe unit outputs a strobe signal to the light emitting diode print head, so as to switch on the light emitting diode print head. The data output unit outputs a print data signal to the light emitting diode print head. When the pulse-mask unit outputs a k-th clock signal of the n clock signals, the pulse-mask unit delays the k-th clock signal for a predetermined time, and the data output unit pauses outputting the print data signal. After the predetermined time, the pulse-mask unit and the data output unit continue to output the rest of the clock signals and the print data signal.

Abstract: A light emitting control device for a light emitting diode print head includes a control unit, a pulse-mask unit, a strobe unit and a data output unit. The pulse-mask unit outputs n clock signals in sequence to a light emitting diode print head. The strobe unit outputs a strobe signal to the light emitting diode print head, so as to switch on the light emitting diode print head. The data output unit outputs a print data signal to the light emitting diode print head. When the pulse-mask unit outputs a k-th clock signal of the n clock signals, the pulse-mask unit delays the k-th clock signal for a predetermined time, and the data output unit pauses outputting the print data signal. After the predetermined time, the pulse-mask unit and the data output unit continue to output the rest of the clock signals and the print data signal.

Abstract: A process for producing crystalline silicon nitride powder by a gas phase reaction of ammonia (NH.sub.3) and silane (SiH.sub.4) with a molar ratio of 7:1 or above at a temperature of 900.degree. C. or above and the heating the as-reacted amorphous powders at a temperature of 1350.degree. C. to 1800.degree. C. to convert the powders to a highly pure and submicron crystalline silicon nitride powder comprising at least a 90% .alpha.-Si.sub.3 N.sub.4 phase.