Abstract: In implementations of image-based searches for templates, a computing device implements a search system to generate an embedding vector that represents an input digital image using a machine learning model. The search system identifies templates that include a candidate digital image to be replaced by the input digital image based on distances between embedding vector representations of the templates and the embedding vector that represents the input digital image. A template of the templates is determined based on a distance between an embedding vector representation of the candidate digital image included in the template and the embedding vector that represents the input digital image. The search system generates an output digital image for display in a user interface that depicts the template with the candidate digital image replaced by the input digital image.

Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

Abstract: Disclosed is food-grade lubricating grease and a method for preparing the same, belonging to the technical field of lubricating grease. The food-grade lubricating grease is prepared from the following components in percentage by mass: 75% to 85% of food-grade white oil, 6% to 16% of stearic acid, 2.0% to 3.0% of benzoic acid, 4.7% to 8.7% of aluminum isopropoxide, 1.0% to 1.5% of water and 1.0% to 7.0% of nano-PTFE, and has good extreme-pressure, abrasion-resistant and friction-reduction properties, a last non-seizure load (PB) reaching 411.6 N, a sintering load (PD) reaching 1,960 N, and a friction coefficient reduced by 18.5%. The lubricating grease can be used for a food production industry and in household food appliances, the service life of a device and the service life of the food-grade lubricating grease are effectively prolonged, and meanwhile, food security is guaranteed to a certain degree.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A radiation therapy system is disclosed. The radiation therapy system includes a gantry, a first radiation source, and a second radiation source. The gantry is configured to have a cavity extending in a direction along a rotation axis, and the cavity is configured to house a target object. The first radiation source is mounted on the gantry, and configured to emit a treatment beam to a treatment area of the target object. The second radiation source is mounted on the gantry, and configured to emit an imaging beam to an imaging area of the target object. The treatment area partially overlaps the imaging area. A rotation plane of the first radiation source and a rotation plane of the second radiation source are distributed in a direction along the rotation axis.

Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: A gene sequencing reaction device, a gene sequencing system and a gene sequencing reaction method. The gene sequencing reaction device includes: a supporting platform; a dipping container disposed on the supporting platform, wherein the dipping container has a dipping reaction area, and the dipping reaction area is configured to hold a chemical reagent for gene sequencing reaction, so as to dip a sequencing chip having a DNA sample loading structure on the surface and having a DNA sample loaded thereon in the chemical reagent to perform a gene sequencing reaction; a temperature control apparatus, configured to control the temperature of the chemical reagent in the dipping reaction area; and a transfer apparatus, configured to insert the sequencing chip into the dipping reaction area or pull out the sequencing chip from the dipping reaction area.

Abstract: An ultraviolet (UV) lamp assembly of a UV curing tool is provided for curing a low dielectric constant (low-k) material layer of a semiconductor wafer. The UV lamp assembly includes: a UV lamp which emits UV light; a first reflector arranged proximate to a first side of the UV lamp, the first reflector including a first surface facing the UV lamp from which UV light emitted by the UV lamp is at least partially reflected; and a UV reflective coating partially coating the first surface of the reflector. Suitably, a plurality of areas of the first surface of the reflector remain uncoated with the UV reflective coating and the plurality of uncoated areas are arranged to promote a uniform exposure of the semiconductor wafer to UV irradiation.

Abstract: Disclosed is a wireless detection device for quickly positioning a throw-fill stone falling depth and long-term settlement in blasting silt-squeezing construction, including a gravity ball and a signal receiving, processing and controlling system. The gravity ball is internally provided with test mechanisms, signal collecting and transmitting apparatuses and batteries. Also disclosed is a wireless detection method implemented using the above wireless detection device. The device and the method can detect the throw-fill stone falling depth and distribution situation in a blasting silt-squeezing construction process in real time, so that the effect evaluation and quality control of blasting silt-squeezing can be monitored in real time, the situation that the falling of throw-fill stones is incomplete can be acquired in time, monitoring data support can be provided for corresponding processing measures, and long-term settlement and other monitoring can be carried out.

Abstract: Methods and systems for training a model include determining class prototypes of time series samples from a training dataset. A task corresponding to the time series samples is encoded using the class prototypes and a task-level configuration. A likelihood value is determined based on outputs of a time series density model, a task-class distance from a task embedding model, and a task density model. Parameters of the time series density model, the task embedding model, and the task density model are adjusted responsive to the likelihood value.

Abstract: An apparatus for downhole multi-dimensional imaging includes an acquisition unit configured to acquire a formation resistivity signal, an ultrasonic echo signal and an orientation signal regularly; a sector calculation unit configured to calculate, based on said orientation signal, a sector where a currently acquired signal is from; and a multi-dimensional imaging unit, configured to calculate, based on the signals acquired by the acquisition unit, data of resistivity, distance from a drilling tool to a borehole wall and ultrasonic echo amplitude, and distribute said data into all sectors for feature recognition and extraction, thus obtaining key features characterizing a current formation being drilled, said key features being transmitted to ground for guiding drilling process. The structural complexity and the length of the downhole imaging measurement instrument can be reduced, and feature recognition can be directly performed on the imaging data underground.

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.