Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.

Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 nm, high aspect ratio, and a uniform diameter of tip-body.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract: A phase change memory (PCM) device includes a substrate, bottom electrodes disposed in the substrate, a first dielectric layer disposed on the substrate, second dielectric layers, third dielectric layers, cup-shaped thermal electrodes, top electrodes, and PC material spacers. In the PCM device, each cup-shaped thermal electrode contacts with each bottom electrode. Second and third dielectric layers are disposed over the substrate in different directions, wherein each of the second and third dielectric layers covers a portion of the area surrounded by each cup-shaped thermal electrode, and the third dielectric layers overlay the second dielectric layers. The top electrodes are disposed on the third dielectric layers, wherein a plurality of stacked structure composed of the third dielectric layers and the top electrodes are formed thereon.

Abstract: In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is formed over the substrate. Second dielectric layers are formed on the substrate. Stacked structures are formed on the substrate. A PC material film is formed over the substrate and covers the stacked structures and the second dielectric layers. The PC material film is anisotropically etched to form PC material spacers on sidewalls of the stacked structures, and each of the PC material spacers physically and electrically contacts each of the cup-shaped thermal electrodes and top electrodes. The PC material spacers include phase change material. The PC material spacers are over-etched to remove the PC material film on the sidewalls of the second dielectric layers.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is formed over the substrate. Second dielectric layers are formed on the substrate. Stacked structures are formed on the substrate. A PC material film is formed over the substrate and covers the stacked structures and the second dielectric layers. The PC material film is anisotropically etched to form PC material spacers on sidewalls of the stacked structures, and each of the PC material spacers physically and electrically contacts each of the cup-shaped thermal electrodes and top electrodes. The PC material spacers include phase change material. The PC material spacers are over-etched to remove the PC material film on the sidewalls of the second dielectric layers.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the hollow cone spacer, the hollow column spacer, and the base layer form a space, and sidewalls of the hollow cone spacer and the hollow column spacer are made of silicon-containing organic or inorganic materials.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and conductive layers. Any two of the conductive layers are spaced apart by one of the conductive layers. A first electrode structure with a first sidewall and a second sidewall is formed on the stacked structure. A plurality of heating electrodes is placed on the conductive layers and adjacent to the first sidewall and the second sidewall of the first electrode structure. A pair of phase change material spacers is placed on the first sidewall and the second sidewall of the first electrode structure. The phase change material sidewalls cover the plurality of heating electrodes.

Abstract: A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidewalls with different thicknesses. A phase change spacer is formed to cross the sidewalls with different thicknesses. A top electrode is electrically contacted to the phase change spacer.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The lamination structure comprises a plurality of conductive layers arranged from bottom to top and separated from each other, and each of the conductive layers has a channel region and an adjacent source/drain doped region along the first direction. A first gate structure is on a sidewall of the channel region of each conductive layer. The first gate structure comprises an inner first gate insulating layer and an outer first gate conductive layer.

Abstract: A recticle pattern applied to a mix-and-match lithography process is described. The recticle has a transparent region and a non-transparent region. The transparent region includes a device region and a scribe line region. The recticle pattern includes a plurality of device patterns, a portion of a first and a second set of alignment measure figures, and a set of overlay measure figures. The first and the second sets of the alignment measure figures are disposed on the scribe line region and the non-transparent region. The first and the second sets of the alignment measure figures respectively self-align to produce two sets of composite alignment measure figures after the exposure process. A set of overlay measure figures includes four rectangular boxes respectively disposed in the four areas formed in the corners of where the non-transparent region and the scribe line region meet to correct the overlay error caused by recticle rotation.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract: A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 mm, high aspect ratio, and a uniform diameter of tip-body.