Abstract: A hardfacing submerged arc welding device includes an alloy-powder supplying unit for supplying alloy powders onto a workpiece, a flux-powder supplying unit for supplying flux powders onto the workpiece, and a welding-wire supplying unit for supplying a welding wire onto the workpiece.

Abstract: The present invention discloses a localized plasmon resonance sensing device and a fiber optic structure. The device comprises an optical fiber and a noble metal nanoparticle layer. The optical fiber has a plurality of notches, and such notches are located on the side surface of the optical fiber. The noble metal nanoparticle layer is located at the notch. As a result, when a light is launched into the optical fiber, a detecting unit can be used to detect a localized plasmon resonance signal which is generated by the interaction between the noble metal nanoparticle layer and the light.

Abstract: The present invention provides a lead-free brass alloy, including 0.3 to 0.8 wt % of aluminum, 0.01 to 0.4 wt % of bismuth, 0.05 to 1.5 wt % of iron and more than 96 wt % of copper and zinc, wherein the copper is present in an amount ranging from 58 to 75 wt %. The brass alloy of the present invention meets the standard of the environmental regulation, wherein the lead content is less than 0.25 wt % based on the weight of the alloy. Further, the brass alloy of the present invention has 0.05 to 1.5 wt % of iron and less than 0.4% of bismuth, so as to lower production cost, eliminate cracks and increase production yield.

Abstract: The present invention discloses a fiber-optic localized plasmon resonance (FO-LPR) sensing device and a sensing system thereof, the FO-LPR sensing system includes a light source, a FO-LPR sensing device and a detector, and the light source provides a light beam entered into the FO-LPR sensing device, and the detector generates a detected signal according to an emergent light from the FO-LPR sensing device. The FO-LPR sensing device includes an optical fiber, a noble metal nanoparticle layer and a filter film layer. The filter film layer is having a porous material, and the porous material comes with a pore diameter or a property selected according to a feature of a sample, while an interfering substance in the sample is isolated.

Abstract: Manufacturing method of cell cryopreservation tube comprises the steps of providing a metal tubule having an inside wall and an outside wall. Smoothing the inside wall of the metal tubule thereby forming a smooth surface on the inside wall, and the roughness of the smooth surface is named the first roughness. Roughening the outside wall of the metal tubule thereby forming a rough surface on the outside wall, and the roughness of the rough surface is called the second roughness. The magnitude of the second roughness is greater than the first roughness.

Abstract: The present invention provides a lead-free brass alloy, including 0.3 to 0.8 wt % of aluminum, 0.01 to 0.4 wt % of bismuth, 0.05 to 1.5 wt % of iron and more than 96 wt % of copper and zinc, wherein the copper is present in an amount ranging from 58 to 75 wt %. The brass alloy of the present invention meets the standard of the environmental regulation, wherein the lead content is less than 0.25 wt % based on the weight of the alloy. Further, the brass alloy of the present invention has 0.05 to 1.5 wt % of iron and less than 0.4% of bismuth, so as to lower production cost, eliminate cracks and increase production yield.

Abstract: The present invention discloses a localized plasmon resonance sensing device and a fiber optic structure. The device comprises an optical fiber and a noble metal nanoparticle layer. The optical fiber has a plurality of notches, and such notches are located on the side surface of the optical fiber. The noble metal nanoparticle layer is located at the notch. As a result, when a light is launched into the optical fiber, a detecting unit can be used to detect a localized plasmon resonance signal which is generated by the interaction between the noble metal nanoparticle layer and the light.

Abstract: A low lead brass alloy and a method for producing a product comprising the low lead brass alloy are proposed. The low lead brass comprises 0.05 to 0.3 wt % of lead (Pb); 0.3 to 0.8 wt % of aluminum (Al); 0.01 to 0.4 wt % of bismuth (Bi); 0.1 to 0.15 wt % of microelements; and more than 97.5 wt % of copper (Cu) and zinc (Zn), wherein copper is in an amount ranging from 58 to 70 wt %.

Abstract: The present invention discloses a fiber-optic localized plasmon resonance (FO-LPR) sensing device and a sensing system thereof, the FO-LPR sensing system includes a light source, a FO-LPR sensing device and a detector, and the light source provides a light beam entered into the FO-LPR sensing device, and the detector generates a detected signal according to an emergent light from the FO-LPR sensing device. The FO-LPR sensing device includes an optical fiber, a noble metal nanoparticle layer and a filter film layer. The filter film layer is having a porous material, and the porous material comes with a pore diameter or a property selected according to a feature of a sample, while an interfering substance in the sample is isolated.

Abstract: Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.

Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

Abstract: A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.

Abstract: A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.

Abstract: A diaphragm flexure for a polishing head on a chemical mechanical polisher, particularly a Titan (™) polishing head. The diaphragm flexure includes an annular flexure body having at least one bulge or protrusion formed in the upper surface thereof and at least one bulge or protrusion formed in the lower surface thereof. In assembly of the polishing head, each of the at least one inner and outer bulge or protrusion is inserted in a corresponding groove provided in a surface of an adjacent element of the polishing head. The elements in the polishing head are secured together with the flexure body typically by extending screws through respective screw openings in the elements and the flexure body.

Abstract: A method of fabricating an interconnect line comprises forming a wall, depositing an etch mask having a thickness that decreases towards a bottom of the wall, and isotropically etching the wall at the bottom to form the interconnect line having a pre-determined gap between the substrate and a bottom of the line.