Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: Semiconductor devices and methods of fabrication are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin and into a substrate as an initial step in forming a source/drain region. A first semiconductor material is epitaxially grown from channels exposed along sidewalls of the opening to form first source/drain structures. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over and to fill a space between the first source/drain structures. A bottom of the second source/drain structure is located below a bottommost surface of the first source/drain structures. The second semiconductor material has a greater concentration percentage by volume of germanium than the first semiconductor material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the second semiconductor material being electrically coupled to the nanostructures.

Abstract: A stand adjustment device has a tripod-connecting member, a connecting seat, a proximal clamping plate, a boom-connecting tube, a locking shaft, and a manual operating member. The connecting seat is rotatably located around the tripod-connecting member. The proximal clamping plate is detachably attached to a side of the connecting seat. One end of the locking shaft is movably disposed in the boom-connecting tube. The boom is slidably mounted through the boom-connecting tube and the locking shaft. The locking shaft is slidably mounted through the boom-connecting tube, the proximal clamping plate, and the connecting seat such that the boom-connecting tube is rotatable relative to the connecting seat. The manual operating member and the locking shaft are configured to clamp the boom-connecting tube, the proximal clamping plate, and the connecting seat therebetween into a locked condition.

Abstract: An optical device for aberration correction (e.g., chromatic aberration correction) is disclosed. The optical device includes an optical component (e.g., a spherical lens) and a metasurface optically coupled to the optical component. The metasurface includes a plurality of nanostructures that define a phase profile. The phase profile corrects an aberration (e.g., chromatic aberration) caused by the optical component. The resulting optical device becomes diffraction-limited (e.g., for the visible spectrum) with the metasurface.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.

Abstract: A centrifugal heat dissipation fan of a portable electronic device. The centrifugal heat dissipation fan includes a hub, multiple metal blades, and at least one ring. The metal blades are disposed surrounding the hub. The metal blades include multiple radial dimensions, and the structure of the metal blade with a shorter radial dimension is a part of the structure of the metal blade with a longer radial dimension. The metal blades having different radial dimensions form at least two ring areas, and the distribution numbers of the metal blades in the at least two ring areas are different from each other. The ring surrounds the hub and connects the metal blades.

Abstract: A projection device includes a shell, a lens, two first ribs, two second ribs, and a sliding cover. The shell has a top plate, a left sidewall, and a right sidewall, the top plate is respectively connected to the left sidewall and the right sidewall, and the top plate has an opening. The lens is disposed in the shell and exposed by the opening. The two first ribs are disposed on the top plate, extending directions of the two first ribs are perpendicular to the left sidewall and the right sidewall, and the opening is disposed between the two first ribs. The sliding cover is slidably disposed on the shell for covering the opening. The two second ribs are disposed on a top cover body of the sliding cover, and one of the two second ribs is located between the two first ribs.

Abstract: An ultra-short focus projection lens is configured to receive an image beam from an image source side and project the image beam toward a projection surface. The ultra-short focus projection lens has an optical axis. The ultra-short focus projection lens includes a reflective optical element, a first lens group, a stop, and a second lens group arranged in sequence along the optical axis. The image beam from the image source side passes through the second lens group, the stop, and the first lens group in sequence, and is reflected by the reflective optical element and projected to the projection surface. The first lens group includes a plurality of lenses having diopters. The second lens group 10 includes a plurality of lenses having diopters. The first lens group and the second lens group include ten lenses having diopters in total. A projection device is also provided.

Abstract: An image lens assembly includes, in order from an object side to an image side along an optical path, a first lens group, a second lens group, a third lens group and a fourth lens group. A total number of lens elements in the image lens assembly is seven. The first lens group includes a first lens element with positive refractive power and a second lens element with negative refractive power. Each of the second lens group and the third lens group includes at least one lens element. The fourth lens group includes a seventh lens element. When the image lens assembly is focusing or zooming, a relative position between the first lens group and an image surface is fixed, a relative position between the fourth lens group and the image surface is fixed, and the second lens group and the third lens group move along the optical axis.

Abstract: A centrifugal heat dissipation fan including a housing and an impeller is provided. The housing has at least one inlet disposed along an axis and at least one first outlet and a second outlet located in different radial directions, wherein the first outlet and the second outlet are opposite to and separated from each other. The impeller is disposed in the housing along the axis. A heat dissipation system of an electronic device is also provided.

Abstract: A memory device includes a source element, a drain element, channel layers, control electrode layers, and a memory layer. The channel layers are individually electrically connected between the source element and the drain element. Memory cells are defined in the memory layer between the control electrode layers and the channel layers.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: There is provided an array of light emitting elements integrated with meta-surfaces. The meta-surfaces are constructed from a semiconductor alloy comprising at least two different semiconductors. The composition of the semiconductor can be varied so as to provide different refractive indices. A method of manufacture of such an array is also provided.

Abstract: A biomass treatment method includes steps as follows. A biomass and sodium percarbonate are provided, wherein the biomass includes hemicellulose, cellulose and/or lignin. The biomass and the sodium percarbonate are mixed.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.