Patents by Inventor Wei W. Wang
Wei W. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8980045Abstract: A consumable ceramic liner can be used for connecting a gas outlet channel of a remote chamber to a gas inlet channel of a substrate cleaning chamber. The ceramic liner comprises an inlet cylinder having an outer diameter sized to fit in the gas outlet channel of the remote chamber, and an outlet cylinder connected to the gas inlet channel of the substrate cleaning chamber. A conical flare joins the inlet cylinder to the outlet cylinder.Type: GrantFiled: May 17, 2011Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Martin Riker, Wei W. Wang
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Patent number: 8846163Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: GrantFiled: June 5, 2012Date of Patent: September 30, 2014Assignee: Applied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Publication number: 20140269826Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.Type: ApplicationFiled: February 25, 2014Publication date: September 18, 2014Inventors: Hanbing WU, Anantha K. SUBRAMANI, Wei W. WANG, Aaron Muir HUNTER
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Publication number: 20140076234Abstract: A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.Type: ApplicationFiled: October 18, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh KAO, Jing-Pei Connie CHOU, Chiukin (Steven) LAI, Salvador P. UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Patent number: 8637410Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.Type: GrantFiled: April 8, 2011Date of Patent: January 28, 2014Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, John C. Forster, Seshadri Ganguli, Michael S. Jackson, Xinliang Lu, Wei W. Wang, Xinyu Fu, Yu Lei
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Publication number: 20130330920Abstract: A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material.Type: ApplicationFiled: June 6, 2012Publication date: December 12, 2013Applicant: Applied Materials, Inc.Inventors: Guojun Liu, Xianmin Tang, Anantha Subramani, Wei W. Wang
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Publication number: 20130256126Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.Type: ApplicationFiled: March 30, 2012Publication date: October 3, 2013Applicant: APPLIED MATERIALS, INC.Inventors: ALAN RITCHIE, DONNY YOUNG, WEI W. WANG, ANANTHKRISHNA JUPUDI, THANH X. NGUYEN, KIRANKUMAR SAVANDAIAH
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Publication number: 20120258602Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.Type: ApplicationFiled: April 8, 2011Publication date: October 11, 2012Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, John C. Forster, Seshadri Ganguli, Michael S. Jackson, Xinliang Lu, Wei W. Wang, Xinyu Fu, Yu Lei
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Publication number: 20120244704Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: Chien-Teh KAO, Jing-Pei(Connie) CHOU, Chiukin(Steven) LAI, Sal UMOTOY, Joel M. HUSTON, Son TRINH, Mei CHANG, Xiaoxiong (John) YUAN, Yu CHANG, Xinliang LU, Wei W. WANG, See-Eng PHAN
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Publication number: 20110232845Abstract: A consumable ceramic liner can be used for connecting a gas outlet channel of a remote chamber to a gas inlet channel of a substrate cleaning chamber. The ceramic liner comprises an inlet cylinder having an outer diameter sized to fit in the gas outlet channel of the remote chamber, and an outlet cylinder connected to the gas inlet channel of the substrate cleaning chamber. A conical flare joins the inlet cylinder to the outlet cylinder.Type: ApplicationFiled: May 17, 2011Publication date: September 29, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Martin RIKER, Wei W. WANG
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Publication number: 20110223755Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Inventors: CHIEN-TEH KAO, Jing-Pei(Connie) Chou, Chiukin(Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 7942969Abstract: A substrate cleaning chamber comprises various components, such as for example, a consumable ceramic liner, substrate heating pedestal, and process kit. The consumable ceramic liner is provided for connecting a gas outlet channel of a remote gas energizer to a gas inlet channel of a substrate cleaning chamber. The substrate heating pedestal comprises an annular plate having a substrate receiving surface with a plurality of ceramic balls positioned in an array of recesses. A process kit comprises a top plate, top liner, gas distributor plate, bottom liner, and focus ring.Type: GrantFiled: September 19, 2007Date of Patent: May 17, 2011Assignee: Applied Materials, Inc.Inventors: Martin Riker, Wei W. Wang
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Patent number: 7907384Abstract: A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.Type: GrantFiled: December 4, 2008Date of Patent: March 15, 2011Assignee: Applied Materials, Inc.Inventors: Karl Brown, Semyon Sherstinsky, Wei W. Wang, Cheng-Hsiung Tsai, Vineet Mehta, Allen Lau, Steve Sansoni
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Patent number: 7804040Abstract: A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal.Type: GrantFiled: May 22, 2006Date of Patent: September 28, 2010Assignee: Applied Materials, Inc.Inventors: Karl M. Brown, Semyon Sherstinksy, Vineet H. Mehta, Wei W. Wang, John A. Pipitone, Kurt J. Ahmann, Armando Valverde, Jr.
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Patent number: 7767024Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.Type: GrantFiled: June 6, 2008Date of Patent: August 3, 2010Assignee: Appplied Materials, Inc.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
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Patent number: 7697260Abstract: An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.Type: GrantFiled: March 31, 2004Date of Patent: April 13, 2010Assignee: Applied Materials, Inc.Inventors: Karl Brown, Nora Arellano, Semyon Sherstinsky, Allen Lau, Cheng-Hsiung Tsai, Vineet Mehta, Steve Sansoni, Wei W. Wang
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Patent number: 7658802Abstract: An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.Type: GrantFiled: November 22, 2005Date of Patent: February 9, 2010Assignee: Applied Materials, Inc.Inventors: Xinyu Fu, John Forster, Wei W. Wang
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Patent number: 7604708Abstract: A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.Type: GrantFiled: February 12, 2004Date of Patent: October 20, 2009Assignee: Applied Materials, Inc.Inventors: Bingxi Sun Wood, Mark N. Kawaguchi, James S. Papanu, Roderick C. Mosely, Chiukun Steven Lai, Chien-Teh Kao, Hua Ai, Wei W. Wang
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Publication number: 20090201622Abstract: A substrate support has an electrostatic chuck comprising an electrostatic puck with a dielectric covering an electrode capable of being charged to energize a process gas. The chuck has a frontside surface to receive a substrate and a base plate having an annular flange. A spring loaded heat transfer plate contacts the base plate, and has a fluid channel comprising first and second spiral channels. A pedestal is below the heat transfer plate.Type: ApplicationFiled: December 4, 2008Publication date: August 13, 2009Inventors: Karl Brown, Semyon Sherstinsky, Wei W. Wang, Cheng-Hsiung Tsai, Vineet Mehta, Allen Lau, Steve Sansoni
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Publication number: 20090111280Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.Type: ApplicationFiled: December 4, 2008Publication date: April 30, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan