Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.

Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.

Abstract: Disclosed herein are related to various embodiments of a reconfigurable transducer assembly and a method of operating the same. The transducer assembly includes a transducer and an electrical circuit coupled to the transducer. The transducer generates an electrical signal electrically representing a sensed result sensed by the transducer. The electrical circuit performs signal processing (e.g., sampling, amplification, filtering, etc.) on the electrical signal to obtain an output signal according to a process setting specifying how to perform the signal processing.

Abstract: A plurality of sensors are coupled to a data transmission bus and a command line. A marker is transmitted across the command transmission line. The marker is sensed at each of the plurality of the sensors. At each of the plurality of sensors, data is transmitted over the data bus at a predetermined time from the marker. Each predetermined time for each of the plurality of sensors is different from the predetermined time at the other sensors. Data transmitted from each of the plurality of sensors does not interfere with data transmitted from others of the plurality of sensors.

Abstract: An interface is provided between a transducer and audio processing circuitry. The interface has a switching device coupled to the transducer. The interface also has a first signal path that is selectively coupled to transducer via the switching device and includes a first output, the first signal path being configured to selectively receive input signals from the transducer, and form a first output signal at the first output by amplifying the input signals to provide a first gain. The first output is coupled to the audio processing circuitry. A second signal path is provided that is selectively coupled to the transducer via the switching device and includes a second output. The second gain is selected to be substantially larger than the first gain. The switching device is configured to switch the input signal between the first signal path and the second signal path.

Abstract: An interface is provided between a transducer and audio processing circuitry. The interface has a switching device coupled to the transducer. The interface also has a first signal path that is selectively coupled to transducer via the switching device and includes a first output, the first signal path being configured to selectively receive input signals from the transducer, and form a first output signal at the first output by amplifying the input signals to provide a first gain. The first output is coupled to the audio processing circuitry. A second signal path is provided that is selectively coupled to the transducer via the switching device and includes a second output. The second gain is selected to be substantially larger than the first gain. The switching device is configured to switch the input signal between the first signal path and the second signal path.