Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: A safety power strip includes a power strip base and a control system. The power strip base has plural receptacle outlets connected with power terminals, and a power line jointed with plugs for connecting with power source. The control system is provided with thermal sensors to detect temperature change occurred in the power strip base and enable a speaker to sound out for warning in case of detecting unusual temperature changes.

Abstract: A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.

Abstract: A quasi-optical material treatment apparatus includes a first mirror and a second mirror. The first mirror is arched, and has a focal point in a chamber distance, and a coupling port to receive a high power microwave from an external microwave source that travels along the chamber distance to output a strong field microwave beam. The second mirror and the first mirror jointly form a quasi-optical action chamber and are movable relative to each other to adjust the total chamber distance between the two. A material to be treated may be moved through a focusing zone (about one wavelength of the strong field microwave beam) of the strong field microwave beam to be treated rapidly and evenly.