Patents by Inventor Wei-Yuan Lo

Wei-Yuan Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240143322
    Abstract: A software developer proxy tool accesses microservice applications for a software development project by connecting the developer proxy tool to a common port on a computer network. The tool implements software and hardware to register a plurality of the microservice applications on connection ports that connect to the developer proxy tool at an address for the common port. Data requests among the microservices are handled by the developer proxy tool via the common port. The tool sequentially queries selected microservice applications on the respective connection ports to determine availability for completing a request. The tool receives responses back from microservices and directs the responses back to the requesting program. Failed requests trigger use of remote or third party microservice applications that may be available over an internet connection.
    Type: Application
    Filed: October 28, 2022
    Publication date: May 2, 2024
    Inventors: Henry Spivey, Chun-Fu Chang, Wei-Yuan Lo
  • Patent number: 11929434
    Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.
    Type: Grant
    Filed: April 15, 2022
    Date of Patent: March 12, 2024
    Assignee: eMemory Technology Inc.
    Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang