Patents by Inventor Weichi Ting

Weichi Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating capacitor dielectric
    Patent number: 6350707
    Abstract: The present invention provides a method of fabricating capacitor dielectric layer. A bottom electrode covered by a native oxide layer on a chip is provided. The chip is disposed into a low pressure furnace. A mixture of dichlorosilane and ammonia is introduced into the low pressure furnace to form a nitride layer on the native oxide layer. In the same low pressure furnace, nitrogen monoxide or nitric oxygen is infused to form an oxynitride layer on the nitride layer.
    Type: Grant
    Filed: September 3, 1999
    Date of Patent: February 26, 2002
    Assignee: United Microelectronics Corp.
    Inventors: Tse-Wei Liu, Jumn-Min Fan, Weichi Ting
  • Injector
    Publication number: 20010052556
    Abstract: The invention provides an injector. A first nozzle on top of the injector is provided, and a plurality of second nozzles on the injector sidewall is provided. An inner diameter of each second nozzle is gradually decreased from top to bottom on the injector sidewall.
    Type: Application
    Filed: April 5, 2001
    Publication date: December 20, 2001
    Inventors: Weichi Ting, Lihwoei Chen, Chin-Chuan Chung, Vince Chen
  • Method for fabricating a gate eletrode
    Patent number: 6214705
    Abstract: A manufacturing method of a gate electrode is described. A plurality of undoped amorphous silicon layers and a plurality of doped amorphous silicon layers are alternately formed on a substrate.
    Type: Grant
    Filed: January 25, 1999
    Date of Patent: April 10, 2001
    Assignee: United Microelectronics Corp.
    Inventor: Weichi Ting