Abstract: Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, first semiconductor structures are formed. At least one of the first semiconductor structures includes a processor, static random-access memory (SRAM) cells, and a first bonding layer comprising first bonding contacts. Second semiconductor structures are formed. At least one of the second semiconductor structures comprises dynamic random-access memory (DRAM) cells and a second bonding layer comprising second bonding contacts. The first semiconductor structures and the second semiconductor structures are bonded. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure. At least one of the first semiconductor structures and the second semiconductor structures further includes a peripheral circuit.

Abstract: A mapping method for right-turn conflict warning lines at urban road intersections includes: obtaining the conflict data of urban intersections and the driving trajectory information of large vehicles and obtaining the outermost rear wheel trajectory curve and the innermost rear wheel trajectory curve through the driving trajectory information of large vehicles; using the regression model to construct the dynamic model of the right-turn conflict area of large vehicles and obtain the relationship between the parameters of the outermost rear wheel trajectory curve and the innermost rear wheel trajectory curve and the dynamic and static indexes; inputting the dynamic and static indexes of other road intersections into the dynamic model of the right-turn conflict area of large vehicles to obtain the corresponding outermost rear wheel trajectory curve and the innermost rear wheel trajectory curve, and drawing the urban road warning line.

Abstract: A semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes an n-type semiconductor layer, a functional layer, a p-type semiconductor layer, a first AlN layer and a first heavily doped n-type semiconductor layer arranged in sequence. The first AlN layer is provided to reduce the diffusion of p-type ions from the p-type semiconductor layer into the first heavily doped n-type semiconductor layer, to avoid a thicker tunneling junction caused by n-type ions/p-type ions co-doping, to improve the tunneling effect of carriers, to enhance the uniformity of the current density distribution of the first heavily doped n-type semiconductor layer injected into the p-type semiconductor layer, to solve the problem that the p-type semiconductor layer has low carrier mobility and high resistivity.

Abstract: Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. First semiconductor structures are formed on a first wafer. At least one first semiconductor structure includes a programmable logic device, an array of SRAM cells, and a first bonding layer including first bonding contacts. Second semiconductor structures are formed on a second wafer. At least one second semiconductor structure includes an array of DRAM cells and a second bonding layer including second bonding contacts. The first wafer and the second wafer are bonded in a face-to-face manner, such that the at least one of the first semiconductor structures is bonded to the at least one of the second semiconductor structures. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure at a bonding interface. The bonded first and second wafers are diced into dies.

Abstract: In certain aspects, a semiconductor device includes a vertical transistor, a metal bit line, and a pad layer. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The metal bit line extends in a second direction perpendicular to the first direction and coupled to a terminal of the vertical transistor via an ohmic contact. The pad layer is positioned between the gate electrode and the metal bit line in the first direction. The gate dielectric and the pad layer have different dielectric materials.

Abstract: A semiconductor structure includes: a first semiconductor layer, a multiple quantum well layers formed on the first semiconductor layer, where the multiple quantum well layer includes a plurality of quantum barrier layers and a plurality of quantum well layers alternately arranged; an insertion layer formed on each of the plurality of quantum well layers; and a second semiconductor layer formed on the multiple quantum well layer; where a material of the insertion layer is a nitride containing a scandium component. In this application, the insertion layer, made of the nitride containing the scandium component, may repair deterioration problem of epitaxial quantum well materials. Moreover, a compressive stress on the quantum well layer located below is introduced, to achieve longer light-emitting wavelengths by using InGaN quantum well materials with a lower content of In component.

Abstract: Disclosed are a semiconductor device and a manufacturing method therefor. The semiconductor device includes an n-type layer, a multiple quantum well layer, and a p-type ion doping layer which are disposed in sequence. The p-type ion doping layer includes an activation region and a passivation region, and the activation region is an oxygen doping region. By selectively activating the p-type ion doping layer, a passivation region at an edge of a light-emitting unit and a passivation region under the first electrode are formed, so that uniformity of luminous exitance of a device may be improved, and current crosstalk in the p-type layer may be avoided without etching and filling insulating medium or cutting isolation channels between the light-emitting units, thereby simplifying a manufacturing process of the device, and achieving a more uniform luminous exitance and higher light extraction rate of the semiconductor device.

Abstract: A semiconductor structure includes a substrate, a first semiconductor layer, a second semiconductor layer and a p-type ion doping layer sequentially disposed, the p-type ion doping layer includes an activation region and a passivation region enclosing the activation region, and the activation region is an oxygen-doped region. Hydrogen doped in the p-type ion doping layer can be replaced by low-temperature annealing after a process of implementing oxygen ion-implantation, so as to improve activation efficiency of the p-type ion doping layer; the activation region in a gate electrode region and the passivation region in an non-gate electrode region are formed by using a method for selectively activating the p-type ion doping layer, avoiding etching of the p-type ion doping layer, and thus avoiding etching losses; and a plurality of patterned activation regions are obtained by selectively activating on a same substrate, which facilitates batch preparation of enhancement mode semiconductor devices.

Abstract: A foam production method includes mixing liquid nitrogen with a foaming material to produce foam. A gas is produced in situ from liquid nitrogen. As the ratio of the volume of the gas produced by gasification of liquid nitrogen to the volume of the liquid nitrogen is relatively high, when a large gas supply flow is needed to generate a large foam flow, a liquid nitrogen storage device of a small volume can be used instead of bulky air supply devices such as high-pressure gas cylinders, air compressors, air compressor sets and the like, reducing the volume of the air supply device. In addition, the liquid nitrogen used in foaming will release nitrogen gas after the foam blast, such that the nitrogen is also able to inhibit combustion on the surface of burning materials, accelerating the extinguishing of the fire.

Abstract: Disclosed in the present disclosure is an information-based intelligent quality traceability system for fresh milk, which includes a database module configured to store information of the system, a data encryption module configured to encrypt obtained information, an enterprise information module, a raw material information module, a first measurement module, a destruction information module, a transportation information module, a second measurement module, a processing information module, and a delivery information module. Each information module obtains information, a data decryption module is configured to decrypt obtained information, a vehicle condition analysis module is configured to analyze a relation between a vehicle running condition and product quality, and a data analysis module is configured to analyze the data of the system.

Abstract: A device and a method for nondestructively detecting a transient characteristic of a conductive screw of a turbo-generator rotor are provided. The device includes a personal computer (PC), an extremely-steep pulse generator, an ultra-high-frequency double-isolation transformer, and a pulse emitting and coupling module, which are connected in sequence. The pulse emitting and coupling module is connected to a load. A synchronous pulse receiving non-inductive divider circuit synchronously receives a characteristic waveform from the load, and the synchronous pulse receiving non-inductive divider circuit is connected to an ultra-high-speed analog/digital (A/D) module through a nonlinear saturation amplifying circuit that amplifies a signal. The PC receives a signal from the ultra-high-speed A/D module. The load includes a positive or negative excitation lead loop that is in a 180° symmetrical and instantaneous short-circuit state and a rotor shaft.

Abstract: Some aspects of the disclosure provide a method for camera operation control in an electronic device. The method includes obtaining, based on a plurality of frames associated with a target time slice, a first target parameter to be met by a camera of a virtual camera system in the target time slice. Then, the method includes determining a target operation speed of the camera in the target time slice at least partially based on the first target parameter and a time-speed change magnification curve, and controlling the camera to operate based on the target operation speed. Apparatus and non-transitory computer-readable storage medium counterpart embodiments are also contemplated.

Abstract: Disclosed is a semiconductor structure. The semiconductor structure includes: a multiple quantum well layer including a quantum barrier layer and a quantum well layer which are alternately arranged; and a protective layer formed on the quantum well layer, where the protective layer is made of an oxygen-doped nitride material. In the present disclosure, the presence of the oxygen-doped protective layer may achieve a longer luminous wavelengths through an InGaN quantum well material with a lower In component.

Abstract: A method for preventing a turnout conflict of a railway is applicable to a railway controller and includes: receiving a first request from a first train and a second request from a second train for using a turnout within a time period; determining whether a first distance between a current position of the first train and the turnout is equal to a second distance between a current position of the second train and the turnout; and in response to determining that the first distance is equal to the second distance, determining a priority user based on first arrival information of the first train and second arrival information of the second train, where the arrival information includes whether the train arrives at a next parking station on schedule, ahead of schedule, or behind schedule when running at a maximum running speed.

Abstract: The present disclosure provides a combined vaccine against human respiratory syncytial virus (RSV) infection and a method thereof for inducing immune response. The combined vaccine includes; a first composition including an immunologically effective dosage of a replication-deficient human adenovirus type 26 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector; and a second composition including an immunologically effective dosage of a replication-deficient chimpanzee adenovirus type 63 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector. The first composition is a primary immunization composition and the second composition is a booster immunization composition, or vice versa. In the present disclosure, the combined vaccine is used for inducing a protective immunity against RSV infection, and a method is provided for generating the protective immunity against RSV infection.

Abstract: The present disclosure discloses an electronic cigarette, a battery thereof is connected to an atomizing device through a first power supply circuit, the battery is connected to a first detecting device through a second power supply circuit, and first information detected by the first detecting device is used to indicate whether the electronic cigarette is in a suction state. The electronic cigarette further comprises a switching key, an on-off key, a second detecting device and an MCU, the on-off key is configured for controlling the first power supply circuit to be ON and OFF, and the second information detected by the second detecting device is used to indicate the position of the switching key; the MCU controls the second power supply circuit to be ON and OFF according to the second information.

Abstract: An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stacked, a surface of the quantum well layer away from the first semiconductor layer has a first roughness, a surface of the barrier layer away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness.

Abstract: A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.

Abstract: According to one aspect, a vehicle includes a chassis, a propulsion system carried on the chassis and configured to propel the vehicle; a control system supported by the chassis, at least one compartment supported by the chassis, and at least one configurable divider arrangement contained within the at least one compartment. The control system is configured to enable the vehicle to operate autonomously. The at least one configurable divider arrangement is arranged to define at least a first location, wherein the at least one configurable divider arrangement includes a sensor system and a notification system, the sensor system being arranged to detect a presence of an item at the first location, the notification system being arranged to provide an indication relating to the first location.

Abstract: A multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) and a manufacturing method therefor. The multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) comprises: a first semiconductor layer (11), a stress release layer (12) having a V-shaped pit (12a), a first quantum well layer (131) and a second quantum well layer (132), which are stacked, from bottom to top, on a side wall of the V-shaped pit (12a) and a top wall of the stress release layer (12), and a second semiconductor layer (14) that is located on the second quantum well layer (132), wherein the conduction type of the second semiconductor layer (14) is the opposite of that of the first semiconductor layer (11).