Patents by Inventor Wei-Ming Liao
Wei-Ming Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12000455Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.Type: GrantFiled: March 10, 2022Date of Patent: June 4, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi Chen Ho, Chih Ping Liao, Chien Ting Lin, Jie-Ying Yang, Wei-Ming Wang, Ker-Hsun Liao, Chi-Hsun Lin
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Patent number: 11998776Abstract: A rope based fall protection device including a rotation unit, a brake unit, and a rope. A first end of the rope is connected to the rotation unit. The rope includes a first rope loop and a second rope loop that are wound around the rotation unit. A first retaining portion of a retaining ring is sleeved on the first rope loop and a second retaining portion thereof is sleeved on the second rope loop, such that the rope forms a rope section which has a fixed length between the second retaining portion and the first end and is wound around the rotation unit. When a free end of the rope is pulled by an external force to release the rope wound around the rotation unit in a direction away from the rotation unit, the retaining ring is broken to release the rope section of the rope. The external force is greater than or equal to a pulling force generated by a user's free fall.Type: GrantFiled: September 11, 2019Date of Patent: June 4, 2024Assignee: YOKE INDUSTRIAL CORP.Inventors: Wen-Ming Liao, Wei-Chih Chen
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Publication number: 20240141922Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Applicant: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
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Publication number: 20240138098Abstract: A centrifugal heat dissipation fan of a portable electronic device. The centrifugal heat dissipation fan includes a hub, multiple metal blades, and at least one ring. The metal blades are disposed surrounding the hub. The metal blades include multiple radial dimensions, and the structure of the metal blade with a shorter radial dimension is a part of the structure of the metal blade with a longer radial dimension. The metal blades having different radial dimensions form at least two ring areas, and the distribution numbers of the metal blades in the at least two ring areas are different from each other. The ring surrounds the hub and connects the metal blades.Type: ApplicationFiled: October 12, 2023Publication date: April 25, 2024Applicant: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Kuang-Hua Lin, Wei-Chin Chen, Yu-Ming Lin
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Patent number: 11968800Abstract: A centrifugal heat dissipation fan including a housing and an impeller is provided. The housing has at least one inlet disposed along an axis and at least one first outlet and a second outlet located in different radial directions, wherein the first outlet and the second outlet are opposite to and separated from each other. The impeller is disposed in the housing along the axis. A heat dissipation system of an electronic device is also provided.Type: GrantFiled: May 23, 2023Date of Patent: April 23, 2024Assignee: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Kuang-Hua Lin, Sheng-Yan Chen
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Patent number: 11950491Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.Type: GrantFiled: November 17, 2020Date of Patent: April 2, 2024Assignee: RAYNERGY TEK INCORPORATIONInventors: Yi-Ming Chang, Chuang-Yi Liao, Wei-Long Li, Yu-Tang Hsiao, Chun-Chieh Lee, Chia-Hua Li, Huei-Shuan Tan
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Patent number: 11935780Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.Type: GrantFiled: November 11, 2021Date of Patent: March 19, 2024Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Chuan-Lin Hsiao, Wei-Ming Liao
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Patent number: 11913472Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.Type: GrantFiled: April 6, 2021Date of Patent: February 27, 2024Assignee: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
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Publication number: 20240047265Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.Type: ApplicationFiled: October 11, 2023Publication date: February 8, 2024Inventors: Chuan-Lin HSIAO, Wei-Ming LIAO
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Patent number: 11659707Abstract: A method of manufacturing a semiconductor structure includes providing a substrate having an active region surrounded by an isolation layer; forming a first trench and a second trench in the active region, and a third trench and a fourth trench in the isolation layer; forming a bottom work-function layer in the third trench and the fourth trench, respectively; forming a middle work-function layer on the bottom work-function layer and in the first and the second trenches; forming a top work-function layer on the middle work-function layer; and forming a capping layer on the top work-function layer that fills a remaining region of the first, the second, the third and the fourth trenches.Type: GrantFiled: March 22, 2022Date of Patent: May 23, 2023Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Ching-Chia Huang, Wei-Ming Liao
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Publication number: 20230141995Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.Type: ApplicationFiled: November 11, 2021Publication date: May 11, 2023Inventors: Chuan-Lin HSIAO, Wei-Ming LIAO
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Patent number: 11582844Abstract: The invention provides a detection circuit for detecting light-off modes performed by a silicon-controlled dimmer which comprises a voltage detection circuit receiving an output signal and generating a voltage detection signal according to the output signal, and a delay circuit connected to the voltage detection circuit, receiving the voltage detection signal, and delaying the voltage detection signal in order to output a detection signal. The invention detects the output signal through the voltage detection circuit, and delays the detected voltage detection signal to output the corresponding detection signal, and then the detection signal effectively distinguishes the light-off modes performed by the silicon-controlled dimmer to meet requirements of users.Type: GrantFiled: July 23, 2020Date of Patent: February 14, 2023Assignee: SHANGHAI SILICON DRIVER SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Yue Zheng, Wei-Ming Liao, Xiao-Bo Hu
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Patent number: 11570861Abstract: The invention provides an LED drive power supply and a controller thereof. The controller comprises a ground terminal, a sampling terminal, and a power supply terminal. The ground terminal and an output ground of a power supply module have different potentials. A drain of a power switching transistor is coupled to a positive output terminal of the power supply module, a source of the power switching transistor and the sampling terminal are coupled to a first terminal of a sampling resistor, and a second terminal of the sampling resistor is coupled to the ground terminal. The controller further includes a logic control circuit determining whether a sampling voltage input by the sampling terminal is zero; a driver generating a first driving signal to the power switching transistor; and a bias circuit configured to receive a power supply voltage.Type: GrantFiled: March 16, 2021Date of Patent: January 31, 2023Assignee: SHANGHAI SILICON DRIVER SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Yue Zheng, Wei-Ming Liao, Xiao-Bo Hu
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Patent number: 11488964Abstract: A method of manufacturing a semiconductor structure includes: receiving a substrate having an active region and a non-active region adjacent to the active region; forming an etch stop layer over the non-active region of the substrate, in which the etch stop layer is oxide-free; forming an isolation over the etch stop layer; removing a portion of the active region and a portion of the isolation to form a first trench in the active region and a second trench over the etch stop layer, respectively, in which a thickness of the etch stop layer beneath the second trench is greater than a depth difference between the first trench and the second trench; forming a dielectric layer in the first trench; and filling a conductive material on the dielectric layer in the first trench and in the second trench. A semiconductor structure is also provided.Type: GrantFiled: July 9, 2021Date of Patent: November 1, 2022Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Ching-Chia Huang, Wei-Ming Liao
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Patent number: 11482419Abstract: The present disclosure provides a transistor device and a method for preparing the same. The transistor device includes an isolation structure disposed in a substrate, an active region disposed in the substrate and surrounded by the isolation structure, a first upper gate disposed over the active region and a portion of the isolation structure, a source/drain disposed at two sides of the gate, and a pair of first lower gates disposed under the first upper gate and isolated from the active region by the isolation structure. In some embodiments, the pair of first lower gates extend in a first direction, the first upper gate extends in a second direction, and the first direction and the second direction are different.Type: GrantFiled: November 30, 2020Date of Patent: October 25, 2022Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Jhen-Yu Tsai, Tseng-Fu Lu, Wei-Ming Liao
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Publication number: 20220216213Abstract: A method of manufacturing a semiconductor structure includes providing a substrate having an active region surrounded by an isolation layer; forming a first trench and a second trench in the active region, and a third trench and a fourth trench in the isolation layer; forming a bottom work-function layer in the third trench and the fourth trench, respectively; forming a middle work-function layer on the bottom work-function layer and in the first and the second trenches; forming a top work-function layer on the middle work-function layer; and forming a capping layer on the top work-function layer that fills a remaining region of the first, the second, the third and the fourth trenches.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Inventors: Ching-Chia HUANG, Wei-Ming LIAO
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Patent number: 11315930Abstract: A semiconductor structure includes a substrate, a first word line structure, a second word line structure, a third word line structure, and a fourth word line structure. The substrate has an active region surrounded by an isolation structure. The first and second word line structures are disposed in the active region and separated from each other. The third and fourth word line structures are disposed in the isolation structure, and each of the third and the fourth word line structures includes a bottom work-function layer, a middle work-function layer on the bottom work-function layer, and a top work function layer on the work-function middle layer. The middle work-function layer has a work-function that is higher than a work-function of the top work-function layer and a work-function of the bottom work-function layer.Type: GrantFiled: February 14, 2020Date of Patent: April 26, 2022Assignee: NANYA TECHNOLOGY CORPORATIONInventors: Ching-Chia Huang, Wei-Ming Liao
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Publication number: 20210335794Abstract: A method of manufacturing a semiconductor structure includes: receiving a substrate having an active region and a non-active region adjacent to the active region; forming an etch stop layer over the non-active region of the substrate, in which the etch stop layer is oxide-free; forming an isolation over the etch stop layer; removing a portion of the active region and a portion of the isolation to form a first trench in the active region and a second trench over the etch stop layer, respectively, in which a thickness of the etch stop layer beneath the second trench is greater than a depth difference between the first trench and the second trench; forming a dielectric layer in the first trench; and filling a conductive material on the dielectric layer in the first trench and in the second trench. A semiconductor structure is also provided.Type: ApplicationFiled: July 9, 2021Publication date: October 28, 2021Inventors: Ching-Chia HUANG, Wei-Ming LIAO
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Publication number: 20210298142Abstract: The invention provides an LED drive power supply and a controller thereof. The controller comprises a ground terminal, a sampling terminal, and a power supply terminal. The ground terminal and an output ground of a power supply module have different potentials. A drain of a power switching transistor is coupled to a positive output terminal of the power supply module, a source of the power switching transistor and the sampling terminal are coupled to a first terminal of a sampling resistor, and a second terminal of the sampling resistor is coupled to the ground terminal. The controller further includes a logic control circuit determining whether a sampling voltage input by the sampling terminal is zero; a driver generating a first driving signal to the power switching transistor; and a bias circuit configured to receive a power supply voltage.Type: ApplicationFiled: March 16, 2021Publication date: September 23, 2021Inventors: Yue ZHENG, Wei-Ming LIAO, Xiao-Bo HU
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Patent number: D1023729Type: GrantFiled: October 29, 2020Date of Patent: April 23, 2024Assignee: YOKE INDUSTRIAL CORP.Inventors: Wei-Chieh Hung, Wen-Ming Liao, Tzu-Lun Weng