Patents by Inventor Weizuo Zhang

Weizuo Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting
    Patent number: 5844259
    Abstract: An MCT is formed as a four-layer device, using alternating cells of: (a) P diffusions in an N.sup.- wafer having lower N.sup.+ and P.sup.+ layers with N.sup.+ cathode regions in the P diffusions, and (b) shallow P.sup.+ diverter cells. A cathode electrode is connected to the N.sup.+ cathodes, but not to the P diffusions containing the N.sup.+ cathode regions. The alternating cells are arranged in checkerboard fashion with the cells of any given row having a narrow spacing to define a narrow turn-off channel and the rows being more widely spaced to define a conduction channel having a reduced inherent JFET resistance.
    Type: Grant
    Filed: March 19, 1996
    Date of Patent: December 1, 1998
    Assignee: International Rectifier Corporation
    Inventors: Daniel M. Kinzer, Weizuo Zhang