Patents by Inventor Wen-Cheng Chang

Wen-Cheng Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120084951
    Abstract: A positioning hook structure for a hand puller contains a base including a first and a second ends; a rotating member including a first segment axially connected with the second end and a second segment having a handle; a central shaft set being axially coupled with the first segment and the second end; two ratchets including teeth arranged therearound and fixed onto one end of the central shaft set; the base including a movable retaining member to abut against one of the teeth, the rotating member including a movable pulling rod to abut against another tooth of the ratchet; a positioning hook including a third and a fourth ends, the third end including two sides including two insertions, the fourth end including a hooking portion extending outward so that the positioning hook inserts to the holes of the base by using the insertions.
    Type: Application
    Filed: November 11, 2010
    Publication date: April 12, 2012
    Inventor: Wen Cheng Chang
  • Publication number: 20120073097
    Abstract: A ratchet buckle has a body and a trigger. One end of the body has two opposite pivotal holes, two opposite positioning notches, and a pivotal shaft penetrating the pivotal holes. Two ends of the pivotal shaft each have a ratchet wheel synchronously rotating with the pivotal shaft. One end of the trigger has two opposite shaft holes engaged to the pivotal shaft of the body and has a positioning rod transversally mounted on the trigger to engage the two positioning notches of the body. By operating the trigger to set the pivotal shaft free, the pivotal shaft is easily rotated to reel a strap.
    Type: Application
    Filed: September 27, 2010
    Publication date: March 29, 2012
    Inventor: Wen Cheng Chang
  • Publication number: 20120074363
    Abstract: A hand puller and a central shaft structure thereof contains a base including a first and a second sides having a fixed pillar with a fixed rope and a controlling portion with an axial hole respectively, and including a removable retaining member; a pulling member including a first and a second segments having an axial connecting portion with an axial bore and a holding portion individually, and including a movable rod; two ratchets, each including plural teeth and an orifice to match with the central shafts; wherein the retaining member and the movable rod contact with the ratchet respectively, the central shaft is solid, made of a metal bar material, and includes two ends between which an outer surface is defined, and each end of the central shaft includes a limiting member higher than the outer surface so that the base and the ratchets are positioned on the central shafts.
    Type: Application
    Filed: September 27, 2010
    Publication date: March 29, 2012
    Inventor: Wen Cheng Chang
  • Publication number: 20110061213
    Abstract: A hand puller with the structure of double stopping plates is disclosed. An axle part goes through a fixing part and a pulling part. Both ends of the axle part have a ratchet, respectively. The fixing part has two stopping plates, fixed to the two opposite sides of the axle part. The pulling part has a driving claw. The driving claw and the stopping plates of the fixing part engage with the ratchet.
    Type: Application
    Filed: September 14, 2009
    Publication date: March 17, 2011
    Applicant: WIN CHANCE METAL CO., LTD.
    Inventor: Wen-Cheng Chang
  • Patent number: 7651072
    Abstract: A cable tightening device includes a fixed unit including a base, a rotation member rotatably mounted on a first end of the base, a movable unit including a movable member rotatably mounted on the rotation member and movable relative to the base, and a holding member secured on a second end of the base. Thus, the base of the fixed unit is integrally combined with the holding member without having to provide a bolt and a nut, thereby decreasing the costs of fabrication. In addition, the holding member is integrally combined with the base of the fixed unit by punching so that the holding member will not detach from the base of the fixed unit, thereby facilitating operation of the cable tightening device.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: January 26, 2010
    Inventor: Wen-Cheng Chang
  • Patent number: 7448596
    Abstract: A cable tightening device includes a fixed unit, a rotation member rotatably mounted on the fixed unit, a movable unit including a movable member to drive the rotation member and a release member to lock or unlock the movable member, and a locking unit to lock the release member onto the movable member releasably. Thus, the release member is locked onto the movable member by the locking unit and cannot be pulled upwardly to detach the push plates of the movable unit from the ratchet wheels of the fixed unit so that the ratchet wheels are locked to lock the rotation member to prevent the cable from being loosened so as to protect the cargo wound by the cable, thereby achieving the anti-theft purpose.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: November 11, 2008
    Inventor: Wen-Cheng Chang
  • Patent number: 7100898
    Abstract: A lifting jack includes a lifting mechanism pivoted to a base and a support bracket member so as to lift or lower the support bracket member relative to the base, a driving shaft journalled on a right link pin to be rotated so as to move a left link pin relative to the right link pin, a reflecting member hinged to the base so as to enable the reflecting member to be displaced from a folded position to an unfolded position and to be disposed to reflect images of an object lifted by the support bracket member. Preferably, a lighting device is disposed to illuminate a desired area of the object. Two limit switches are disposed to prevent excess movement of the bracket support member.
    Type: Grant
    Filed: October 11, 2005
    Date of Patent: September 5, 2006
    Inventor: Wen-Cheng Chang
  • Publication number: 20040128318
    Abstract: A part number request processing system and method is provided which allows a part number requester to efficiently obtain the verification of the part quality. The system resides in a server having a part specification database for storing a plurality of part specification label having part information and corresponding supplier information and a part test database for storing a plurality of part test records having part information and corresponding part test information. When the server receives a request, it extracts the part number specification information and test results to verify if the parts requested meet the standard, if not met, the supplier is assessed; oppositely, if met the purchase request is sent to the supplier. After delivery of the parts, test information is entered into the server via a network system to update the part specification information and part test information to provide the verification of the part purchase request.
    Type: Application
    Filed: March 24, 2003
    Publication date: July 1, 2004
    Applicant: Inventec Corporation
    Inventors: Chin-Huan Peng, Li-Chuan Yu, Li-Ying Huang, Wen-Cheng Chang, Yo-Huang Chang, Chien-Yi Yang
  • Publication number: 20040073326
    Abstract: A method and a system for managing engineer-modified trial operation are provided, for use in an enterprise to perform automatic integration planning for engineer-modified related processes. By computer information management technology and network technology, an online trial operation procedure is executed for a confirmed engineer-modified project. This procedure involves material planning and uploading trial data to a quality control department after the trial is completed to produce a trial operation test report that is directed to associated departments. Compared to the prior art, the integration planning conducted by the proposed system allows employees of the enterprise to more easily access and manage data in real time, thereby improving operational efficiency of the enterprise.
    Type: Application
    Filed: March 7, 2003
    Publication date: April 15, 2004
    Inventors: Weng-Chang Chang, Wen-Cheng Chang, Chien-Ming Tseng, Chih-Chen Chen
  • Publication number: 20020114904
    Abstract: A ceramic sculpture for storing and releasing fragrance is provided which includes a bowl-like body of the ceramic sculpture with an indentation at the bottom with a vapor permeation barrier on the surface of the indentation; a unglazed ceramic base embedded into the indentation of the bowl-like body of the ceramic sculpture; and a fragrant substance placed in the indentation and the base, while fragrance is absorbed and released from the surface of the base. A method of making the ceramic sculpture for storing and releasing fragrance is also provided.
    Type: Application
    Filed: December 20, 2000
    Publication date: August 22, 2002
    Inventor: Wen-Cheng Chang
  • Patent number: 6352599
    Abstract: Magnetic nanocomposite materials including iron, rare earth elements, boron, refractory metals and cobalt which have favorable magnetic properties and are suitable for making bonded magnets are disclosed. Compositions of the present invention can be of the formula: (N1−yLay)vFe100−v−w−x−zCowMzBx, where M is at least one refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W; v is from about 5 to about 15; w is greater than or equal to 5; x is from about 9 to about 30; y is from about 0.05 to about 0.5; and z is from about 0.1 to about 5. Preferably M is at least Cr. These materials have good magnetic properties and are suitable for use in preparing bonded magnets.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: March 5, 2002
    Assignee: Santoku Corporation
    Inventors: Wen Cheng Chang, Bao-Min Ma, Qun Chen, Charles O. Bounds
  • Patent number: 6332933
    Abstract: Magnetic nanocomposite materials including iron, rare earth elements, boron, refractory metal and, optionally, cobalt are disclosed. Neodymium and lanthanum are preferred rare earth elements. The amounts of Nd, La, B and refractory metal are controlled in order to produce both hard and soft magnetic phases, as well as a refractory metal boride precipitated phase. The refractory metal boride precipitates serve as grain refiners and substantially improve the magnetic properties of the nanocomposite materials. The materials are particularly suitable for making bonded magnets.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: December 25, 2001
    Assignee: Santoku Corporation
    Inventors: Bao-Min Ma, Charles O. Bounds, Wen Cheng Chang, Qun Chen
  • Patent number: 6313516
    Abstract: A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectrode dielectric. A doped polysilicon layer and an undoped polysilicon layer are deposited and patterned to form the resistor. The doped polysilicon layer is in-situ doped to minimize the temperature and voltage coefficients of resistivity. Since the undoped polysilicon layer has a very high resistance (infinite), the resistance is predominantly determined by the doped polysilicon layer.
    Type: Grant
    Filed: March 13, 2000
    Date of Patent: November 6, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yu-Ming Tsui, Wen-Cheng Chang, Shung-Jen Yu
  • Patent number: 6147372
    Abstract: Device layouts are described which increase the photon current of a metal oxide semiconductor image sensor. The metal oxide semiconductor can be NMOS, PMOS, or CMOS. The key part of the photon current of the image sensors comes from the depletion region at the PN junction between the drain region and the substrate material. The layouts used significantly increase the area of this depletion region illuminated by a stream of photons. The layouts have a drain region which takes the shape of a number of parallel fingers perpendicular to the gate electrode, a number of parallel fingers parallel to the gate electrode, or a spiral. The drain regions of these layouts significantly increase the area of the drain depletion region illuminated by a stream of electrons.
    Type: Grant
    Filed: February 8, 1999
    Date of Patent: November 14, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Hua-Yu Yang, Chih-Heng Shen, Wen-Cheng Chang
  • Patent number: 6054359
    Abstract: A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectrode dielectric. A doped polysilicon layer and an undoped polysilicon layer are deposited and patterned to form the resistor. The doped polysilicon layer is in-situ doped to minimize the temperature and voltage coefficients of resistivity. Since the undoped polysilicon layer has a very high resistance (infinite), the resistance is predominantly determined by the doped polysilicon layer.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: April 25, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yu-Ming Tsui, Wen-Cheng Chang, Shung-Jen Yu, Sheng-Yih Ting
  • Patent number: 5904570
    Abstract: The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: May 18, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sen-Fu Chen, Bao-Ru Yang, Wen-Cheng Chang, Heng-Hsin Liu
  • Patent number: 5763316
    Abstract: A process for creating field oxide isolation for the micron and sub-micron devices in the high density integrated circuits has been developed. The junction leakage problem resulted from the trenches in the substrate formed after the removal of the silicon nitride mask, is avoided. The encroachment of the "bird's beak" into the small active device region is also minimized by this invention. These goals are accomplished by the addition of a polysilicon or amorphous silicon refill layer in the trenches after the removal of the silicon nitride oxidation mask in the isolation region, prior to field oxide oxidation process.
    Type: Grant
    Filed: February 19, 1997
    Date of Patent: June 9, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sen-Fu Chen, Bao-Ru Yang, Wen-Cheng Chang
  • Patent number: 5719087
    Abstract: A protective cap of dielectric material is deposited by plasma-enhanced chemical vapor deposition on the surface of electrical bonding pads of semiconductor integrated circuits prior to deposition of the final passivation layer. The protective cap serves to isolate the pad surface from electrochemical or other interaction with the etching solution used to open contact holes through the passivation layer. This prevents the formation of surface damage and residues on the pad which lead to yield and reliability problem with integrated circuits.
    Type: Grant
    Filed: March 7, 1996
    Date of Patent: February 17, 1998
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sen Fu Chen, Jie Shing Wu, Po-Tau Chu, Wen-Cheng Chang
  • Patent number: 5639342
    Abstract: A patterned silicon nitride layer formed over a semiconductor integrated circuit wafer having a layer of pad oxide is often used as a mask for subsequent processing steps. Etching of the silicon nitride layer is difficult to control and can create defects in the pad oxide layer which are difficult to detect before the manufacture of the semiconductor integrated circuit wafer is completed. A method is described using potassium hydroxide treatment and scanning electron microscope evaluation of a test wafer for detection of defects at the silicon nitride etching step. Continued processing of defective wafers can be terminated and the silicon nitride etching step can be controlled using this method.
    Type: Grant
    Filed: March 15, 1996
    Date of Patent: June 17, 1997
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Sen Fu Chen, Wen Cheng Chang, Heng Hsin Liu, Bao Ru Yang
  • Patent number: D657217
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: April 10, 2012
    Assignee: Win Chance Metal Co., Ltd.
    Inventor: Wen Cheng Chang