Abstract: Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide.

Abstract: Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

Abstract: A composition and method for removing a metal-containing layer or portion of a layer of a pellicle of an EUV mask are provided. The composition includes water; one or more oxidizing agents; and one or more acids. The method includes forming one or more layers over a silicon substrate with at least one of those layers includes a metal containing layer and removing the metal containing layer by contacting the metal containing layer with the composition of the disclosed and claimed subject matter.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.

Abstract: A circuit includes a primary transceiver, a secondary transceiver, and control logic. The primary transceiver communicates information via a primary communication link. The secondary transceiver communicates information via a secondary communication link. The control logic is operatively coupled to the primary and secondary transceivers. The control logic selectively powers down the primary transceiver based on primary communication link traffic trigger information and causes communication using the secondary transceiver instead of the primary transceiver based on the primary communication link traffic trigger information.

Abstract: A circuit includes a primary transceiver, a secondary transceiver, and control logic. The primary transceiver communicates information via a primary communication link. The secondary transceiver communicates information via a secondary communication link. The control logic is operatively coupled to the primary and secondary transceivers. The control logic selectively powers down the primary transceiver based on primary communication link traffic trigger information and causes communication using the secondary transceiver instead of the primary transceiver based on the primary communication link traffic trigger information.