Patents by Inventor Wen-Ching Cheng

Wen-Ching Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11949001
    Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
  • Publication number: 20240090230
    Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
  • Patent number: 11197794
    Abstract: The present invention discloses a turning air mattress, a turning air cell, and a control method for a turning air mattress. With structural arrangements of an upper portion and a lower portion of the turning air cell as well as inflation and deflation control, the turning air cell having an upper portion that is wider and a lower portion that is narrower can further assist a patient in body turning, enabling the patient to easily achieve a sufficient body turning angle, further reducing the risk of likeliness to pressure sores caused by the structure of the air mattress pressing against the body of the patient.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 14, 2021
    Assignee: APEX MEDICAL CORP.
    Inventors: Ming-Lung Chang, Ming-Heng Hsieh, Wen-Ching Cheng, Pi-Kai Lee, Yu-Chen Liu, Fang-Ju Chou
  • Publication number: 20200078241
    Abstract: The present invention discloses a turning air mattress, a turning air cell, and a control method for a turning air mattress. With structural arrangements of an upper portion and a lower portion of the turning air cell as well as inflation and deflation control, the turning air cell having an upper portion that is wider and a lower portion that is narrower can further assist a patient in body turning, enabling the patient to easily achieve a sufficient body turning angle, further reducing the risk of likeliness to pressure sores caused by the structure of the air mattress pressing against the body of the patient.
    Type: Application
    Filed: August 12, 2019
    Publication date: March 12, 2020
    Inventors: MING-LUNG CHANG, MING-HENG HSIEH, WEN-CHING CHENG, PI-KAI LEE, YU-CHEN LIU, FANG-JU CHOU
  • Patent number: 8987166
    Abstract: The preparation of bimetallic gold-silver cerium dioxide-supported catalysts and the process of oxidation of carbon monoxide (CO) in air to remove CO using the gold-silver cerium dioxide-supported catalysts are disclosed. The gold loading is between 0.5 and 5 wt. %. Gold and silver particle sizes are between 1 and 3 nm, and Au/Ag weight ratio is between 1 and 10. Oxidation of CO in air over these catalysts is carried out in a fixed bed reactor to remove CO.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: March 24, 2015
    Assignee: National Central University
    Inventors: Yu-Wen Chen, Wen-Ching Cheng
  • Publication number: 20030165579
    Abstract: An herbal extract of Euphorbia antiquorum is provided. The herbal extract of the invention demonstrates in vitro inhibition of growth of hepatoma cells, colorectal adenocarcinoma cells, monocyte-like lymphoma and leukemia cells. This invention also provides a pharmaceutical composition containing the same and a method for treatments for cancers.
    Type: Application
    Filed: February 27, 2002
    Publication date: September 4, 2003
    Inventors: Chih-Hui Lin, Wen-Ching Cheng