Abstract: A multipurpose flashlight is constructed to include a barrel holding a battery, a lamp head connected to one end of the barrel and holding a lamp bulb, a controller formed of a microprocessor, a PNP transistor and a MOS field effect transistor and adapted to regulate the intensity of light of the lamp bulb installed therein, a selector switch adapted to drive the controller to regulate the intensity of light of the lamp bulb, and a trigger switch adapted to drive the microprocessor to flash the lamp bulb.

Abstract: A fly wheel brake device is provided for use in the load adjustment of a permeation fly wheel of an exercise bicycle and other exercising recovery devices. One end of a rotary handle is connected to a brake cable and the other end thereof is connected to a rotary disk so that the rotary disk is driven by the brake cable. The upper side of a plurality of sector sliding blocks each have attached thereto a convex column positioned along a cambered slot in the rotary disk, the lower side of the sector sliding blocks are each provided with an integral disk and permanent magnets. A plurality of aluminum sheets are provided on the bevelled inner circle of the permeation fly wheel and sustain a gap with the permeation magnets. The rotary handle drives the rotary disk to rotate forward or backward under the operation of the cable, thus causing the sector sliding blocks to slide forward or backward, respectively.

Abstract: A method for fabricating simultaneously bipolar and complementary MOS transistors is disclosed. After a gate oxide layer for the MOS transistors is grown, the gate oxide layer is etched to expose an intrinsic base region on a bipolar transistor well and to reduce thicknesses of opposite portions of base oxide layers that face one another on two sides of the intransic base region. Impurity is implanted into the intrinsic base region so as to form an intrinsic base of the bipolar transistor, the intrinsic base having a base portion between the base oxide layers and a base link portion connected to the base portion and disposed underneath the opposite portions of the base oxide layers. A polysilicon layer is then deposited on the gate oxide layer, and an impurity is implanted into the polysilicon layer and is driven through the polysilicon layer by high temperature treatment to form an emitter region on the surface of the base portion of the intransic base.