Patents by Inventor Wen-Chung Tang
Wen-Chung Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230209709Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, an active element, a driving circuit element, a first connection circuit, a second connection circuit and a conductive connector. The substrate has a first surface and a second surface opposite to the first surface. The active element is disposed on the first surface. The driving circuit element is disposed on the second surface and is overlapped with the active element. The first connection circuit is disposed on the first surface and is connected to the active element. The second connection circuit is disposed on the second surface and is connected to the driving circuit element. The conductive connector penetrates through the substrate and two ends of the conductive connector are electrically connected to the first connection circuit and the second connection circuit, respectively.Type: ApplicationFiled: November 2, 2022Publication date: June 29, 2023Applicant: E Ink Holdings Inc.Inventors: Yi Jiun Wu, Wen-Chung Tang, Yung-Sheng Chang, Cheng-Hao Lee, Yu-Lin Hsu, Kuo-Hsing Cheng
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Patent number: 10763446Abstract: An organic thin film transistor includes a substrate, a source/drain layer that is located on the substrate and has a source region and a drain region, a first buffer layer that is located between the source region and the drain region, a semiconductor layer that is located on the source/drain layer and the first buffer layer, a gate insulating layer, and a gate electrode. The first buffer layer covers at least one portion of the source region and at least one portion of the drain region. The first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate. The gate insulating layer covers the source/drain layer and the semiconductor layer. The gate electrode is located on the gate insulating layer, and a portion of the gate insulating layer is located between the gate electrode and the semiconductor layer.Type: GrantFiled: May 7, 2018Date of Patent: September 1, 2020Assignee: E Ink Holdings Inc.Inventors: Kuan-Yi Lin, Wen-Chung Tang, Po-Wei Chen, Yu-Lin Hsu
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Patent number: 10700297Abstract: An organic thin film transistor includes a drain electrode, a semiconductor layer, a source electrode, a gate insulator, and a gate electrode. A horizontal portion and a vertical portion of the semiconductor layer are respectively located on a top surface and an end surface of the drain electrode, and the drain electrode protrudes from the horizontal portion in a first direction. The source electrode is disposed along a surface of the semiconductor layer. The source electrode has an extending portion that extends in a second direction opposite to the first direction. The gate insulator is disposed along a top surface and two side surfaces of a stacked structure defined by the drain electrode, the semiconductor layer, and the source electrode. The gate electrode is located on the gate insulator, and a portion of the gate insulator is between the stacked structure and the gate electrode.Type: GrantFiled: November 16, 2017Date of Patent: June 30, 2020Assignee: E Ink Holdings Inc.Inventors: Po-Wei Chen, Wen-Chung Tang, Yu-Lin Hsu
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Patent number: 10522597Abstract: A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.Type: GrantFiled: August 23, 2018Date of Patent: December 31, 2019Assignee: E Ink Holdings Inc.Inventors: Kuan-Yi Lin, Yu-Wen Chen, Yu-Chieh Hung, Chun-Yu Lu, Wen-Chung Tang, Po-Wei Chen, Yu-Lin Hsu
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Publication number: 20180366518Abstract: A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.Type: ApplicationFiled: August 23, 2018Publication date: December 20, 2018Inventors: Kuan-Yi LIN, Yu-Wen CHEN, Yu-Chieh HUNG, Chun-Yu LU, Wen-Chung TANG, Po-Wei CHEN, Yu-Lin HSU
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Publication number: 20180331310Abstract: An organic thin film transistor includes a substrate, a source/drain layer that is located on the substrate and has a source region and a drain region, a first buffer layer that is located between the source region and the drain region, a semiconductor layer that is located on the source/drain layer and the first buffer layer, a gate insulating layer, and a gate electrode. The first buffer layer covers at least one portion of the source region and at least one portion of the drain region. The first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate. The gate insulating layer covers the source/drain layer and the semiconductor layer. The gate electrode is located on the gate insulating layer, and a portion of the gate insulating layer is located between the gate electrode and the semiconductor layer.Type: ApplicationFiled: May 7, 2018Publication date: November 15, 2018Inventors: Kuan-Yi LIN, Wen-Chung TANG, Po-Wei CHEN, Yu-Lin HSU
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Patent number: 10103201Abstract: A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.Type: GrantFiled: July 3, 2017Date of Patent: October 16, 2018Assignee: E Ink Holdings Inc.Inventors: Kuan-Yi Lin, Yu-Wen Chen, Yu-Chieh Hung, Chun-Yu Lu, Wen-Chung Tang, Po-Wei Chen, Yu-Lin Hsu
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Publication number: 20180233683Abstract: An organic thin film transistor includes a drain electrode, a semiconductor layer, a source electrode, a gate insulator, and a gate electrode. A horizontal portion and a vertical portion of the semiconductor layer are respectively located on a top surface and an end surface of the drain electrode, and the drain electrode protrudes from the horizontal portion in a first direction. The source electrode is disposed along a surface of the semiconductor layer. The source electrode has an extending portion that extends in a second direction opposite to the first direction. The gate insulator is disposed along a top surface and two side surfaces of a stacked structure defined by the drain electrode, the semiconductor layer, and the source electrode. The gate electrode is located on the gate insulator, and a portion of the gate insulator is between the stacked structure and the gate electrode.Type: ApplicationFiled: November 16, 2017Publication date: August 16, 2018Inventors: Po-Wei CHEN, Wen-Chung TANG, Yu-Lin HSU
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Publication number: 20180012939Abstract: A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.Type: ApplicationFiled: July 3, 2017Publication date: January 11, 2018Inventors: Kuan-Yi LIN, Yu-Wen CHEN, Yu-Chieh HUNG, Chun-Yu LU, Wen-Chung TANG, Po-Wei CHEN, Yu-Lin HSU
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Patent number: 9330846Abstract: A capacitor structure of capacitive touch panel including a first electrode layer, a first material layer, a second material layer and a second electrode layer is provided. The first material layer is disposed on the first electrode layer, and the material of the first material layer is selected from one of a semiconductor material and an insulating material. The second material layer is disposed on the first material layer, and the material of the second material layer is selected from another one of the semiconductor material and the insulating material. The second electrode layer is disposed on the second material layer.Type: GrantFiled: June 18, 2013Date of Patent: May 3, 2016Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Ted-Hong Shinn, Chuang-Chuang Tsai, Wen-Chung Tang, Chih-Hsiang Yang
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Patent number: 9201542Abstract: A light sensitive display apparatus and an operating method thereof are disclosed herein. The light sensitive display apparatus includes a plurality of pixels, and the operating method of the light sensitive display apparatus includes the following steps. In a writing state, a first data voltage and a first gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a first display state. In an erasing state, a second data voltage and a second gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a second display state.Type: GrantFiled: September 14, 2012Date of Patent: December 1, 2015Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Ted-Hong Shinn, Wen-Chung Tang, Chih-Hsiang Yang
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Patent number: 9105730Abstract: A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.Type: GrantFiled: November 21, 2013Date of Patent: August 11, 2015Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Ted-Hong Shinn, Chuang-Chuang Tsai, Chih-Hsiang Yang, Chia-Chun Yeh, Wen-Chung Tang
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Patent number: 9069131Abstract: A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.Type: GrantFiled: May 13, 2011Date of Patent: June 30, 2015Assignee: E INK HOLDINGS INC.Inventors: Fang-An Shu, Ted-Hong Shinn, Yao-Chou Tsai, Wen-Chung Tang
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Patent number: 9035228Abstract: A light sensor including a photo transistor is provided. A gate of the photo transistor receives a gate driving signal. The photo transistor senses a light source based on the gate driving signal to generate a light current signal. The photo transistor includes a metal-oxide active layer. The gate driving signal has a first voltage level during a trap period and has a second voltage level during a read period. The first voltage level is higher than the second voltage level. The gate driving signal of the photo transistor introduces a mechanism to rapidly eliminate excess carriers. Accordingly, the photo transistor has a rapid response while maintaining good light responsibility. Furthermore, a method for driving the foregoing photo transistor is also provided.Type: GrantFiled: October 25, 2012Date of Patent: May 19, 2015Assignee: E Ink Holdings Inc.Inventors: Wei-Tsung Chen, Ted-Hong Shinn, Chuang-Chuang Tsai, Wen-Chung Tang, Chih-Hsiang Yang
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Patent number: 8961255Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.Type: GrantFiled: August 13, 2012Date of Patent: February 24, 2015Assignee: E Ink Holdings Inc.Inventors: Wen-Chung Tang, Fang-An Shu, Yao-Chou Tsai, Ted-Hong Shinn, Ming-Sheng Chiang, Chih-Cheng Wang
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Patent number: 8927983Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.Type: GrantFiled: August 19, 2012Date of Patent: January 6, 2015Assignee: E Ink Holdings Inc.Inventors: Wen-Chung Tang, Fang-An Shu, Yao-Chou Tsai, Ted-Hong Shinn
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Patent number: 8896946Abstract: A color filter suitable for being disposed on a substrate is provided. The color filter includes a plurality of pixel units separately disposed on the substrate so as to define a plurality of blank regions thereon. A color display apparatus applying the color filter is also provided, wherein the color display apparatus includes a driving circuit substrate, the color filter and a display medium layer. The color filter is disposed on the driving circuit substrate. The display medium layer is disposed between the driving circuit substrate and the color filter.Type: GrantFiled: January 17, 2012Date of Patent: November 25, 2014Assignee: E Ink Holdings Inc.Inventors: Yao-Chou Tsai, Fang-An Shu, Wen-Chung Tang, Ted-Hong Shinn
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Patent number: 8854722Abstract: A color electronic paper apparatus includes a display layer, a color resist layer, an anti-ultraviolet layer and a protective sheet. The color resist layer is disposed on the display layer. The anti-ultraviolet layer is disposed on the color resist layer. The protective sheet is disposed on the anti-ultraviolet layer. A manufacturing method of the color electronic paper apparatus and a color electronic paper display are provided herein.Type: GrantFiled: January 29, 2012Date of Patent: October 7, 2014Assignee: E Ink Holdings Inc.Inventors: Ted-Hong Shinn, Fang-An Shu, Yao-Chou Tsai, Wen-Chung Tang
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Patent number: 8767148Abstract: Disclosed herein is a color filter, which includes a first substrate, a patterned color, resist layer, a patterned passivation layer, an adhesive layer and a second substrate. The patterned color resist layer is disposed on the first substrate. The patterned passivation layer is stacked on the patterned color resist layer. The adhesive layer covers the patterned protective layer. The second substrate is disposed on the adhesive layer. A display device having the color filter is disclosed herein as well.Type: GrantFiled: July 26, 2012Date of Patent: July 1, 2014Assignee: E Ink Holdings Inc.Inventors: Ted-Hong Shinn, Fang-An Shu, Wen-Chung Tang
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Publication number: 20140138677Abstract: A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.Type: ApplicationFiled: November 21, 2013Publication date: May 22, 2014Applicant: E Ink Holdings Inc.Inventors: Wei-Tsung CHEN, Ted-Hong SHINN, Chuang-Chuang TSAI, Chih-Hsiang YANG, Chia-Chun YEH, Wen-Chung TANG