Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: The invention provides a power supply including at least one power output port, at least one status alert component, and at least one output port status monitoring module. The status alert component generates at least one visual prompt based on an alert signal. The output port status monitoring module includes at least one temperature sensor adjacent to the power output port, a microcontroller connected to the temperature sensor and sensing an output current from the power output port, and a reset signal generator connected to the microcontroller. The microcontroller comprises at least one port status alert condition that takes a temperature and the output current of the power output port as decision factors. The microcontroller outputs the alert signal to the status alert component when the port status alert condition is met and maintains the status until a reset signal provided by the reset signal generator is received.

Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: Various embodiments of the present disclosure are directed towards an imaging device including a first image sensor element and a second image sensor element respectively comprising a pixel unit disposed within a semiconductor substrate. The first image sensor element is adjacent to the second image sensor element. A first micro-lens overlies the first image sensor element and is laterally shifted from a center of the pixel unit of the first image sensor element by a first lens shift amount. A second micro-lens overlies the second image sensor element and is laterally shifted from a center of the pixel unit of the second image sensor element by a second lens shift amount different from the first lens shift amount.

Abstract: Exfoliated nanoplatelets functionalized with a non-polar moiety, such as an ethylene or propylene derived polymer, are useful for forming composites, films, and polymer blends.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: Embodiments described herein relate to sub-pixel circuits, displays including sub-pixel circuits, and a method of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. Some configurations of the displays described herein, include the sub-pixel circuits and at least one sensor opening adjacent to the overhang structure and an adjacent sub-pixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations displays described herein, include sub-pixel circuits including OLED sub-pixels and a transparent sub-pixel such that a sensor is disposed thereunder. The configurations described herein utilize sensors that are integrated to increase the transmittance of the display while eliminating the need for bezels and reducing dead zones in the display.

Abstract: A resistor structure includes a resistor body; and a first electrode structure disposed at and being in electric contact with a first end of the resistor body, and a second electrode structure disposed at and being in electric contact with a second end opposite to the first end of the resistor body. Each of the first electrode structure and the second electrode structure has at least one conductive protrusion. The at least one conductive protrusion of the first electrode structure and the at least one conductive protrusion of the second electrode structure both serve as voltage-sensing terminals for electric connection to an external voltage measurement device, or both serve as current-sensing terminals for electric connection to a current measurement device.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: A method and apparatus for forming an encapsulation layer on an organic light emitting diode (OLED) patterned substrate are described. A sidewall planarization layer fills voids in a scalloped sidewall of a wall feature on the OLED patterned substrate. The sidewall planarization layer is cured in the same chamber as the deposition of the sidewall planarization layer. A barrier layer is formed on the sidewall planarization layer. The sidewall planarization layer provides a planarized surface for good adhesion of the barrier layer over the sidewall planarization layer which minimizes the possibility of defects to the OLED patterned substrate from moisture of oxygen penetrating the OLED patterned substrate.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: Packaging materials and methods of manufacture are disclosed. The packaging material comprises a substrate surface and film coating selected from the group consisting of an elastomer, a polymer, an inorganic material and combinations thereof. The film coating includes a first layer and a second layer, the first layer deposited on the second layer. The first layer has a formula of SiOxNyCz, where x is in a range from 1.9 to 2.15, y is in a range from 0.01 to 0.08, and z is in a range from 0.10 to 0.40.