Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: The present application relates to a system and a method for producing vinyl chloride. The system comprise a preheat unit, a gas-liquid separating unit, a heat-recovery unit, a heating unit and a thermal pyrolysis unit, and therefore heat energy of the thermal pyrolysis product can be efficiently recovered. Energy cost of the system can be efficiently lowered with the heat-recovery unit and the heating unit, and further prolonging operating cycle of the system.

Abstract: A new process for repairing an attenuated phase-shifting photomask is described. A contact hole pattern is provided on an attenuating phase-shifting photomask. An aerial image is obtained of the contact hole pattern. The critical dimension of the contact hole pattern is predicted from the intensity of the aerial image. Thereafter, the critical dimension is adjusted by forming non-printable optical proximity or scattering bar correction patterns around abnormal defects in the contact hole pattern on the attenuated phase-shifting photomask. The non-printable correction patterns enhance or cancel light intensity to correct the adnormal defects.

Abstract: This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before is step is carried out is thereby improved.

Abstract: A mask and a method of forming a mask having a binary mask pattern in a first region of a transparent mask substrate and a rim type attenuating phase shifting mask pattern in a second region of the same transparent mask substrate. The rim type attenuating phase shifting mask pattern is used to form small contact holes and the binary mask pattern is used to form larger contact holes in an integrated circuit wafer. The use of the rim type attenuating phase shifting mask pattern and the binary mask pattern avoids the problems due to side lobe effect for cases where different size contact holes are required on the same layer in an integrated circuit wafer. The formation of the rim type attenuating phase shifting mask pattern and the binary mask pattern on the same transparent mask substrate increases throughput and decreases cost in the fabrication of integrated circuit wafers.

Abstract: This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before this step is carried out is thereby improved.

Abstract: A new process for fabricating an attenuated phase-shifting photomask is described. A photomask blank is provided comprising a phase-shifting layer overlying a substrate, a chromium layer overlying the phase-shifting layer, and a resist layer overlying the chromium layer. The resist layer of the photomask blank is exposed to electron-beam energy wherein a main pattern area of the photomask blank is exposed to a first dosage of the electron-beam energy and wherein a border area surrounding the main pattern area is not exposed to the electron-beam energy and wherein a secondary pattern area between the main pattern area and the border area is exposed to a second dosage of electron-beam energy wherein the second dosage is lower than the first dosage. The exposed resist layer is developed wherein the resist within the main pattern area is removed to expose the chromium layer. The exposed chromium layer is etched through to expose the underlying phase-shifting layer.