Abstract: A handheld X ray device comprises a camera-like X ray generator body having a zoom ring-like object at a front side of the X ray generator body as an exit of X rays and has a collimator section atop a surface of the zoom ring-like object. The camera-like X ray generator body inside has a voltage boosting circuit, an oscillator circuit, a battery, and a control circuit, and a user interface at a real panel of the camera-like X ray generator body. The glass ball-tube is a cold cathode type X-ray generator with a tungsten filament at a periphery of a cold cathode. The voltage boosting circuit, the oscillator circuit, boosting the voltage of the battery up to a predetermined high voltage under controlled of the control circuit assisting by the user interface.

Abstract: An encapsulated structure of an X ray generator with a cold cathode and method of vacuuming the same are disclosed. The X ray generator has a glass ball-tube having a base, a tungsten filament, a cold cathode, a focus cap, and an anode target inside, associated with a first electrode pin, a second electrode pin, a single-used pin, and anode pin extended out. The tungsten filament located at the periphery of the base has a first wire end connected with the second electrode pin and a second wire end connected with the single-used pin. While vacuuming the glass ball-tube before melting an end to seal, a voltage is exerting on the single use pin to heat the tungsten, and a high voltage is exerting on the anode target to accelerate the hot electrons emitting from the filament to bombard the inside wall of the glass ball-tube and the anode target so as to shorten the vacuuming time and increase the vacuum level.

Abstract: A handheld X ray device comprises a camera-like X ray generator body having a zoom ring-like object at a front side of the X ray generator body as an exit of X rays and has a collimator section atop a surface of the zoom ring-like object. The camera-like X ray generator body inside has a voltage boosting circuit, an oscillator circuit, a battery, and a control circuit, and a user interface at a real panel of the camera-like X ray generator body. The glass ball-tube is a cold cathode type X-ray generator with a tungsten filament at a periphery of a cold cathode. The voltage boosting circuit, the oscillator circuit, boosting the voltage of the battery up to a predetermined high voltage under controlled of the control circuit assisting by the user interface.

Abstract: An encapsulated structure of an X ray generator with a cold cathode and method of vacuuming the same are disclosed. The X ray generator has a glass ball-tube having a base, a tungsten filament, a cold cathode, a focus cap, and an anode target inside, associated with a first electrode pin, a second electrode pin, a single-used pin, and anode pin extended out. The tungsten filament located at the periphery of the base has a first wire end connected with the second electrode pin and a second wire end connected with the single-used pin. While vacuuming the glass ball-tube before melting an end to seal, a voltage is exerting on the single use pin to heat the tungsten, and a high voltage is exerting on the anode target to accelerate the hot electrons emitting from the filament to bombard the inside wall of the glass ball-tube and the anode target so as to shorten the vacuuming time and increase the vacuum level.

Abstract: A projector using glass phosphor as a color mixing element includes: a laser light source capable of producing light; an optical system, the color mixing member, a reflection element and an imaging system disposed on a light transmission path. The optical system includes a color wheel, the light will be converted into light beams of different colors when passing through the color wheel. The color mixing element is located between the laser light source and the optical system and made of glass phosphor, and a glass transition temperature of the glass phosphor being higher than 500° C. The imaging system serves to convert the light beams into an image. The use of the heat-resistant glass phosphor as the color mixing element enables the projector to have a wide color gamut and an adjustable color gamut.

Abstract: An x-ray generation device and a cathode thereof are provided. The x-ray generation device comprises the cathode, a focusing device, an anode target, and a glass container. The cathode comprises a container and an electron beam generator. The container has a base and a side wall surrounding the base, and both of them define a trench. The electron beam generator comprises at least one metal unit, each of the at least one metal unit is chemical-vapor-deposited a carbon layer, and each of the at least one metal unit is disposed on a bottom of the trench. The at least one metal unit is electrically connected to an outer metal unit of the x-ray generation device. The glass container contains the cathode, the focusing device, and the anode target in sequence. Each of the at least one carbon layer faces the anode target. The glass container has a valve for evacuating and a window for emitting an x-ray.

Abstract: An x-ray generation device and a cathode thereof are provided. The x-ray generation device comprises the cathode, a focusing device, an anode target, and a glass container. The cathode comprises a container and an electron beam generator. The container has a base and a side wall surrounding the base, and both of them define a trench. The electron beam generator comprises at least one metal unit, each of the at least one metal unit is chemical-vapor-deposited a carbon layer, and each of the at least one metal unit is disposed on a bottom of the trench. The at least one metal unit is electrically connected to an outer metal unit of the x-ray generation device. The glass container contains the cathode, the focusing device, and the anode target in sequence. Each of the at least one carbon layer faces the anode target. The glass container has a valve for evacuating and a window for emitting an x-ray.

Abstract: A white light emitting diode (LED) is provided, which includes a reflective mirror arranged on the light emitting path of a blue or an ultra violet LED die at an appropriate angle. Phosphors are coated on the reflective mirror, the emitting plane of the LED, or both so that the phosphors are excited by the blue or UV lights emitted by the LED die to produce white lights. The present invention provides a white LED having a long lifetime and a uniform light color by separating the phosphors from the LED die, and by allowing the lights emitted from the LED die to undergo several excitations with the phosphors.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: A white light emitting diode (LED) is provided, which includes a reflective mirror arranged on the light emitting path of a blue or an ultra violet LED die at an appropriate angle. Phosphors are coated on the reflective mirror, the emitting plane of the LED, or both so that the phosphors are excited by the blue or UV lights emitted by the LED die to produce white lights. The present invention provides a white LED having a long lifetime and a uniform light color by separating the phosphors from the LED die, and by allowing the lights emitted from the LED die to undergo several excitations with the phosphors.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: A umbrella includes a shank having a tip and a handle opposite to the tip, a bracket having first ends pivotally connected to the shank and second ends pivotally connected to skeletons each having a first end pivotally connected to the shank and second end divergently extending out from the shank, a canopy on top of the skeletons and the bracket and having the tip extending out of the canopy, a first illuminator received in the handle to light the handle and a second illuminator received in the shank to light the tip.

Abstract: A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: A method for manufacturing GaN-based light-emitting diode (LED) is provides with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a mutli-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for said p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for said n-type ohmic contact layer; and finally, forming pads on both said first ohmic contact electrode and said second ohmic contact electrode.

Abstract: A GaN semiconductor stack layer is formed on top of a substrate for manufacturing a light emitting diode. The GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on the P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact. Finally, a bump pad is formed on the first ohmic contact electrode and the second ohmic contact electrode, respectively.

Abstract: The present invention provides a structure and a manufacturing method of GaN light emitting diodes. First, a substrate is provided. Then, a GaN semiconductor stack layer is formed on top of the substrate. The said GaN semiconductor stack layer includes, from the bottom up, an N-type GaN contact layer, a light emitting stack layer and a P-type contact layer. The next step is to form a digital transparent layer on said P-type GaN contact layer, then use dry etching technique to etch downward through the digital transparent layer, the P-type GaN contact layer, the light emitting layer, the N-type GaN contact layer, and form an N-metal forming area within the N-type GaN contact layer. The next step is to form a first ohmic contact electrode on the P-type contact layer to serve as P-type ohmic contact, and a second ohmic contact electrode on the N-metal forming area to serve as N-type ohmic contact.

Abstract: A white LED device includes a member, a plurality of LEDs, fixed on the member, the LEDS further comprising blue GaN LEDs, a reflector, in parabolic shape, to encase thed member and the plurality of LEDs, yellow phosphor, coated on the surface of the reflector facing the LEDs, and a supporting component, for connecting the member and the reflector in order to connect the LEDs, the member and the reflector together. The main feature of the present invention includes that the LEDs emit blue light when positively biased. The blue light triggers yellow phosphor to generate a yellow light, and the blue light mixed with the yellow light to become a white light. The white light is reflected by the reflector to project onto target objects.

Abstract: A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.

Abstract: The present invention relates to a light-emitting diode structure for increasing the equivalent conductivity of the light-emitting diode and does not necessary to change the thickness of the epitaxy. The structure of the present invention comprises inserting a higher electrical n-type conductivity layer in the epitaxial structure of the light-emitting diode. Furthermore, a tunneling layer made of higher density p-type and n-type materials is inserted in between. Under voltage bias, the current will run through electrode and across the low resistance layer by means of bias/tunneling effect, and finally reach the easily conductive n-type GaN layer, then the current is moving along the p/n junction and arrive at the bottom of the emitting layer. Then after a breakdown/tunneling effect, the current enter into p-type GaN layer and then into the emitting layer for recombination and radiation.