Patents by Inventor Wen-Hsiang Lin
Wen-Hsiang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8957597Abstract: A luminaire is provided, which includes a first light source for providing an illumination light and a second light source passing through at least one image pattern for providing a patterned light. The first light source and the second light source are coupled to a driving circuit and covered by a lamp cover. The driving circuit is used to selectively drive at least one of the first light source and the second light source for providing the illumination light and/or the patterned light. A user may turn on or switch different patterns by touching a casing of the luminaire.Type: GrantFiled: July 5, 2011Date of Patent: February 17, 2015Assignees: Lite-On Electronics (Guangzhou) Limited, Lite-On Technology CorporationInventors: Wen-Hsiang Lin, Po-Wei Li, Chih-Chiang Kao
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Publication number: 20150024533Abstract: A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).Type: ApplicationFiled: October 7, 2014Publication date: January 22, 2015Inventors: Yi-Hsien CHANG, Chun-Ren CHENG, Yi-Shao LIU, Allen Timothy CHANG, Ching-Ray CHEN, Yeh-Tseng LI, Wen-Hsiang LIN
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Patent number: 8890439Abstract: A light-emitting device includes multiple light-emitting diode units sequentially connected and coupled to a first power source, a switching circuit connected to the light-emitting diode units, a second power source, and a control module. Power provided by the first power source is larger than power provided by the second power source. The second power source is connected to the light-emitting diode units through the switching circuit, which is controlled by the control module to facilitate the delivery of the power of the first power source or the second power source to the light-emitting diode units. When the first power source serves to deliver the power thereof to the light-emitting diode units, the light-emitting diode units may be in a serial conduction. When the second power source serves to deliver the power thereof to the light-emitting diode units, the light-emitting diode units may be in a parallel conduction.Type: GrantFiled: January 8, 2013Date of Patent: November 18, 2014Assignees: Lite-On Electronics (Guangzhou) Limited, Lite-On Technology CorporationInventors: Wen-Hsiang Lin, Meng-Sung Chou
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Patent number: 8883021Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.Type: GrantFiled: May 7, 2012Date of Patent: November 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Yi-Shao Liu, Allen Timothy Chang, Ching-Ray Chen, Yeh-Tseng Li, Wen-Hsiang Lin
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Patent number: 8770774Abstract: A ventilation fan with lights includes an exhaust fan, a lid, and an illumination apparatus. The lid covers an entrance of the exhaust fan. The lid has plural exhaust gratings and an opening. The exhaust gratings are arranged at least adjacent to opposite sides of the opening. The illumination apparatus is embedded in the opening of the lid. The illumination apparatus includes a lamp housing, a lamp plate, plural light emitting diodes (LEDs), a lampshade, and plural scattering microstructures. LEDs are arranged on the lamp plate. The lampshade covers the lamp housing. The lampshade and the lamp housing cooperate to define a lamp chamber therebetween. The lamp plate and the LEDs are disposed in the lamp chamber. The scattering microstructures are disposed on an inner surface of the lampshade facing the lamp chamber.Type: GrantFiled: January 16, 2012Date of Patent: July 8, 2014Assignee: Delta Electronics, Inc.Inventors: Long-Sing Ye, Yueh-Shan Lin, Wen-Hsiang Lin, Te-Chung Liu
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Publication number: 20140124734Abstract: A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure.Type: ApplicationFiled: January 13, 2014Publication date: May 8, 2014Applicant: EPISTAR CORPORATIONInventors: Wen Hsiang LIN, Chang-Hua HSIEH
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Publication number: 20140017840Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: September 17, 2013Publication date: January 16, 2014Applicant: EPISTAR CORPORATIONInventors: Chen OU, Wen-Hsiang LIN, Shih-Kuo LAI
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Patent number: 8562738Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: February 25, 2013Date of Patent: October 22, 2013Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20130256259Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.Type: ApplicationFiled: May 7, 2012Publication date: October 3, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Hsien CHANG, Chun-Ren CHENG, Yi-Shao LIU, Allen Timothy CHANG, Ching-Ray CHEN, Yeh-Tseng LI, Wen-Hsiang LIN
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Patent number: 8536565Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: March 11, 2011Date of Patent: September 17, 2013Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20130088855Abstract: A ventilation fan with lights includes an exhaust fan, a lid, and an illumination apparatus. The lid covers an entrance of the exhaust fan. The lid has plural exhaust gratings and an opening. The exhaust gratings are arranged at least adjacent to opposite sides of the opening. The illumination apparatus is embedded in the opening of the lid. The illumination apparatus includes a lamp housing, a lamp plate, plural light emitting diodes (LEDs), a lampshade, and plural scattering microstructures. LEDs are arranged on the lamp plate. The lampshade covers the lamp housing. The lampshade and the lamp housing cooperate to define a lamp chamber therebetween. The lamp plate and the LEDs are disposed in the lamp chamber. The scattering microstructures are disposed on an inner surface of the lampshade facing the lamp chamber.Type: ApplicationFiled: January 16, 2012Publication date: April 11, 2013Applicant: DELTA ELECTRONICS, INC.Inventors: Long-Sing YE, Yueh-Shan LIN, Wen-Hsiang LIN, Te-Chung LIU
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Publication number: 20120280635Abstract: An alternating current (AC) light-emitting device includes a waveform generating unit and an AC light-emitting unit. The waveform generating unit is configured to receive an AC electrical signal and to generate a drive signal by adjusting one of: voltage amplitude of the AC electrical signal during one of positive and negative half-cycles of the AC electrical signal, and waveform level of the AC electrical signal. The AC light-emitting unit includes a first light-emitting component and a second light-emitting component, and the second light-emitting component emits a different wavelength light compared to that emitted by the first light-emitting component. The first and second light-emitting components are electrically coupled to the waveform generating unit to receive the drive signal, and emit light according to the drive signal.Type: ApplicationFiled: March 30, 2012Publication date: November 8, 2012Applicants: LITE-ON TECHNOLOGY CORP., SILITEK ELECTRONIC (GUANGZHOU) CO., LTD.Inventors: YU-KANG LU, WEN-HSIANG LIN, SHIH-CHIANG YEN
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Publication number: 20120081005Abstract: A luminaire is provided, which includes a first light source for providing an illumination light and a second light source passing through at least one image pattern for providing a patterned light. The first light source and the second light source are coupled to a driving circuit and covered by a lamp cover. The driving circuit is used to selectively drive at least one of the first light source and the second light source for providing the illumination light and/or the patterned light. A user may turn on or switch different patterns by touching a casing of the luminaire.Type: ApplicationFiled: July 5, 2011Publication date: April 5, 2012Applicants: LITE-ON TECHNOLOGY CORPORATION, SILITEK ELECTRONIC (GUANGZHOU) CO., LTD.Inventors: WEN-HSIANG LIN, PO-WEI LI, CHIH-CHIANG KAO
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Publication number: 20110156001Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: March 11, 2011Publication date: June 30, 2011Inventors: Chen OU, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: 7928424Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: November 13, 2008Date of Patent: April 19, 2011Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20090127581Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: November 13, 2008Publication date: May 21, 2009Inventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: D645588Type: GrantFiled: February 22, 2011Date of Patent: September 20, 2011Assignees: Silitek Electric (Guangzhou) Co., Ltd., Lite-On Technology Corp.Inventors: Po-Wei Li, Wen-Hsiang Lin, Shih-Chang Hsu, Yuan-Yuan Lee
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Patent number: D646806Type: GrantFiled: February 22, 2011Date of Patent: October 11, 2011Assignees: Silitek Electronic (Guangzhou) Co., Ltd., Lite-On Technology Corp.Inventors: Po-Wei Li, Wen-Hsiang Lin, Shih-Chang Hsu, Yuan-Yuan Lee
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Patent number: D681794Type: GrantFiled: September 30, 2011Date of Patent: May 7, 2013Assignee: Delta Electronics, Inc.Inventors: Wen-Hsiang Lin, Long-Sing Ye, Yueh-Shan Lin, Te-Chung Liu
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Patent number: D705417Type: GrantFiled: February 11, 2013Date of Patent: May 20, 2014Assignee: Delta Electronics, Inc.Inventors: Wen-Hsiang Lin, Long-Sing Ye, Yueh-Shan Lin