Abstract: A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.

Abstract: An electronic device is provided. The electronic device includes a redistribution structure, an electronic unit and a first conductive pad. The first conductive pad is disposed between the redistribution structure and the electronic unit. The electronic unit is electrically connected to the redistribution structure through the first conductive pad. The first conductive pad has a first coefficient of thermal expansion and a first Young's modulus. The first coefficient of thermal expansion and the first Young's modulus conform to the following formula: 0.7×(0.0069E2?1.1498E+59.661)?CTE?1.3×(0.0069E2?1.1498E+59.661), wherein CTE is the first coefficient of thermal expansion, and E is the first Young's modulus in the formula.

Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: A supporting apparatus of a chair includes a frame, two fabrics, two liners and a cushion. The frame is formed with two grooves extending along the frame. The depth of each of the internal and external grooves is larger than the width of the same. Each of the fabrics includes a wrapper extending around a contact portion and wrapping one of the liners. The wrapper of each of the fabrics and the corresponding liner are fitted in one of the grooves so that the contact portion of the fabric is stressed. The cushion is sandwiched between the contact portions of the fabrics.

Abstract: A slurry for manufacturing a graphene sheet combining graphite flake structure includes a solvent, a graphite nanoplatelet material and a graphene material. The graphite nanoplatelet material includes a plurality of graphite nanoplatelets. The graphene material comprising a plurality of graphenes. The graphite nanoplatelet material and the graphene material is mixed in the solvent, a weight percentage of the graphite nanoplatelet material is between 0.1% and 10%, and the content of the graphene material is between 1% and 80% of the graphite nanoplatelet material.

Abstract: A graphene sheet combining graphite flake structure includes a graphite nanoplatelet material and a graphene material. The graphene material is mixed in the graphite nanoplatelet material, and the content of the graphene material is between 1% and 80% of the graphite nanoplatelet material. A slurry for manufacturing the graphene sheet combining graphite flake structure and a manufacturing method for the graphene sheet combining graphite flake structure are also disclosed.

Abstract: A graphene sheet combining graphite flake structure includes a graphite nanoplatelet material and a graphene material. The graphene material is mixed in the graphite nanoplatelet material, and the content of the graphene material is between 1% and 80% of the graphite nanoplatelet material. A slurry for manufacturing the graphene sheet combining graphite flake structure and a manufacturing method for the graphene sheet combining graphite flake structure are also disclosed.