Abstract: An optical interference display plate at least comprises a light-incidence electrode and a light-reflection electrode. The light-incidence electrode at least comprises an absorption layer and a dielectric layer. A material of the absorption layer does not comprises metallic material.

Abstract: A reflector structure in a multi-domain liquid crystal display comprises an active matrix device structure having regions of various height levels, a diffusing layer, and a structure of multi-domain reflective layer. The diffusing layer is formed above the active matrix device structure with multiple extruded bumps of various film thickness and various heights and shapes. The reflector structure has various reflective angles and reflective effects to improve the quality of LCD panel. It can be used in the reflective layer of a reflective or semi-reflective TN, STN, TFT, or TFD. The reflector fabrication process uses conventional process for a metal or an insulation layer on a TFT substrate to form multiple domains within a pixel area. After forming the cell structure of the multi-domain reflective layer, liquid crystal cells form multiple domains within a pixel area.

Abstract: An optical-interference type display panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple first conductive optical film stacks, supporting layers and multiple second conductive optical film stacks are formed. The substrate further has a plurality of connecting pads consisting of a transparent conductive film of the first conductive optical film stacks. Since the transparent conductive film is made of indium tin oxide, these connecting pads have the excellent anti-oxidation ability at their surface.

Abstract: An optical-interference type reflective panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple supporting layers are firstly formed. Then, a plurality of first conductive optical film stacks, spacing layers and multiple second conductive optical film stacks are sequentially formed on the substrate. Finally, once the spacing layers are removed, optical-interference regulators are formed. Since said supporting layers forming step is prior to the first conductive optical film stacks, a precise back-side exposing step is not necessary so that the making procedure of the panel is simplified.

Abstract: A manufacturing method for optical interference type panel is provided. A patterned supporting layer is formed on a transparent substrate, and then a first electrode layer and an optical film are formed sequentially on the supporting layer and the transparent substrate. A sacrificial material layer is formed on the optical layer, and then, a backside exposure process is performed by using the supporting layer as a mask to pattern the sacrificial material layer. A portion of the patterned sacrificial material layer is removed to expose the optical film above the supporting layer to form a sacrificial layer, and then a second electrode layer is formed on the sacrificial layer between the adjacent supporting layers and portion of the optical film. Afterwards, the sacrificial layer is removed.

Abstract: An optical interference color display comprising a transparent substrate, an inner-front optical diffusion layer, a plurality of first electrodes, a patterned support layer, a plurality of optical films and a plurality of second electrodes is provided. The inner-front optical diffusion layer is on the transparent substrate and the first electrodes are on the inner-front optical diffusion layer. The patterned support layer is on the inner-front optical diffusion layer between the first electrodes. The optical film is on the first electrodes and the second electrodes are positioned over the respective first electrodes. The second electrodes are supported through the patterned support layer. Furthermore, there is an air gap between the second electrodes and their respective first electrodes.

Abstract: An optical interference color display is provided. The optical interference color display comprises a color filtering substrate, a patterned support layer, a plurality of first electrodes, a plurality of optical films and a plurality of second electrodes. The patterned support layer and the first electrodes are positioned on the color filtering substrate with the patterned support layer between the first electrodes. The optical films are positioned on the first electrodes. The second electrodes is positioned over the first electrodes and supported through the patterned support layer such that an air gap with identical thickness is produce between every pair of second electrode and first electrode. Using the color filtering substrate to show color images, air gap between the first electrodes and the second electrodes are identical and hence simplifies the manufacturing process.

Abstract: Disclosed is a metal contact structure and method for a thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure.

Abstract: A manufacturing method for optical interference type panel is provided. A patterned supporting layer is formed on a transparent substrate, and then a first electrode layer and an optical film are formed sequentially on the supporting layer and the transparent substrate. A sacrificial material layer is formed on the optical layer, and then, a backside exposure process is performed by using the supporting layer as a mask to pattern the sacrificial material layer. A portion of the patterned sacrificial material layer is removed to expose the optical film above the supporting layer to form a sacrificial layer, and then a second electrode layer is formed on the sacrificial layer between the adjacent supporting layers and portion of the optical film. Afterwards, the sacrificial layer is removed.

Abstract: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

Abstract: The method for fabricating reflector plate for a reflective liquid crystal display and the device is disclosed. The present invention includes the formation of a protection layer over the glass substrate having thin film transistors and a layer of transparent electrodes on top, followed by the formation of a layer of undulating resin over the protection layer. If the reflector plate to be produced is a semi-transmissive type, a light-transmitting region is created over the protection layer. Since the protection layer is created in advance of the undulating resin outgrowth, the present method can effectively prevent reflection from the exposure stage during the lithography process, thus the problem of abnormal pattern marks occurring on the reflective surface can be avoided, and the exposure time and the production yield are enhanced.

Abstract: A reflector structure in a multi-domain liquid crystal display comprises an active matrix device structure having regions of various height levels, a diffusing layer, and a structure of multi-domain reflective layer. The diffusing layer is formed above the active matrix device structure with multiple extruded bumps of various film thickness and various heights and shapes. The reflector structure has various reflective angles and reflective effects to improve the quality of LCD panel. It can be used in the reflective layer of a reflective or semi-reflective TN, STN, TFT, or TFD. The reflector fabrication process uses conventional process for a metal or an insulation layer on a TFT substrate to form multiple domains within a pixel area. After forming the cell structure of the multi-domain reflective layer, liquid crystal cells form multiple domains within a pixel area.

Abstract: Disclosed is a method for forming a bonding pad in a TFT array process for a reflective LCD and the bonding pad formed by the method, in which an ITO is formed on the first or second metal layer directly during the fabrication of the TFT structure for the reflective LCD to thereby obtain the bonding pad directly after etching the contact window for the scan bonding pad or data bonding pad, and thus an ITO mask process for bonding pad is saved and the LCD process is simplified.

Abstract: A reflector structure in a multi-domain liquid crystal display comprises an active matrix device structure having regions of various height levels, a diffusing layer, and a structure of multi-domain reflective layer. The diffusing layer is formed above the active matrix device structure with multiple extruded bumps of various film thickness and various heights and shapes. The reflector structure has various reflective angles and reflective effects to improve the quality of LCD panel. It can be used in the reflective layer of a reflective or semi-reflective TN, STN, TFT, or TFD. The reflector fabrication process uses conventional process for a metal or an insulation layer on a TFT substrate to form multiple domains within a pixel area. After forming the cell structure of the multi-domain reflective layer, liquid crystal cells form multiple domains within a pixel area.

Abstract: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device with a convex structure and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing an insulation substrate; forming a first conductor layer on the insulation substrate; removing portions of the first conductor layer to define a first conductor structure and a first convex structure, wherein the first convex structure is posited on an area of pixel; forming an insulation layer and a semiconductor layer sequentially on the first conductor structure and the insulation substrate having the first conductor layer; removing portions of the semiconductor layer to define a semiconductor structure; forming a second conductor layer on the semiconductor structure; and removing portions of the second conductor layer to define a second conductor structure.

Abstract: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device including plural conductive beads and a manufacturing method thereof are provided. The manufacturing method includes the steps of (a) providing an insulated substrate, (b) forming a TFT structure and a transparent electrode structure on the insulated substrate wherein the transparent electrode structure is connected to a source/drain region of the TFT structure, and (c) forming a thin film structure including plural conductive beads on the transparent electrode structure.

Abstract: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

Abstract: Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.

Abstract: Disclosed is a metal contact structure and method for thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure.