Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Abstract: A cold deformable and unmemory plastic object is disclosed, which can be prepared from one single plastic material by drawing a semi-crystalline or crystalline thermoplastic intermediate at a temperature lower than its melting point to an extent so that said intermediate loses its elasticity substantially. The unmemory plastic object of the present invention may be in the form of a bendable and twistable wire or tape for tying, a collapsible and foldable hollow tube for packing, or a thin rod for supporting, such as a stem of an artificial flower.