Abstract: The present disclosure is relates to a TPU ball structure and a manufacturing method thereof. The TPU ball structure includes a ball bladder layer, a yarn layer and a surface layer. The ball bladder layer is made of TPU material. The yarn layer is made of TPU material, and the yarn layer is disposed to cover the ball bladder layer. The surface layer is made of TPU material, and the surface layer is disposed to cover the yarn layer. The above layers of the TPU ball structure are made of TPU material to satisfy a requirement for environmental protection, and are recyclable. There is no need to use adhesive to adhere the above layers of the TPU ball structure. Therefore, the peeling strength between the layers of the TPU ball structure can be increased so that the whole peeling strength of the TPU ball structure can be increased.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: A process control method is provided for controlling a tool which processes a deposition process on a plurality of wafers for a process time. The process control method comprises receiving a quantity of the wafers and calculating a deposition compensation time necessary for the deposition process performed on the wafers by the tool according to the quantity of the wafers and a deposition loading effect coefficient corresponding to the deposition process. The deposition loading effect coefficient is retrieved from a database according to a process program of the deposition process. According to the deposition compensation time, the process time is adjusted to be an adjusted process time. The deposition process is performed on the wafers for the adjusted process time by the tool.

Abstract: A horizontal-type silicon-nitride furnace (HOSINF) having two tubes is provided. The HOSINF includes an outer tube and an inner tube. One end of the outer tube is coupled to a pump. The other end of the outer tube can be well sealed by a door through a flange. The inner tube is located inside the outer tube. The inner tube has a closed end and an opened end, in which the opened end is near to the door, and the closed end is near to the pump. The inner tube includes a first gas inlet and a second gas inlet. Desired reaction gases are flushed into the inner tube from the first inlet and the second inlet. The inner tube surrounds a paddle carrying several wafers, on which a silicon nitride layer is to be formed. The paddle is mounted on the door. A heater is located on a side periphery of the outer tube.

Abstract: The invention disclosed an efficient apparatus for solving the problem of unstable growth rate of oxide occurred when the procedure of wet oxidation is processed first and immediately followed by a procedure of dry oxidation. The invention involves in implementing as many insulating sleeves as required for wrapping around inlet pipes of a horizontal driven field oxidation tube to prevent water vapor from remaining in the inlet pipes so as to stabilize the growth rate of oxide.