Patents by Inventor Wen-Kuang Tsao
Wen-Kuang Tsao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190115539Abstract: An organic light emitting diode includes a substrate, a bottom electrode, a first dielectric layer, a second dielectric layer, an organic light emitting layer, and a top electrode. The bottom electrode is disposed on the substrate. The first dielectric layer is disposed on the bottom electrode and has a first opening. The second dielectric layer is disposed on the first dielectric layer and has a second opening. The second opening is aligned with the first opening and exposes a portion of an upper surface of the bottom electrode. The organic light emitting layer is disposed in the first opening and the second opening. The organic light emitting layer contact the potion of the upper surface of the bottom electrode. The top electrode covers the organic light emitting layer.Type: ApplicationFiled: November 29, 2017Publication date: April 18, 2019Inventors: Wen-Kuang TSAO, Shin-Chuan CHIANG, Der-Chun WU, Yen-Yu HUANG
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Patent number: 7855383Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.Type: GrantFiled: November 7, 2007Date of Patent: December 21, 2010Assignee: ChungHwa Picture Tubes, Ltd.Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang
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Patent number: 7807519Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.Type: GrantFiled: June 25, 2008Date of Patent: October 5, 2010Assignee: Chunghwa Picture Tubes, LtdInventors: Wen-Kuang Tsao, Hung-I Hsu
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Patent number: 7800109Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source electrode and the drain electrode are disposed over the semiconductor layer.Type: GrantFiled: April 22, 2005Date of Patent: September 21, 2010Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Wen-Kuang Tsao, Hung-I Hsu, Hsiang-Hsien Chung, Min-Huang Chen
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Publication number: 20090020414Abstract: A method of eliminating electrostatic charges generated from friction between a carrier and a substrate is provided. A substrate having a front surface and a back surface is provided. A transparent conductive layer is formed on the back surface by sputtering or evaporation process, wherein the electrostatic charges accumulated on the carrier are eliminated through the transparent conductive layer when the anti-static substrate is in contact with the carrier.Type: ApplicationFiled: September 21, 2008Publication date: January 22, 2009Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Wen-Kuang Tsao, Chien-Yu Chen
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Publication number: 20080261356Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.Type: ApplicationFiled: June 25, 2008Publication date: October 23, 2008Applicant: CHUNGHWA PICTURE TUBES, LTD.Inventors: Wen-Kuang Tsao, Hung-I Hsu
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Patent number: 7408190Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.Type: GrantFiled: July 5, 2005Date of Patent: August 5, 2008Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Wen-Kuang Tsao, Hung-I Hsu
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Publication number: 20080121521Abstract: A plasma sputtering target assembly and a method therefor are provided. The sputtering target assembly includes a target, a bonding layer having a plurality of particles and having a first side bonded with the target and second side, and a backplate bonded with the second side of the bonding layer. The particles are being provided when the backplate is heated. Alternatively, a plurality of protrusions is formed on the backplate and the bonding layer is larger than or equal to the protrusions in altitude. Since the bonding layer has a composition and sputter yield of the part different from that of the target, in sputtering, the bonding layer is made exposed to plasma and thus an exceptional discharging phenomenon is caused when the target is struck through. By detecting the phenomenon, whether the target is almost over-sputtered may be forecasted and the backplate may be prevented from being struck through.Type: ApplicationFiled: August 15, 2006Publication date: May 29, 2008Inventors: Hsiang-Hsien Chung, Wen-Kuang Tsao, Hung-Yi Hsu, Chien-Yu Chen
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Publication number: 20080061327Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.Type: ApplicationFiled: November 7, 2007Publication date: March 13, 2008Applicant: Chunghwa Picture Tubes., Ltd.Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang
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Publication number: 20070048530Abstract: An anti-electrostatic discharge substrate adapted to eliminate electrostatic charges generated from friction between a carrier and the anti-electrostatic discharge substrate is provided. The anti-electrostatic discharge substrate includes a substrate having a front surface and a back surface; and a conductive layer on the back surface, wherein the electrostatic charges accumulated on the carrier are eliminated through the conductive layer when the substrate is in contact with the carrier.Type: ApplicationFiled: August 29, 2005Publication date: March 1, 2007Inventors: Wen-Kuang Tsao, Chien-Yu Chen
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Publication number: 20070007522Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.Type: ApplicationFiled: July 5, 2005Publication date: January 11, 2007Inventors: Wen-Kuang Tsao, Hung-I Hsu
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Publication number: 20060237724Abstract: A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a soruce/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one layer of aluminum-yttrium alloy nitride. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.Type: ApplicationFiled: April 22, 2005Publication date: October 26, 2006Inventors: Wen-Kuang Tsao, Hung-I Hsu, Hsiang-Hsien Chung, Min-Huang Chen
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Publication number: 20060197089Abstract: A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.Type: ApplicationFiled: March 3, 2005Publication date: September 7, 2006Applicant: Chunghwa Picture Tubes., Ltd.Inventors: Ching-Yeh Kuo, Tsung-Chi Cheng, Yu-Chou Lee, Yea-Chung Shih, Wen-Kuang Tsao, Hsiang-Hsien Chung, Hung-Yi Hsu, Jui-Chung Chang
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Patent number: 6921698Abstract: A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.Type: GrantFiled: September 29, 2003Date of Patent: July 26, 2005Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Yu-Chou Lee, Wen-Kuang Tsao
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Publication number: 20050006645Abstract: A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.Type: ApplicationFiled: September 29, 2003Publication date: January 13, 2005Inventors: Yu-Chou Lee, Wen-Kuang Tsao