Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: The present invention is a process for oxidation of a liquid which contains cyanide and soluble metal ions, using an oxygen-containing gas. Art example of such a liquid is the liquid waste produced during metal treatment processes. The disclosed process not only eliminates the cyanide completely, but also converts the metal dissolved in the liquid into granular metal oxides which can be readily recovered.