Abstract: A gate structure includes a substrate divided into an N-type transistor region and a P-type transistor region. An interlayer dielectric covers the substrate. A first trench is embedded in the interlayer dielectric within the N-type transistor region. A first gate electrode having a bullet-shaped profile is disposed in the first trench. A gate dielectric contacts the first trench. An N-type work function layer is disposed between the gate dielectric layer and the first gate electrode. A second trench is embedded in the interlayer dielectric within the P-type transistor region. A second gate electrode having a first mushroom-shaped profile is disposed in the second trench. The gate dielectric layer contacts the second trench. The N-type work function layer is disposed between the gate dielectric layer and the second gate electrode. A first P-type work function layer is disposed between the gate dielectric layer and the N-type work function layer.

Abstract: A flash storage device comprises: a memory module, for storing data; a control unit, electrically connected to the memory module, for accessing the data in the memory module; and a detecting unit, electrically connected to the control unit, for passing a temperature detecting result to the control unit, and the control unit determining whether a data protection operation is activated according to the temperature detecting result.

Abstract: A method of wear leveling applied to a non-volatile memory is provided. The method comprises steps of: categorizing all blocks within the non-volatile memory to a first group with erased blocks having higher history numbers, a second group with erased blocks having lower history numbers, or a third group with blocks not either assigned to the first group or the second group; selecting a first block which contains a clod data from the third group; selecting a second block from the first group; copying the cold data from the first block into the second block and updating the history number of the second block; and erasing the first block.

Abstract: A flash storage device comprises: a memory module, for storing data; a control unit, electrically connected to the memory module, for accessing the data in the memory module; and a detecting unit, electrically connected to the control unit, for passing a temperature detecting result to the control unit, and the control unit determining whether a data protection operation is activated according to the temperature detecting result.

Abstract: The present invention provides a method of managing an alarm. According to the method of the invention, step (a) is firstly performed to control the alarm to ring at a predetermined time and generate a first question. Secondly, step (b) is performed to receive a first answer inputted by a user. Thirdly, step (c) is performed to judge whether the first answer matches a first default answer. If the first answer matches the first default answer, step (d) is finally performed to control the alarm to stop ringing.